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74LVC1G139DCUTE4

Texas Instruments

74LVC1G139DCUTE4 by Texas Instruments

74LVC1G139DCUTE4 by Texas Instruments is a CMOS Decoder & Driver with 5.9ns Propagation Delay, 3-STATE Output, and 24A Max I (ol). It operates at -40 to 85°C, suitable for industrial applications requiring fast signal processing in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,915 parts In-Stock

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Digiode

USA . 3,022 parts In-Stock

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AZTECH Wire

Italy . 758 parts In-Stock

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$10.437

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Parana Technologies

USA . 2,220 parts In-Stock

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$10.580

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$11.080

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ChromeModa Solutions

Germany . 4,232 parts In-Stock

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$11.888

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$9.748

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$11.888

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IDEA Electronic Components Group

UK . 597 parts In-Stock

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$11.888

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$11.294

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$10.699

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597

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One Stop Electronics

USA . 1,511 parts In-Stock

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$37.000

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Corphita

USA . 2,367 parts In-Stock

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Northwest PG Solutions

USA . 1,878 parts In-Stock

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DigiPath Technology Company

USA . 1,712 parts In-Stock

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Native Components

USA . 600 parts In-Stock

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Microchip USA

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Overview

Unlock the power of precision with the 74LVC1G139DCUTE4 by Texas Instruments. Known for their top-notch quality and reliability, Texas Instruments brings you a cutting-edge Decoder & Drivers component that is perfect for a wide range of applications. With a nominal supply voltage of 1.8V and a maximum operating temperature of 85°C, this product offers unrivaled performance and efficiency. Experience seamless functionality and unmatched value with the 74LVC1G139DCUTE4, designed to meet all your decoding and driving needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package lightweight and durable, making it suitable for applications where weight and durability are important factors.

Propagation Delay At Nominal Supply: 5.9 ns

The low propagation delay ensures fast signal processing, which is crucial for high-speed applications where quick response times are required.

Surface Mount: YES

The ability to be surface mounted makes installation easier and more efficient, saving time and effort during assembly.

Nominal Supply Voltage / Vsup (V): 1.8

The low supply voltage requirement helps in reducing power consumption, making it an energy-efficient option for electronic devices.

Output Characteristics: 3-STATE

The 3-state output allows for high impedance when disabled, providing flexibility in the signal flow and enabling compatibility with various logic configurations.

Technical Specifications

Decoder & Drivers 74LVC1G139DCUTE4 attributes and parameters. Explore more Decoder & Drivers devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

Input Conditioning:

STANDARD

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

2.3 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Output Polarity:

INVERTED

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

5.9 ns

Propagation Delay (tpd):

16.7 ns

Qualification:

Not Qualified

Maximum Seated Height:

.9 mm

Sub-Category:

Decoder/Drivers

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

2 mm

Trade Compliance

74LVC1G139DCUTE4 Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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