Loading...

SI3446DV-T3

Temic Semiconductors

SI3446DV-T3 by Temic Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Drain-Source On Resistance: .045 ohm; Maximum Drain Current (ID): 5.3 A;

Median Price

-

Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 61,625 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

61,625

-

-

-

-

Technical Specifications

Power Field Effect Transistors (FET) SI3446DV-T3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Temic Semiconductors

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

5.3 A

Maximum Drain-Source On Resistance:

.045 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

20 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Trade Compliance

SI3446DV-T3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.