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ADS6129IRGZ25

Texas Instruments

ADS6129IRGZ25 by Texas Instruments

The Texas Instruments ADS6129IRGZ25 is a 12-bit ADC with 0.061% EL, operating at 250 MHz sample rate. It features a 48-terminal chip carrier package suitable for industrial applications. With a temperature range of -40 to 85 °C, it offers high precision in analog-to-digital conversion for various electronic systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,644 parts In-Stock

1+ parts

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3,644

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Vyrian

USA . 2,321 parts In-Stock

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2,321

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Distributors (Availability)

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Parana Technologies

USA . 769 parts In-Stock

1+ parts

$4.951

100+ parts

-

1k+ parts

$5.491

10k+ parts

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769

$4.951

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$5.491

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DigiPath Technology Company

USA . 1,601 parts In-Stock

1+ parts

$5.452

100+ parts

$5.016

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-

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1,601

$5.452

$5.016

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ChromeModa Solutions

Germany . 1,763 parts In-Stock

1+ parts

$5.563

100+ parts

$4.562

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1,763

$5.563

$4.562

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IDEA Electronic Components Group

UK . 170 parts In-Stock

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$5.563

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$5.007

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170

$5.563

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$5.007

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One Stop Electronics

USA . 337 parts In-Stock

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$8.000

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337

$8.000

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AZTECH Wire

Italy . 561 parts In-Stock

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$8.368

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561

$8.368

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Corphita

USA . 4,746 parts In-Stock

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Microchip USA

USA . 2,580 parts In-Stock

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2,580

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Northwest PG Solutions

USA . 872 parts In-Stock

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872

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Native Components

USA . 527 parts In-Stock

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527

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Overview

Elevate your analog-to-digital conversion experience with the ADS6129IRGZ25 by Texas Instruments. Crafted with precision and quality, this converter offers unparalleled accuracy and reliability for a wide range of applications. From industrial automation to medical devices, the ADS6129IRGZ25 delivers exceptional performance, efficiency, and ease of use. Trust in Texas Instruments' expertise and innovation to elevate your projects to new heights. Experience the value and benefits of this cutting-edge technology today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the ADC, ensuring reliable performance over time.

No. of Bits: 12

Higher number of bits allows for higher resolution and more precise conversion of analog signals to digital data.

Power Supplies (V): 1.8,3.3

Offers flexibility in power supply options, making it compatible with a variety of systems and applications.

Maximum Operating Temperature: 85 °C

Wide operating temperature range allows the ADC to function reliably in harsh environmental conditions.

Sample Rate: 250 MHz

High sample rate enables fast and accurate conversion of analog signals, making it suitable for time-sensitive applications.

Technical Specifications

Analog-to-Digital Converters ADS6129IRGZ25 attributes and parameters. Explore more Analog-to-Digital Converters devices from Texas Instruments

Converter Specifications

No. of Analog In Channels:

1

No. of Functions:

1

No. of Bits:

12

Sub-Category:

Analog to Digital Converters

Output Bit Code:

Offset Binary, 2's Complement Binary

Output Format:

Serial, Parallel, Word

Maximum Linearity Error (EL):

0.061 %

Sample Rate:

250 MHz

Hold Mode:

Sample

Electrical Specifications

Power Supplies:

1.8,3.3 V

Minimum Analog Input Voltage:

0 mV

Maximum Analog Input Voltage:

2 V

Nominal Supply Voltage:

3.3 V

Operating Conditions

Moisture Sensitivity Level (MSL):

3

Minimum Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Temperature Grade:

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Time At Peak Reflow Temperature:

30 s

Form Factor

Terminal Position:

Quad

No. of Terminals:

48

Terminal Form:

Terminal Pitch:

0.02 in (0.5 mm)

Surface Mount:

Yes

Width:

0.276 in (7 mm)

Length:

0.276 in (7 mm)

Maximum Seated Height:

0.039 in (1 mm)

Packaging

Package Body Material:

Plastic/Epoxy

Package Style:

Chip Carrier, Heat Sink/Slug, Very Thin Profile

Package Shape:

Package Equivalence Code:

LCC48,.27SQ,20

Package Code:

Standards and Codes

JESD-30 Code:

S-PQCC-N48

Qualified:

No

JESD-609 Code:

e4

Trade Compliance

ADS6129IRGZ25 Converters trade compliance attributes, and parameters.

ECCN

3A991.C.2

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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