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DN3145N8-G

Microchip Technology

DN3145N8-G by Microchip Technology

DN3145N8-G by Microchip Technology is a N-CHANNEL FET with 450V DS Breakdown Voltage, ideal for SWITCHING applications. Operating in DEPLETION MODE, it has 0.3A IDM and 60 ohm Drain-Source On Resistance. With a max power dissipation of 1.3W, it can handle temperatures from -55 to 150 °C.

Median Price

$0.870

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 5,000 parts In-Stock

1+ parts

$0.648

100+ parts

$0.648

1k+ parts

$0.648

10k+ parts

-

5,000

$0.648

$0.648

$0.648

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Arrow

USA . 1,307 parts In-Stock

1+ parts

$0.872

100+ parts

$0.832

1k+ parts

$0.791

10k+ parts

-

1,307

$0.872

$0.832

$0.791

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Mouser Electronics

USA . 43,215 parts In-Stock

1+ parts

$0.900

100+ parts

-

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43,215

$0.900

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DigiKey

USA . 18,736 parts In-Stock

1+ parts

$0.900

100+ parts

$0.750

1k+ parts

-

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18,736

$0.900

$0.750

-

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Master Electronics

USA . 30,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.739

10k+ parts

$0.666

30,000

-

-

$0.739

$0.666

Verical

USA . 30,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.869

10k+ parts

$0.786

30,000

-

-

$0.869

$0.786

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.690

100+ parts

-

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100

$0.690

-

-

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NAC Semi

USA . 6,000 parts In-Stock

1+ parts

$0.890

100+ parts

$0.810

1k+ parts

$0.720

10k+ parts

-

6,000

$0.890

$0.810

$0.720

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DF Sales Co.

USA . 150 parts In-Stock

1+ parts

$1.730

100+ parts

-

1k+ parts

-

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150

$1.730

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-

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DF Sales Co.

USA . 150 parts In-Stock

1+ parts

$1.730

100+ parts

-

1k+ parts

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150

$1.730

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Vyrian

USA . 39,334 parts In-Stock

1+ parts

-

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39,334

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Electro Sonic

Canada . 34,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.626

34,000

-

-

-

$0.626

IBS Electronics

USA . 30,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.954

10k+ parts

$0.930

30,000

-

-

$0.954

$0.930

Chip Stock

USA . 8,240 parts In-Stock

1+ parts

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8,240

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PC Components Company LLC

USA . 13 parts In-Stock

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13

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Bristol Electronics

USA . 13 parts In-Stock

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13

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 105 parts In-Stock

1+ parts

$0.506

100+ parts

-

1k+ parts

-

10k+ parts

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105

$0.506

-

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

1+ parts

$0.648

100+ parts

$0.648

1k+ parts

$0.648

10k+ parts

-

5,000

$0.648

$0.648

$0.648

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Continental Prestige Electronics

USA . 3,350 parts In-Stock

1+ parts

$0.655

100+ parts

-

1k+ parts

-

10k+ parts

$0.642

3,350

$0.655

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-

$0.642

Argo Parts USA

USA . 410 parts In-Stock

1+ parts

$0.655

100+ parts

-

1k+ parts

-

10k+ parts

$0.635

410

$0.655

-

-

$0.635

Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$0.676

100+ parts

-

1k+ parts

$0.649

10k+ parts

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1,000

$0.676

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$0.649

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Component Stockers USA

USA . 286,953 parts In-Stock

1+ parts

$0.800

100+ parts

$0.680

1k+ parts

$0.640

10k+ parts

$0.580

286,953

$0.800

$0.680

$0.640

$0.580

Semicontronic

India . 39,407 parts In-Stock

1+ parts

$1.170

100+ parts

$1.141

1k+ parts

$1.135

10k+ parts

-

39,407

$1.170

$1.141

$1.135

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Ampacity Inc.

Singapore . 39,402 parts In-Stock

1+ parts

$1.170

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39,402

$1.170

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Aztec Data Supply Inc.

USA . 2,854 parts In-Stock

1+ parts

$1.675

100+ parts

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2,854

$1.675

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Microchip USA

USA . 6,226 parts In-Stock

1+ parts

$4.485

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6,226

$4.485

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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RC Electronics

