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74LVC2G132DCURE4

Texas Instruments

74LVC2G132DCURE4 by Texas Instruments

74LVC2G132DCURE4 by Texas Instruments is a CMOS Logic Gate with 2 functions and inputs, featuring a propagation delay of 6 ns at 1.8V. Ideal for automotive applications, it operates b/w -40 to 125°C with a supply voltage range of 1.65-5.5V, making it suitable for various electronic systems requiring fast signal processing.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,822 parts In-Stock

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Digiode

USA . 2,434 parts In-Stock

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AZTECH Wire

Italy . 725 parts In-Stock

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$13.831

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725

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Parana Technologies

USA . 1,772 parts In-Stock

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$17.543

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$17.735

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DigiPath Technology Company

USA . 678 parts In-Stock

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$19.317

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$17.771

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678

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ChromeModa Solutions

Germany . 5,046 parts In-Stock

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$19.711

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$16.163

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IDEA Electronic Components Group

UK . 1,256 parts In-Stock

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$19.711

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$18.725

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$17.740

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One Stop Electronics

USA . 922 parts In-Stock

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$20.000

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Component Stockers USA

USA . 780 parts In-Stock

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$99.990

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Microchip USA

USA . 1,878 parts In-Stock

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Northwest PG Solutions

USA . 780 parts In-Stock

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Corphita

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Native Components

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Overview

Elevate your logic gate solutions with the 74LVC2G132DCURE4 from Texas Instruments. With a reputation for excellence in semiconductor manufacturing, Texas Instruments delivers a high-quality product designed to meet your needs. Ideal for automotive applications, this logic gate offers fast propagation delays and low power consumption, ensuring efficient performance. Trust in Texas Instruments to provide reliable solutions for your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ensuring longevity and ease of handling.

Propagation Delay At Nominal Supply: 6 ns

Low propagation delay ensures fast signal processing, making this product suitable for applications requiring quick response times.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and effort during production.

No. of Functions: 2

Having multiple functions in a single device saves space on the PCB and simplifies the overall circuit design.

No. of Inputs: 2

Having 2 inputs allows for more versatile logic operations and greater flexibility in circuit configurations.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a low supply voltage of 1.8V can help reduce power consumption and extend battery life in portable devices.

Load Capacitance (CL): 50 pF

The specified load capacitance ensures stable performance and reliable operation in various circuit scenarios.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this product is suitable for use in automotive and industrial applications where temperature may vary.

Schmitt Trigger: YES

The inclusion of a Schmitt trigger provides hysteresis and noise immunity, improving the signal integrity and reliability of the logic gates.

Technical Specifications

Logic Gates 74LVC2G132DCURE4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G8

Length:

2.3 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

No. of Functions:

2

No. of Inputs:

2

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

6 ns

Propagation Delay (tpd):

16 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

.9 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

2 mm

Trade Compliance

74LVC2G132DCURE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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