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TN2501N8-G

Supertex

TN2501N8-G by Supertex

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JEDEC-95 Code: TO-243AA; Maximum Pulsed Drain Current (IDM): .56 A; Transistor Element Material: SILICON;

Median Price

$1.400

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5

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1k+

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Arrow

USA . 491 parts In-Stock

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$0.641

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$0.604

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$0.603

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491

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$0.603

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Mouser Electronics

USA . 1,850 parts In-Stock

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$1.630

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$1.250

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$1.100

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$1.090

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$1.630

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$1.090

Verical

USA . 1,700 parts In-Stock

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$1.556

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$1.335

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1,700

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$1.556

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Master Electronics

USA . 1,700 parts In-Stock

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$1.244

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$1.122

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$1.111

1,700

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$1.244

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$1.111

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IBS Electronics

USA . 1,700 parts In-Stock

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$2.126

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$1.269

10k+ parts

$0.984

1,700

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$2.126

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$0.984

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Kepictronics

USA . 27,860 parts In-Stock

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27,860

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RGB Technical Solutions

Ukraine . 7,423 parts In-Stock

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7,423

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USA . 6,500 parts In-Stock

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6,500

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Technical Specifications

Power Field Effect Transistors (FET) TN2501N8-G attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Supertex

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE, LOW THRESHOLD

Case Connection:

DRAIN

Configuration:

Minimum DS Breakdown Voltage:

18 V

Maximum Drain Current (ID):

.4 A

Maximum Drain-Source On Resistance:

2.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-243AA

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

.56 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TN2501N8-G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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