USA . 24,270 parts In-Stock

1+ parts

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100+ parts

$0.670

1k+ parts

$0.610

10k+ parts

$0.590

24,270

-

$0.670

$0.610

$0.590

Kepictronics

USA . 23,535 parts In-Stock

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23,535

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Futuretech Components

Singapore . 20,000 parts In-Stock

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Perfect Parts

USA . 18,919 parts In-Stock

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18,919

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Lixinc

USA . 11,233 parts In-Stock

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11,233

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A-Z Elektronik GmbH

Germany . 2,600 parts In-Stock

1+ parts

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2,600

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Marpe Global Electronics

Taiwan . 1,970 parts In-Stock

1+ parts

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1,970

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QualityLine Systems

Poland . 1,970 parts In-Stock

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1,970

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XL Components Corporation

Australia . 1,970 parts In-Stock

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1,970

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Overview

Discover the powerful DN3145N8-G by Microchip Technology, a top-tier Small Signal Field Effect Transistor (FET) with unparalleled quality and reliability. Ideal for switching applications, this N-CHANNEL transistor offers a seamless performance with its built-in diode and high minimum DS breakdown voltage of 450V. With a compact package shape and surface mount capability, this FET maximizes space efficiency without compromising on power. Experience the benefits of quick turn-on/off times, efficient power dissipation, and superior performance in a wide range of operating temperatures. Upgrade your electronics with the DN3145N8-G today and unleash its full potential in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: N-CHANNEL

N-channel transistors are commonly used in switching applications and offer efficient performance in various circuit designs.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode enhances the efficiency of the transistor and allows for smoother switching operations in the circuit.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides fast and reliable switching capabilities for different electronic devices.

Minimum DS Breakdown Voltage: 450 V

With a minimum breakdown voltage of 450 V, this transistor can handle high voltage levels, making it suitable for a wide range of electronic applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and integration into circuit boards, contributing to a compact and efficient design.

Terminal Form: FLAT

Flat terminals offer a secure and stable connection, ensuring proper functioning of the transistor within the circuit.

Operating Mode: DEPLETION MODE

Operating in depletion mode allows for better control and regulation of current flow, leading to enhanced performance and stability in circuit operations.

Maximum Pulsed Drain Current (IDM): 0.3 A

The high maximum pulsed drain current rating of 0.3 A enables the transistor to handle short bursts of current without overheating or malfunctioning.

No. of Terminals: 3

Having 3 terminals allows for easy connection to external circuits and components, simplifying the overall design and integration process.

Maximum Power Dissipation (Abs): 1.3 W

The high maximum power dissipation rating of 1.3 W ensures that the transistor can handle power efficiently and effectively without damage or performance degradation.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for compact layouts in electronic devices, making it ideal for applications with limited space.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance, low power consumption, and reliable operation, making this transistor a reliable choice for various electronic applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures and harsh environments, ensuring reliable performance under extreme conditions.

Transistor Element Material: SILICON

Silicon-based transistors are known for their high performance, durability, and reliability, making this product a reliable choice for a wide range of electronic applications.

Maximum Turn On Time (ton): 25 ns

The fast turn-on time of 25 ns ensures quick response and efficient switching operations, making this transistor ideal for applications requiring speed and accuracy.

Minimum Operating Temperature: -55 °C

With a minimum operating temperature of -55°C, this transistor can operate effectively in cold environments and extreme temperature conditions, ensuring reliable performance in any situation.

Maximum Turn Off Time (toff): 55 ns

The fast turn-off time of 55 ns allows for precise control and efficient switching in circuit operations, making this transistor a reliable choice for applications requiring quick response times.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides a reliable and stable connection, ensuring optimal performance and longevity of the transistor in various electronic applications.

Maximum Drain Current (ID): 0.1 A

The high maximum drain current rating of 0.1 A enables the transistor to handle current flow without overheating or performance issues, ensuring reliable operation in demanding applications.

Maximum Drain-Source On Resistance: 60 ohm

With a low drain-source on resistance of 60 ohm, this transistor offers efficient current flow and minimal power loss, making it a cost-effective and energy-efficient choice for various electronic circuits.

Terminal Position: SINGLE

Single terminal position simplifies the connection process and allows for easy integration into circuit designs, streamlining the overall layout and functionality of electronic devices.

Case Connection: DRAIN

The drain case connection ensures proper heat dissipation and reliable performance of the transistor, enhancing its efficiency and longevity in various electronic applications.

Maximum Time At Peak Reflow Temperature (s): 40

The maximum time at peak reflow temperature of 40 seconds guarantees safe and effective soldering processes, ensuring reliable connections and consistent performance of the transistor.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this transistor can withstand high-temperature soldering processes, making it suitable for automated assembly and mass production of electronic devices.

Maximum Feedback Capacitance (Crss): 10 pF

The low feedback capacitance of 10 pF minimizes signal distortion and interference, ensuring clean and reliable performance of the transistor in high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) DN3145N8-G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Microchip Technology

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

450 V

Maximum Drain Current (ID):

.1 A

Maximum Drain-Source On Resistance:

60 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

10 pF

JEDEC-95 Code:

TO-243AA

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

.3 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

55 ns

Maximum Turn On Time (ton):

25 ns

Trade Compliance

DN3145N8-G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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