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8550401FA

Texas Instruments

8550401FA by Texas Instruments

Texas Instruments 8550401FA is an 8-bit Decoder & Driver with a propagation delay of 45ns at 5V. It features a MIL-STD-883 screening level and operates in temperatures ranging from -55 to 125°C. Ideal for military-grade applications requiring fast signal processing and high reliability.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,707 parts In-Stock

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Digiode

USA . 4,828 parts In-Stock

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Resion

USA . 67 parts In-Stock

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Native Components

USA . 318 parts In-Stock

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$0.811

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318

$0.811

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Northwest PG Solutions

USA . 449 parts In-Stock

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$0.892

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449

$0.892

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AZTECH Wire

Italy . 865 parts In-Stock

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$18.841

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$18.841

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Parana Technologies

USA . 491 parts In-Stock

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$24.536

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$25.201

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491

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DigiPath Technology Company

USA . 1,341 parts In-Stock

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$27.018

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$27.018

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ChromeModa Solutions

Germany . 1,717 parts In-Stock

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$27.569

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$22.607

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IDEA Electronic Components Group

UK . 583 parts In-Stock

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$27.569

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$26.191

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$24.812

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583

$27.569

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One Stop Electronics

USA . 593 parts In-Stock

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$45.000

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Microchip USA

USA . 11,832 parts In-Stock

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Corphita

USA . 1,754 parts In-Stock

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Overview

Elevate your electronics with the 8550401FA by Texas Instruments. Crafted with precision and reliability, this high-quality Decoder & Drivers module offers unparalleled performance for a wide range of applications. Enjoy seamless integration and enhanced functionality with its advanced features, while benefiting from the durability and efficiency that only Texas Instruments can deliver. Elevate your projects to new heights with the 8550401FA - where innovation meets excellence.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

This material provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Propagation Delay at Nominal Supply: 45 ns

Fast propagation delay ensures quick response times, making this decoder & driver suitable for time-sensitive applications.

Load Capacitance: 50 pF

Suitable for driving capacitive loads, ensuring compatibility with various types of circuits and components.

Maximum Operating Temperature: 125 °C

Capable of operating in high-temperature environments, making it suitable for industrial or military applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this decoder & driver energy-efficient and reliable.

Technical Specifications

Decoder & Drivers 8550401FA attributes and parameters. Explore more Decoder & Drivers devices from Texas Instruments

Specs

Additional Features:

TWO ACTIVE-LOW AND ONE ACTIVE-HIGH ENABLE INPUTS

Family:

HCT

Input Conditioning:

STANDARD

JESD-30 Code:

R-GDFP-F16

JESD-609 Code:

e0

Length:

10.16 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

5.2 Amp

No. of Bits:

8

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Polarity:

INVERTED

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DFP

Package Equivalence Code:

FL16,.3

Package Shape:

Package Style (Meter):

FLATPACK

Packing Method:

TUBE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Maximum Power Supply Current (ICC):

.16 mA

Propagation Delay At Nominal Supply:

45 ns

Propagation Delay (tpd):

54 ns

Qualification:

Qualified

Screening Level:

MIL-STD-883

Maximum Seated Height:

2.03 mm

Sub-Category:

Decoder/Driver

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

6.73 mm

Trade Compliance

8550401FA Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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