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ADS1203IRGTRG4

Texas Instruments

ADS1203IRGTRG4 by Texas Instruments

ADS1203IRGTRG4 by Texas Instruments is a 16-bit ADC with 0.0061% linearity error, operating b/w -40 to 125 °C. It's used in automotive applications due to its CMOS technology, serial output format, and low supply current of 10.5 mA.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,252 parts In-Stock

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Vyrian

USA . 3,588 parts In-Stock

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Parana Technologies

USA . 532 parts In-Stock

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$8.896

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$9.572

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532

$8.896

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ChromeModa Solutions

Germany . 4,503 parts In-Stock

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$9.995

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$8.196

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IDEA Electronic Components Group

UK . 1,078 parts In-Stock

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$9.995

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$9.495

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$8.996

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AZTECH Wire

Italy . 763 parts In-Stock

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$15.522

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One Stop Electronics

USA . 1,340 parts In-Stock

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$29.000

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Corphita

USA . 3,055 parts In-Stock

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Microchip USA

USA . 928 parts In-Stock

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DigiPath Technology Company

USA . 760 parts In-Stock

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$9.011

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Northwest PG Solutions

USA . 505 parts In-Stock

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Native Components

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Overview

Discover the precision and reliability of the ADS1203IRGTRG4 by Texas Instruments, a leading manufacturer of high-quality Analog-to-Digital Converters. Ideal for automotive applications, this cutting-edge product offers customers unmatched value with its 16-bit resolution, minimal linearity error, and efficient CMOS technology. With a compact square package design and serial output format, this ADC delivers accurate results in a wide temperature range. Trust Texas Instruments to provide you with exceptional performance and superior quality for all your analog-to-digital conversion needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the ADC lightweight and durable, ideal for applications where weight and reliability are important factors.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, saving time and effort during the manufacturing process.

No. of Bits: 16

With a high number of bits, this ADC offers high resolution and accuracy in converting analog signals to digital, making it suitable for precision measurement applications.

Maximum Linearity Error (EL): 0.0061 %

The low linearity error ensures that the digital output closely matches the input analog signal, resulting in accurate and reliable conversion.

Package Style (Meter): CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

The combination of chip carrier, heat sink/slug, and very thin profile package styles provides efficient heat dissipation and space-saving design for compact electronic devices.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature range makes this ADC suitable for automotive and industrial applications where temperature fluctuations are common.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this ADC energy-efficient and reliable in noisy environments.

Maximum Analog Input Voltage: 0.25 V

The high maximum analog input voltage allows for versatile input signal compatibility, making this ADC suitable for a wide range of applications.

Nominal Supply Voltage: 5 V

The 5V nominal supply voltage is a common and stable power source, ensuring consistent performance and compatibility with standard electronic systems.

Output Format: SERIAL

The serial output format simplifies data transmission and integration with digital systems, making it easy to interface this ADC with microcontrollers and other devices.

Technical Specifications

Analog-to-Digital Converters ADS1203IRGTRG4 attributes and parameters. Explore more Analog-to-Digital Converters devices from Texas Instruments

Converter Specifications

No. of Analog In Channels:

1

No. of Functions:

1

No. of Bits:

16

Output Bit Code:

Binary

Output Format:

Serial

Maximum Linearity Error (EL):

0.0061 %

Electrical Specifications

Minimum Analog Input Voltage:

-250 mV

Maximum Analog Input Voltage:

250 mV

Nominal Supply Voltage:

5 V

Maximum Supply Current:

10.5 mA

Operating Conditions

Minimum Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Temperature Grade:

Form Factor

Terminal Position:

Quad

No. of Terminals:

16

Terminal Form:

Terminal Pitch:

0.02 in (0.5 mm)

Surface Mount:

Yes

Width:

0.118 in (3 mm)

Length:

0.118 in (3 mm)

Maximum Seated Height:

0.039 in (1 mm)

Packaging

Package Body Material:

Plastic/Epoxy

Package Style:

Chip Carrier, Heat Sink/Slug, Very Thin Profile

Package Shape:

Package Equivalence Code:

LCC16,.12SQ,20

Package Code:

Standards and Codes

JESD-30 Code:

S-PQCC-N20

Trade Compliance

ADS1203IRGTRG4 Converters trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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