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1N4533

Texas Instruments

1N4533 by Texas Instruments

1N4533 by Texas Instruments is a RECTIFIER DIODE with 0.55V VF, 40V VRRM, and 0.002us reverse recovery time. Ideal for applications requiring low forward voltage drop and fast reverse recovery time in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Electronic Expediters

USA . 101,100 parts In-Stock

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Vyrian

USA . 8,516 parts In-Stock

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Digiode

USA . 1,537 parts In-Stock

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Distributors (Availability)

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One Stop Electronics

USA . 494 parts In-Stock

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$0.010

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Parana Technologies

USA . 444 parts In-Stock

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$0.160

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$1.501

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444

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DigiPath Technology Company

USA . 2,261 parts In-Stock

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$0.176

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$0.162

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ChromeModa Solutions

Germany . 4,961 parts In-Stock

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$0.180

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$0.148

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IDEA Electronic Components Group

UK . 580 parts In-Stock

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$0.180

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$0.162

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580

$0.180

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AZTECH Wire

Italy . 455 parts In-Stock

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$10.088

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Microchip USA

USA . 8,806 parts In-Stock

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$15.113

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QUARKTWIN TECHNOLOGY LTD

USA . 17,029 parts In-Stock

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Northwest PG Solutions

USA . 1,170 parts In-Stock

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Supply Digital

USA . 838 parts In-Stock

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Corphita

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Native Components

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Overview

Unlock the power of precision with the 1N4533 by Texas Instruments. Crafted with superior quality and expertise, this diode offers unparalleled performance and reliability for a wide range of applications. From rectification to voltage regulation, this product delivers exceptional value and efficiency, ensuring seamless operation in your projects. Trust Texas Instruments to provide cutting-edge solutions that exceed expectations. Experience the difference today with the 1N4533.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Provides durability and protection for the diode, ensuring a longer lifespan and reliability in various environmental conditions.

Maximum Reverse Recovery Time: 0.002 us

Allows for fast switching and efficient operation, making it suitable for high-speed applications.

Maximum Operating Temperature: 200 °C

Can operate effectively in a wide range of temperature conditions, increasing versatility and suitability for different applications.

Maximum Power Dissipation: 0.5 W

Efficiently dissipates heat generated during operation, preventing overheating and ensuring stable performance.

Maximum Forward Voltage (VF): 0.55 V

Low forward voltage drop minimizes power loss and improves energy efficiency in electronic circuits.

Maximum Output Current: 0.15 A

Capable of handling moderate current levels, suitable for various low-power applications.

Maximum Repetitive Peak Reverse Voltage: 40 V

Provides a high reverse voltage rating, allowing for reliable performance in reverse-biased conditions.

Maximum Non-Repetitive Peak Forward Current: 2 A

Can handle short-term high-current surges without damage, improving the diode's ruggedness and reliability.

Technical Specifications

Diodes & Rectifiers 1N4533 attributes and parameters. Explore more Diodes & Rectifiers devices from Texas Instruments

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.55 V

JESD-30 Code:

O-GALF-W2

Maximum Non Repetitive Peak Forward Current:

2 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Maximum Output Current:

.15 A

Package Body Material:

CERAMIC, GLASS-SEALED

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Recovery Time:

.002 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

1N4533 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

NSN

5961-01-340-1359, 5961013401359, 5961-01-087-0517, 5961010870517, 5961-99-118-5192, 5961991185192

NIIN

013401359, 010870517, 991185192

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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