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5962-89503012A

Texas Instruments

5962-89503012A by Texas Instruments

Texas Instruments' 5962-89503012A is a MIL-STD-883 compliant CMOS chip carrier with 20 terminals. It operates b/w -55 to 125 °C, with Vsup ranging from 2V to 15V. This analog waveform generator has a max output frequency of 1.2 GHz, making it ideal for military applications requiring high-frequency signal generation.

Median Price

$23.449

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

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Verical

USA . 50 parts In-Stock

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$24.938

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$22.550

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$22.550

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Rochester

USA . 14 parts In-Stock

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$21.960

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$19.650

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$18.500

14

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$19.650

$18.500

Distributors (In-Stock)

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NAC Semi

USA . 23 parts In-Stock

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$18.990

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Digiode

USA . 3,792 parts In-Stock

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Freelance Electronics

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VNN

France . 3,278 parts In-Stock

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Vyrian

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Resion

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Odi Ramu Company

Canada . 42 parts In-Stock

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Nova Conductors

Japan . 37 parts In-Stock

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Astute Electronics Inc

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Mil-Aero Solutions, Inc.

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AZTECH Wire

Italy . 701 parts In-Stock

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$8.479

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$8.479

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Corohmni

South Africa . 75 parts In-Stock

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$9.885

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Parana Technologies

USA . 1,494 parts In-Stock

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$16.914

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$17.151

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$16.914

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Ampacity Inc.

Singapore . 46 parts In-Stock

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$18.040

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DigiPath Technology Company

USA . 811 parts In-Stock

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$18.625

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ChromeModa Solutions

Germany . 6,651 parts In-Stock

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$19.005

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$15.584

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IDEA Electronic Components Group

UK . 1,672 parts In-Stock

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$18.055

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$17.104

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Corphita

USA . 2,438 parts In-Stock

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$19.098

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Advanced Electronics

New Zealand . 1,500 parts In-Stock

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$25.368

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$25.114

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$24.100

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Continental Prestige Electronics

USA . 5,398 parts In-Stock

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Argo Parts USA

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Microchip USA

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Aranea Global

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Perfect Parts

USA . 15 parts In-Stock

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Overview

Experience unparalleled performance and precision with the Texas Instruments 5962-89503012A Analog Waveform Generation chip carrier. Crafted with high-quality materials and stringent MIL-STD-883 screening, this versatile component offers a wide range of applications with a maximum output frequency of 1.2 GHz. From pulse to rectangular waveforms, this military-grade device delivers exceptional reliability and functionality. Elevate your projects with the cutting-edge technology and superior design of Texas Instruments.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The use of ceramic and metal-sealed cofired material ensures durability and reliability in harsh environmental conditions, making this product suitable for military applications.

Maximum Output Frequency: 1.2 GHz

The high maximum output frequency allows for generating waveform signals at a fast rate, making this product ideal for applications requiring high-speed signal generation.

Nominal Supply Voltage (Vsup): 5 V

The 5V supply voltage makes this product compatible with standard electronic systems, ensuring easy integration and operation.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this product can withstand elevated temperatures, making it suitable for rugged industrial environments.

Technology: CMOS

The use of CMOS technology ensures low power consumption and high noise immunity, making this product energy-efficient and reliable in signal generation.

Technical Specifications

Analog Waveform Generation 5962-89503012A attributes and parameters. Explore more Analog Waveform Generation devices from Texas Instruments

Specs

Additional Features:

IT CAN ALSO OPERATE AT 15 V NOMINAL SUPPLY

Other IC type:

JESD-30 Code:

S-CQCC-N20

JESD-609 Code:

e0

Length:

8.89 mm

No. of Functions:

1

No. of Terminals:

20

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Frequency:

1.2 GHz

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

LCC20,.35SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Power Supplies (V):

5/15

Qualification:

Qualified

Screening Level:

MIL-STD-883

Maximum Seated Height:

2.03 mm

Sub-Category:

Analog Waveform Generation Functions

Maximum Supply Current (Isup):

.7 mA

Maximum Supply Voltage (Vsup):

15 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage (Vsup):

5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Width (mm):

8.89 mm

Trade Compliance

5962-89503012A Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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