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74ACT11004PWRE4

Texas Instruments

74ACT11004PWRE4 by Texas Instruments

74ACT11004PWRE4 by Texas Instruments is a logic gate with 6 functions, featuring a propagation delay of 9.7 ns at 5V supply. This CMOS technology device operates in industrial temperature range (-40 to 85 °C) and has a load capacitance of 50 pF. It is commonly used in applications requiring fast signal processing and low power consumption.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,681 parts In-Stock

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Digiode

USA . 3,111 parts In-Stock

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One Stop Electronics

USA . 909 parts In-Stock

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$6.000

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909

$6.000

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Parana Technologies

USA . 1,482 parts In-Stock

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$13.166

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$13.671

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$13.671

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DigiPath Technology Company

USA . 205 parts In-Stock

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$14.497

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$13.337

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205

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ChromeModa Solutions

Germany . 6,702 parts In-Stock

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$14.793

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$12.130

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IDEA Electronic Components Group

UK . 1,557 parts In-Stock

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$14.793

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$14.053

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$13.314

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1,557

$14.793

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$13.314

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AZTECH Wire

Italy . 259 parts In-Stock

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$18.818

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$18.818

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Native Components

USA . 347 parts In-Stock

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$33.125

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$31.800

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$31.800

Northwest PG Solutions

USA . 881 parts In-Stock

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$36.438

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QUARKTWIN TECHNOLOGY LTD

USA . 11,658 parts In-Stock

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Corphita

USA . 3,063 parts In-Stock

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Microchip USA

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Overview

Elevate your electronic projects with the 74ACT11004PWRE4 by Texas Instruments. Crafted with precision and expertise, this logic gate boasts reliable performance and durability. Perfect for a wide range of applications, this product offers seamless integration and efficiency. Experience enhanced functionality and seamless operation with the high-quality design of Texas Instruments. Upgrade your projects with ease and confidence using the 74ACT11004PWRE4.

Feature Benefit Bullets

Propagation Delay at Nominal Supply: 9.7 ns

Low propagation delay ensures fast processing speed, making this product suitable for high-speed applications.

No. of Functions: 6

Having multiple functions in one device can save space and reduce complexity in circuit design.

Nominal Supply Voltage: 5 V

Standard voltage supply makes it compatible with many existing systems and easy to interface with other components.

Maximum I (ol): 24 Amp

High output current capability allows driving of multiple loads or components without external amplification.

Maximum Operating Temperature: 85 °C

Wide operating temperature range enables use in various environmental conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the efficiency and reliability of the product.

Technical Specifications

Logic Gates 74ACT11004PWRE4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

ACT

JESD-30 Code:

R-PDSO-G20

Length:

6.5 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

No. of Functions:

6

No. of Inputs:

1

No. of Terminals:

20

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP20,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Propagation Delay At Nominal Supply:

9.7 ns

Propagation Delay (tpd):

9.7 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.2 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

4.4 mm

Trade Compliance

74ACT11004PWRE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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