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TYN808G

STMicroelectronics

TYN808G by STMicroelectronics

TYN808G by STMicroelectronics is a single SCR in a rectangular plastic package, ideal for high-voltage applications. It supports up to 800 V repetitive peak reverse voltage and 84 A non-repetitive peak on-state current. This component operates efficiently b/w -40 °C and 125°C, making it suitable for various industrial uses.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,026 parts In-Stock

1+ parts

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4,026

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Vyrian

USA . 3,845 parts In-Stock

1+ parts

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3,845

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Anansix

USA . 2,261 parts In-Stock

1+ parts

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2,261

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,001 parts In-Stock

1+ parts

$2.531

100+ parts

-

1k+ parts

$2.278

10k+ parts

-

1,001

$2.531

-

$2.278

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MKK Technologies

India . 363 parts In-Stock

1+ parts

$4.759

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363

$4.759

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DigiPath Technology Company

USA . 363 parts In-Stock

1+ parts

$4.759

100+ parts

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363

$4.759

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Corphita

USA . 4,491 parts In-Stock

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4,491

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Parana Technologies

USA . 2,066 parts In-Stock

1+ parts

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100+ parts

$3.026

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2,066

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$3.026

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Overview

Experience unparalleled performance with the TYN808G from STMicroelectronics, a leader in innovative semiconductor solutions. This Silicon Controlled Rectifier delivers exceptional reliability and efficiency for a wide range of applications, from motor control to power conversion. With its robust design and impressive specifications, the TYN808G ensures optimal durability even in extreme conditions, offering customers unmatched value and peace of mind in their electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material offers durability and protection against environmental factors, making it suitable for various applications.

Maximum DC Gate Trigger Current: 25 mA

A relatively low gate current requirement allows for reduced power consumption during operation.

Configuration: SINGLE

The single configuration simplifies circuit design and integration into existing systems.

Non Repetitive Peak On-state Current: 84 A

This high peak current capability makes the product suitable for handling large transient currents.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient use of space in electronic assemblies.

Terminal Form: THROUGH-HOLE

Through-hole mounting provides robust mechanical support and reliability in electronic connections.

Maximum On-state Current: 5 A

This moderate on-state current rating ensures reliable operation under normal load conditions.

Maximum Leakage Current: 2 mA

A low leakage current contributes to enhanced energy efficiency and reduced power loss.

Repetitive Peak Reverse Voltage: 800 V

The high repetitive peak reverse voltage enables the SCR to be used in high-voltage applications without failure.

Maximum Repetitive Peak Off-state Leakage Current: 10 uA

Minimized off-state leakage supports higher energy efficiency and lower heat generation.

No. of Terminals: 3

The three-terminal design facilitates straightforward integration into various circuit configurations.

Package Style (Meter): FLANGE MOUNT

Flange mounting provides enhanced thermal management and stability in installation.

Maximum Operating Temperature: 125 °C

A high operating temperature allows for versatile application in demanding environments.

Trigger Device Type: SCR

As an SCR, this component provides robust switching capabilities, ideal for power control applications.

Minimum Operating Temperature: -40 °C

The wide temperature range ensures reliable performance in extreme conditions.

Terminal Finish: MATTE TIN

Matte tin finish enhances solderability and improves overall connection reliability.

Terminal Position: SINGLE

Single terminal position simplifies layout and circuit design, facilitating easier integration.

Maximum RMS On-state Current: 8 A

This capability supports a higher continuous load, enhancing its versatility in different applications.

Maximum DC Gate Trigger Voltage: 1.5 V

A low trigger voltage supports compatibility with a variety of control circuits, reducing design complexity.

Repetitive Peak Off-state Voltage: 800 V

The ability to handle high off-state voltages ensures safe operation in high-voltage systems.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/us

A high critical rate of voltage rise supports fast switching applications, enhancing overall system performance.

Maximum Holding Current: 45 mA

This low holding current enables controlled turn-on and turn-off characteristics, improving circuit reliability.

Nominal Circuit Commutated Turn-off Time: 70 us

A fast turn-off time reduces switching losses, making it ideal for efficient power control applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TYN808G attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Nominal Circuit Commutated Turn-off Time:

70 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

25 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

45 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

84 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

5 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

8 A

Maximum Repetitive Peak Off-state Leakage Current:

10 uA

Repetitive Peak Off-state Voltage:

800 V

Repetitive Peak Reverse Voltage:

800 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

TYN808G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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