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1N456ATR

Onsemi

1N456ATR by Onsemi

1N456ATR by Onsemi is a single rectifier diode with max forward voltage of 1V and output current of 0.2A. With a max repetitive peak reverse voltage of 30V, it's ideal for applications requiring low power dissipation in plastic/epoxy packages.

Median Price

$0.032

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 28,925 parts In-Stock

1+ parts

$0.210

100+ parts

$0.079

1k+ parts

$0.051

10k+ parts

$0.032

28,925

$0.210

$0.079

$0.051

$0.032

Rochester

USA . 167,500 parts In-Stock

1+ parts

-

100+ parts

$0.027

1k+ parts

$0.023

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$0.020

167,500

-

$0.027

$0.023

$0.020

Verical

USA . 107,500 parts In-Stock

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107,500

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Arrow

USA . 30,000 parts In-Stock

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Flip Electronics (Authorized)

USA . 10,000 parts In-Stock

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RS (Exports)

UK . 9,400 parts In-Stock

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$0.021

9,400

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$0.021

Chip1Stop

Japan . 21 parts In-Stock

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$0.038

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21

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$0.038

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Distributors (In-Stock)

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Digiode

USA . 994 parts In-Stock

1+ parts

$0.006

100+ parts

-

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994

$0.006

-

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TME

Poland . 9,870 parts In-Stock

1+ parts

$0.130

100+ parts

$0.063

1k+ parts

$0.042

10k+ parts

$0.029

9,870

$0.130

$0.063

$0.042

$0.029

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$3.190

100+ parts

-

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10

$3.190

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DigiKey Marketplace

USA . 60,000 parts In-Stock

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Vyrian

USA . 48,751 parts In-Stock

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Flip Electronics

USA . 20,000 parts In-Stock

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VNN

France . 3,306 parts In-Stock

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3,306

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Distributors (Availability)

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Ampacity Inc.

Singapore . 50,379 parts In-Stock

1+ parts

$0.005

100+ parts

-

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50,379

$0.005

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Semicontronic

India . 48,992 parts In-Stock

1+ parts

$0.005

100+ parts

$0.005

1k+ parts

$0.005

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48,992

$0.005

$0.005

$0.005

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Corphita

USA . 2,319 parts In-Stock

1+ parts

$0.005

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2,319

$0.005

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Corohmni

South Africa . 74 parts In-Stock

1+ parts

$0.006

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74

$0.006

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Argo Parts USA

USA . 2,832 parts In-Stock

1+ parts

$0.006

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$0.006

2,832

$0.006

-

-

$0.006

Component Stockers USA

USA . 131,578 parts In-Stock

1+ parts

$0.030

100+ parts

$0.010

1k+ parts

$0.010

10k+ parts

$0.020

131,578

$0.030

$0.010

$0.010

$0.020

Bastille Electronics

Australia . 200 parts In-Stock

1+ parts

$3.190

100+ parts

$3.030

1k+ parts

$2.879

10k+ parts

$2.839

200

$3.190

$3.030

$2.879

$2.839

Microchip USA

USA . 9,962 parts In-Stock

1+ parts

$23.300

100+ parts

$23.160

1k+ parts

$23.090

10k+ parts

$23.020

9,962

$23.300

$23.160

$23.090

$23.020

Continental Prestige Electronics

USA . 157,500 parts In-Stock

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$0.030

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$0.030

Perfect Parts

USA . 38,116 parts In-Stock

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Kepictronics

USA . 30,000 parts In-Stock

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Metaverse IC Inc.

Canada . 30,000 parts In-Stock

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SupplyDigital Components

Austria . 6,854 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 4,831 parts In-Stock

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Problanco Electronics

Mexico . 2,670 parts In-Stock

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Supply Digital

USA . 2,583 parts In-Stock

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TANS Electronics

Latvia . 1,448 parts In-Stock

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Kulean Microsystems

USA . 1,108 parts In-Stock

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UHIMA Technologies

Türkiye . 107 parts In-Stock

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107

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Overview

Discover the power of the 1N456ATR by Onsemi, a high-quality rectifier diode that offers unmatched performance and reliability. Manufactured by Onsemi, a leader in the industry, this diode is designed to exceed expectations. Ideal for a wide range of applications, this diode provides seamless operation and efficiency. Experience the value and benefits of the 1N456ATR, with its impressive power dissipation capabilities and superior performance. Upgrade your projects with this top-of-the-line diode and see the difference it can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for various applications.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, allowing for reliable operation in challenging environments.

Maximum Power Dissipation: 0.5 W

Efficiently handles power dissipation without overheating or damage.

Diode Type: RECTIFIER DIODE

Designed specifically for rectifying current, ensuring efficient energy conversion.

Maximum Forward Voltage (VF): 1 V

Low forward voltage drop, leading to minimal power loss and efficient operation.

Maximum Output Current: 0.2 A

Capable of handling moderate current levels, suitable for many electronic circuits.

Maximum Repetitive Peak Reverse Voltage: 30 V

Provides protection against reverse voltage spikes, ensuring the diode's longevity.

Diode Element Material: SILICON

Silicon diodes offer reliable performance and stability, ideal for a wide range of applications.

Technical Specifications

Diodes & Rectifiers 1N456ATR attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

4 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

.2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

1N456ATR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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