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DN3135K1

Supertex

DN3135K1 by Supertex

Supertex DN3135K1 is a N-CHANNEL FET with 350V DS breakdown voltage, ideal for switching applications. It features a built-in diode, operates in depletion mode, and has a max drain current of 0.72A. With GULL WING terminals and small outline package style, it offers high performance in compact designs at up to 150°C operating temperature.

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Vyrian

USA . 184 parts In-Stock

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184

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Nova Conductors

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$0.768

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$0.692

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500

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Corohmni

South Africa . 132 parts In-Stock

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$1.837

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AZTECH Wire

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Bastille Electronics

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100

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Overview

Discover the reliability and performance of the DN3135K1 by Supertex, a top-tier manufacturer known for delivering exceptional quality in the small signal field effect transistor category. Ideal for switching applications, this N-channel transistor offers a myriad of benefits, including a built-in diode and a high minimum DS breakdown voltage of 350V. With its sleek rectangular package design and gull wing terminals, this DEPLETION MODE transistor is perfect for various electronics projects. Trust in Supertex to provide cutting-edge technology and superior products that guarantee efficiency and longevity.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

Allows for efficient current flow in the desired direction, enhancing performance.

Configuration: SINGLE WITH BUILT-IN DIODE

Offers added functionality with the built-in diode, increasing versatility.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in this function.

Surface Mount: YES

Facilitates easy and efficient installation on PCBs, saving time and effort during assembly.

Minimum DS Breakdown Voltage: 350 V

Provides a high breakdown voltage, ensuring the transistor can handle high voltages safely.

Package Shape: RECTANGULAR

Offers a compact and space-saving design, ideal for applications with limited space.

Terminal Form: GULL WING

Enables secure and reliable soldering connections, contributing to the overall durability of the product.

Operating Mode: DEPLETION MODE

Allows for control of current flow in the absence of a signal, offering flexibility in circuit design.

Maximum Power Dissipation (Abs): 0.36 W

Efficiently handles power dissipation, preventing overheating and ensuring long-term reliability.

Package Style (Meter): SMALL OUTLINE

Compact and lightweight design, suitable for portable or space-constrained applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizes modern technology for improved performance and efficiency in operation.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, suitable for demanding environments.

Transistor Element Material: SILICON

Uses Silicon material known for its reliability and performance in semiconductor devices.

Terminal Finish: TIN LEAD

Provides a durable and reliable finish for the terminals, ensuring secure connections.

Maximum Drain Current (ID): 0.72 A

Can handle high drain currents, suitable for applications requiring higher power levels.

Maximum Drain-Source On Resistance: 35 ohm

Low on-resistance ensures efficient current flow and minimal power loss in the transistor.

Terminal Position: DUAL

Dual terminal position allows for versatile and flexible connection options in the circuit.

Maximum Feedback Capacitance (Crss): 10 pF

Low feedback capacitance enhances high-frequency performance and stability in the transistor.

Technical Specifications

Small Signal Field Effect Transistors (FET) DN3135K1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Supertex

Specs

Additional Features:

LOW THRESHOLD

Minimum DS Breakdown Voltage:

350 V

Maximum Drain Current (ID):

.72 A

Maximum Drain-Source On Resistance:

35 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

10 pF

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DN3135K1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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