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2N3807

Texas Instruments

2N3807 by Texas Instruments

2N3807 by Texas Instruments is a PNP BJT with 2 elements, ideal for amplifier applications. It has a max power dissipation of 0.5W, hFE of 300, and VCE of 60V. With a transition frequency of 100MHz and operating temp up to 175°C, it's suitable for various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,265 parts In-Stock

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6,265

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Digiode

USA . 3,827 parts In-Stock

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3,827

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Anansix

USA . 1,422 parts In-Stock

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1,422

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Bristol Electronics

USA . 254 parts In-Stock

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254

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DigiKey Marketplace

USA . 100 parts In-Stock

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100

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PUI

USA . 50 parts In-Stock

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50

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DF Sales Co.

USA . 46 parts In-Stock

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46

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DF Sales Co.

USA . 46 parts In-Stock

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46

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ECAB

Sweden . 15 parts In-Stock

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15

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Manoshevitz Elec. Sales

Israel . 4 parts In-Stock

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4

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Resion

USA . 4 parts In-Stock

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4

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R&J Components

USA . 1 parts In-Stock

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1

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Native Components

USA . 518 parts In-Stock

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$0.839

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518

$0.839

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Northwest PG Solutions

USA . 376 parts In-Stock

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$0.923

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376

$0.923

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Parana Technologies

USA . 40 parts In-Stock

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$1.558

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$2.204

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40

$1.558

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$2.204

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DigiPath Technology Company

USA . 1,028 parts In-Stock

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$1.715

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$1.578

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1,028

$1.715

$1.578

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ChromeModa Solutions

Germany . 1,499 parts In-Stock

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$1.750

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$1.435

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$1.750

$1.435

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IDEA Electronic Components Group

UK . 370 parts In-Stock

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$1.750

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$1.575

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370

$1.750

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$1.575

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AZTECH Wire

Italy . 669 parts In-Stock

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$10.195

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669

$10.195

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One Stop Electronics

USA . 681 parts In-Stock

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$30.050

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681

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Microchip USA

USA . 5,380 parts In-Stock

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5,380

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Corphita

USA . 4,203 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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2,780

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Supply Digital

USA . 1,689 parts In-Stock

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1,689

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RTC Component Inc.

USA . 1 parts In-Stock

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1

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Overview

Enhance your amplifier projects with the reliable 2N3807 PNP bipolar junction transistor from Texas Instruments. Crafted with high-quality materials and precision engineering, this small signal BJT offers exceptional performance and durability. Ideal for various applications, including amplifiers, this transistor provides seamless integration and efficient operation. Trust in Texas Instruments' reputation for excellence and elevate your projects with the 2N3807's superior quality and unmatched value.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides good heat dissipation, increasing the overall reliability and durability of the transistor.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits and this specific polarity allows for easy integration into various amplifier applications.

Configuration: SEPARATE, 2 ELEMENTS

Having separate elements allows for more flexibility in circuit design and enables the transistor to handle higher power levels efficiently.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Package Shape: ROUND

Round package shape provides a compact design that is easy to mount and integrate into various electronic devices.

No. of Terminals: 6

Having 6 terminals allows for greater connectivity options and flexibility in circuit designs.

Minimum DC Current Gain (hFE): 300

High DC current gain ensures greater amplification capabilities and better overall performance of the transistor.

Maximum Collector-Emitter Voltage: 60 V

High maximum collector-emitter voltage rating allows for handling higher voltage levels, increasing the versatility of the transistor.

Maximum Collector Current (IC): 0.05 A

Capable of handling up to 0.05 Amps of collector current, making it suitable for low to medium power applications.

Nominal Transition Frequency (fT): 100 MHz

High nominal transition frequency ensures fast switching speeds, making it suitable for high-frequency applications such as RF amplifiers.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N3807 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Additional Features:

LOW NOISE

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

300

JEDEC-95 Code:

TO-78

JESD-30 Code:

O-MBCY-W6

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N3807 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-477-7374, 5961004777374

NIIN

004777374

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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