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ADS5481IRGCR

Texas Instruments

ADS5481IRGCR by Texas Instruments

Texas Instruments ADS5481IRGCR is a 16-bit ADC with 80 MHz sample rate, 0.0153% linearity error, and 3V max analog input voltage. Ideal for industrial applications requiring high-speed data conversion in a compact chip carrier package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,557 parts In-Stock

1+ parts

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8,557

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Digiode

USA . 980 parts In-Stock

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980

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 430 parts In-Stock

1+ parts

$18.060

100+ parts

-

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430

$18.060

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Parana Technologies

USA . 1,354 parts In-Stock

1+ parts

$20.759

100+ parts

-

1k+ parts

$20.904

10k+ parts

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1,354

$20.759

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$20.904

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DigiPath Technology Company

USA . 944 parts In-Stock

1+ parts

$22.858

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944

$22.858

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IDEA Electronic Components Group

UK . 1,992 parts In-Stock

1+ parts

$23.325

100+ parts

$22.159

1k+ parts

$20.992

10k+ parts

-

1,992

$23.325

$22.159

$20.992

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ChromeModa Solutions

Germany . 1,444 parts In-Stock

1+ parts

$23.325

100+ parts

$19.126

1k+ parts

-

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1,444

$23.325

$19.126

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One Stop Electronics

USA . 1,059 parts In-Stock

1+ parts

$31.000

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1,059

$31.000

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Northwest PG Solutions

USA . 990 parts In-Stock

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990

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Native Components

USA . 725 parts In-Stock

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725

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Corphita

USA . 390 parts In-Stock

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390

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Overview

Experience unparalleled precision and performance with the ADS5481IRGCR from Texas Instruments. As a leader in analog-to-digital converters, Texas Instruments delivers cutting-edge technology that meets the highest industry standards. The ADS5481IRGCR is perfect for a wide range of applications, providing accurate and reliable results every time. Say goodbye to compromises and hello to superior quality with this top-of-the-line product. Unlock new possibilities and maximize your efficiency with the ADS5481IRGCR today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring long-lasting performance.

No. of Bits: 16

High resolution for accurate conversion of analog signals to digital data.

Maximum Linearity Error (EL): 0.0153 %

Ensures precision in the conversion process with minimal error.

Power Supplies (V): 3.3,5

Offers flexibility in power requirements to accommodate different system configurations.

Maximum Operating Temperature: 85 °C

Can operate in harsh environments with high temperatures, making it suitable for industrial applications.

Technology: BIPOLAR

Utilizes bipolar technology for high-speed and accurate signal processing.

Sample Rate: 80 MHz

High sample rate allows for fast and real-time data conversion.

Output Format: PARALLEL, WORD

Provides versatile output format options for seamless integration with different systems.

Technical Specifications

Analog-to-Digital Converters ADS5481IRGCR attributes and parameters. Explore more Analog-to-Digital Converters devices from Texas Instruments

Converter Specifications

No. of Analog In Channels:

1

No. of Functions:

1

No. of Bits:

16

Sub-Category:

Analog to Digital Converters

Output Bit Code:

Offset Binary

Output Format:

Parallel, Word

Maximum Linearity Error (EL):

0.0153 %

Sample Rate:

80 MHz

Hold Mode:

Track

Electrical Specifications

Power Supplies:

3.3,5 V

Minimum Analog Input Voltage:

-3 V

Maximum Analog Input Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Maximum Supply Current:

330 mA

Operating Conditions

Moisture Sensitivity Level (MSL):

3

Minimum Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Temperature Grade:

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Time At Peak Reflow Temperature:

30 s

Form Factor

Terminal Position:

Quad

No. of Terminals:

64

Terminal Form:

Terminal Pitch:

0.02 in (0.5 mm)

Surface Mount:

Yes

Width:

0.354 in (9 mm)

Length:

0.354 in (9 mm)

Maximum Seated Height:

0.039 in (1 mm)

Packaging

Package Body Material:

Plastic/Epoxy

Package Style:

Chip Carrier, Heat Sink/Slug, Very Thin Profile

Package Shape:

Package Equivalence Code:

LCC64,.35SQ,20

Package Code:

Standards and Codes

JESD-30 Code:

S-PQCC-N64

Qualified:

No

JESD-609 Code:

e4

Trade Compliance

ADS5481IRGCR Converters trade compliance attributes, and parameters.

ECCN

3A001.A.5.A.5

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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