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2N3806

Texas Instruments

2N3806 by Texas Instruments

2N3806 by Texas Instruments is a PNP BJT with 2 elements, hFE of 150, and fT of 100 MHz. Ideal for amplifier applications, it has a max power dissipation of 0.5W, max collector-emitter voltage of 60V, and operates up to 175°C.

Median Price

$23.496

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 350 parts In-Stock

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$23.496

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$20.785

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$19.267

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350

$23.496

$20.785

$19.267

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Digiode

USA . 5,608 parts In-Stock

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Vyrian

USA . 2,074 parts In-Stock

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Anansix

USA . 474 parts In-Stock

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474

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PUI

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DigiKey Marketplace

USA . 100 parts In-Stock

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Electronics Depot

USA . 45 parts In-Stock

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45

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Electronic Expediters

USA . 40 parts In-Stock

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R&J Components

USA . 7 parts In-Stock

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Semi Source

USA . 5 parts In-Stock

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ECAB

Sweden . 2 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 812 parts In-Stock

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$0.224

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$0.215

812

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$0.215

Northwest PG Solutions

USA . 1,282 parts In-Stock

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$0.247

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$0.218

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Parana Technologies

USA . 221 parts In-Stock

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$0.877

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$1.818

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221

$0.877

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$1.818

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DigiPath Technology Company

USA . 1,881 parts In-Stock

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$0.965

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$0.888

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1,881

$0.965

$0.888

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ChromeModa Solutions

Germany . 2,156 parts In-Stock

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$0.985

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$0.808

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IDEA Electronic Components Group

UK . 110 parts In-Stock

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$0.985

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$0.886

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110

$0.985

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$0.886

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AZTECH Wire

Italy . 735 parts In-Stock

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$15.327

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$15.327

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Microchip USA

USA . 9,710 parts In-Stock

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$29.868

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One Stop Electronics

USA . 1,589 parts In-Stock

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$32.050

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$32.050

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QUARKTWIN TECHNOLOGY LTD

USA . 19,701 parts In-Stock

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Corphita

USA . 4,747 parts In-Stock

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Supply Digital

USA . 2,523 parts In-Stock

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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RTC Component Inc.

USA . 7 parts In-Stock

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Overview

Unlock the power of innovation with the Texas Instruments 2N3806 Small Signal Bipolar Junction Transistor. Crafted with precision and expertise, this PNP transistor boasts a round package shape and separate configuration for optimal performance in amplifier applications. With a maximum operating temperature of 175°C and a minimum DC current gain of 150, this transistor is designed to deliver top-notch quality and reliability. Trust Texas Instruments to provide you with cutting-edge technology that exceeds your expectations. Elevate your projects with the 2N3806 and experience the difference for yourself.

Feature Benefit Bullets

Package Body Material: METAL

Metal packages offer better heat dissipation, leading to improved performance and reliability.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits and allow for easy integration into existing designs.

Configuration: SEPARATE, 2 ELEMENTS

Having 2 separate elements allows for more flexibility in circuit design and applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Package Shape: ROUND

Round packages are compact and space-saving, ideal for applications where size is a consideration.

Maximum Power Dissipation (Abs): 0.5 W

With a high power dissipation rating, this transistor can handle moderate power levels, increasing overall reliability.

Minimum DC Current Gain (hFE): 150

A high DC current gain allows for better amplification and signal processing capabilities.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without performance degradation.

Maximum Collector-Emitter Voltage: 60 V

The high collector-emitter voltage rating offers versatility in electrical designs and applications.

Maximum Collector Current (IC): 0.05 A

A moderate collector current allows for handling of various current levels in different circuit configurations.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency ensures fast switching speeds, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N3806 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Additional Features:

LOW NOISE

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

150

JEDEC-95 Code:

TO-78

JESD-30 Code:

O-MBCY-W6

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N3806 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-104-8612, 5961001048612, 5961-99-653-9899, 5961996539899

NIIN

001048612, 996539899

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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