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VQ1000N7

Supertex

VQ1000N7 by Supertex

N-CHANNEL; Configuration: SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2 W; Package Style (Meter): IN-LINE; Terminal Position: DUAL;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Power Field Effect Transistors (FET) VQ1000N7 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Supertex

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

.5 A

Maximum Drain Current (ID):

.225 A

Maximum Drain-Source On Resistance:

5.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

5 pF

JESD-30 Code:

R-CDIP-T14

JESD-609 Code:

e0

No. of Elements:

4

No. of Terminals:

14

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Maximum Pulsed Drain Current (IDM):

1 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

10 ns

Maximum Turn On Time (ton):

10 ns

Trade Compliance

VQ1000N7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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