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VP0550N3-GP013

Supertex

VP0550N3-GP013 by Supertex

Supertex VP0550N3-GP013 is a P-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. Operating in ENHANCEMENT MODE, it has 125 ohm Drain-Source On Resistance and can handle up to 0.054A Drain Current. With -55 to 150 °C operating temperature range, this FET features a built-in DIODE and METAL-OXIDE SEMICONDUCTOR technology.

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Corohmni

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Aztec Data Supply Inc.

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AZTECH Wire

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Ampacity Inc.

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Argo Parts USA

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Aranea Global

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Overview

Enhance your electronic designs with the VP0550N3-GP013 by Supertex, a top-tier manufacturer known for quality and reliability. This P-CHANNEL small signal FET with a built-in diode is perfect for switching applications, offering a high DS breakdown voltage of 500V and low on-resistance. Its cylindrical package shape and through-hole terminals make installation a breeze. Trust in Supertex to deliver superior performance and durability. Elevate your projects with the VP0550N3-GP013 and experience unparalleled efficiency and functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: P-CHANNEL

Suitable for applications requiring P-channel transistors, allowing for efficient current flow and control.

Configuration: SINGLE WITH BUILT-IN DIODE

Offers added functionality with a built-in diode, allowing for more versatile applications.

Transistor Application: SWITCHING

Ideal for switching applications due to its fast response time and low power consumption.

Minimum DS Breakdown Voltage: 500 V

Provides a high breakdown voltage, making it suitable for high voltage applications.

Package Shape: ROUND

Compact and efficient design for easy integration into circuits.

Terminal Form: THROUGH-HOLE

Simplifies the process of soldering the transistor onto a circuit board.

Operating Mode: ENHANCEMENT MODE

Operates in enhancement mode, allowing for better control over the transistor's conductivity.

No. of Terminals: 3

Simple and straightforward connection with only 3 terminals.

Package Style (Meter): CYLINDRICAL

Space-saving design that fits well in cylindrical packages.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizes MOSFET technology for improved performance and efficiency.

Maximum Operating Temperature: 150 °C

Can operate reliably at high temperatures, suitable for various environments.

Transistor Element Material: SILICON

High-quality silicon material for durability and reliability.

Minimum Operating Temperature: -55 °C

Can operate in low-temperature conditions, increasing versatility.

Maximum Drain Current (ID): 0.054 A

Capable of handling a maximum drain current of 0.054 A for efficient performance.

Maximum Drain-Source On Resistance: 125 ohm

Low drain-source on resistance for minimal power loss and better efficiency.

Terminal Position: BOTTOM

Simplified installation with bottom terminal position.

Maximum Feedback Capacitance (Crss): 10 pF

Low feedback capacitance for improved high-frequency performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) VP0550N3-GP013 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Supertex

Specs

Minimum DS Breakdown Voltage:

500 V

Maximum Drain Current (ID):

.054 A

Maximum Drain-Source On Resistance:

125 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

10 pF

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

VP0550N3-GP013 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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