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2N3838

Texas Instruments

2N3838 by Texas Instruments

2N3838 by Texas Instruments is a Small Signal BJT with NPN and PNP polarity, ideal for switching applications. It features 2 separate elements in a flatpack package with 6 terminals. With a max voltage of 40V, max current of 0.6A, and fT of 200MHz, it offers fast turn-on/off times for efficient performance.

Median Price

$36.000

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 10 parts In-Stock

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$36.000

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10

$36.000

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Vyrian

USA . 3,125 parts In-Stock

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3,125

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Digiode

USA . 2,435 parts In-Stock

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2,435

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Microfarads

USA . 10 parts In-Stock

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10

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First Choice Components Inc.

USA . 7 parts In-Stock

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7

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Sunrise Surplus Inc.

USA . 5 parts In-Stock

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M&R Communications

USA . 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,369 parts In-Stock

1+ parts

$0.694

100+ parts

-

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$1.733

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-

1,369

$0.694

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$1.733

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DigiPath Technology Company

USA . 1,396 parts In-Stock

1+ parts

$0.764

100+ parts

$0.703

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1,396

$0.764

$0.703

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ChromeModa Solutions

Germany . 5,995 parts In-Stock

1+ parts

$0.780

100+ parts

$0.640

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5,995

$0.780

$0.640

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IDEA Electronic Components Group

UK . 1,272 parts In-Stock

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$0.780

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$0.702

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$0.780

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$0.702

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Northwest PG Solutions

USA . 703 parts In-Stock

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$3.575

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703

$3.575

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AZTECH Wire

Italy . 494 parts In-Stock

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$16.869

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494

$16.869

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One Stop Electronics

USA . 1,523 parts In-Stock

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$60.050

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1,523

$60.050

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Microchip USA

USA . 4,459 parts In-Stock

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$115.416

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4,459

$115.416

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Supply Digital

USA . 2,477 parts In-Stock

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2,477

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Corphita

USA . 2,464 parts In-Stock

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Fulton Briggs Corp.

USA . 2,184 parts In-Stock

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Native Components

USA . 303 parts In-Stock

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$3.152

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303

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Perfect Parts

USA . 16 parts In-Stock

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16

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Overview

Elevate your electronic projects with the high-quality 2N3838 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers reliable Small Signal Bipolar Junction Transistors (BJT) like the 2N3838, perfect for switching applications. With its NPN and PNP polarity options and separate dual-element configuration, this transistor offers versatility and efficiency. Whether you're a hobbyist or a professional, the 2N3838's superior performance, low turn on/off times, and maximum collector-emitter voltage of 40V make it an essential component for your next project. Experience the value and benefits of the 2N3838 and take your creations to the next level!

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides excellent thermal conductivity and heat dissipation, making the transistor more reliable and durable in high temperature environments.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP types allows for greater flexibility in circuit design and compatibility with different applications.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast turn-on and turn-off times, making it suitable for high-speed operations.

Maximum Collector-Emitter Voltage: 40 V

With a high maximum voltage rating, this transistor can withstand higher voltage levels without breakdown, ensuring reliable performance in various circuits.

Nominal Transition Frequency (fT): 200 MHz

The high transition frequency allows for efficient amplification and signal processing capabilities, making this transistor ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N3838 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

50

JESD-30 Code:

R-MDFP-F6

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

METAL

Package Shape:

RECTANGULAR

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

340 ns

Maximum Turn On Time (ton):

50 ns

Trade Compliance

2N3838 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-350-2215, 5961003502215

NIIN

003502215

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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