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TYN056

STMicroelectronics

TYN056 by STMicroelectronics

TYN056 by STMicroelectronics is a single SCR in a rectangular plastic/epoxy package, ideal for power control applications. It features a max DC gate trigger current of 15 mA, non-repetitive peak on-state current of 80 A, and operates b/w -40 °C to 125°C. This device ensures reliable performance with low leakage currents and quick turn-off times.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,801 parts In-Stock

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4,801

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Digiode

USA . 1,580 parts In-Stock

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1,580

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Anansix

USA . 514 parts In-Stock

1+ parts

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514

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ECAB

Sweden . 94 parts In-Stock

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94

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Corel Iberica Componentes, S.L.

Spain . 6 parts In-Stock

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6

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,385 parts In-Stock

1+ parts

$2.004

100+ parts

-

1k+ parts

$1.803

10k+ parts

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1,385

$2.004

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$1.803

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MKK Technologies

India . 1,735 parts In-Stock

1+ parts

$3.768

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1,735

$3.768

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DigiPath Technology Company

USA . 1,735 parts In-Stock

1+ parts

$3.768

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1,735

$3.768

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Corphita

USA . 1,334 parts In-Stock

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1,334

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Parana Technologies

USA . 6 parts In-Stock

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$2.396

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6

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$2.396

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Assy Fe

Spain . 6 parts In-Stock

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6

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Overview

Elevate your designs with the TYN056 from STMicroelectronics, a top-tier Silicon Controlled Rectifier (SCR) renowned for its reliability and performance. Crafted with precision in durable plastic/epoxy, this robust component ensures seamless operation across various applications, from industrial controls to power management systems. Benefit from its exceptional current handling and low leakage characteristics, delivering efficiency and longevity that empower your projects to excel. Choose TYN056 and experience the quality that only STMicroelectronics can provide!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides durability and resistance to environmental factors, making this SCR suitable for various applications.

Maximum DC Gate Trigger Current: 15 mA

A low gate trigger current reduces power consumption and enhances circuit efficiency, making this SCR an energy-saving choice.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easier for engineers to incorporate this SCR into their projects.

Non Repetitive Peak On-state Current: 80 A

This high peak on-state current allows the SCR to handle significant surges, making it suitable for high-demand applications.

Package Shape: RECTANGULAR

The rectangular package shape enables efficient space utilization on circuit boards, facilitating compact designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical connections, ensuring reliable performance in various mounting environments.

Maximum On-state Current: 6 A

With a maximum on-state current of 6 A, this SCR can handle typical load requirements, making it versatile for many applications.

Maximum Leakage Current: 2 mA

Low leakage current indicates minimal power loss in dormant state, contributing to energy efficiency and reliability.

Repetitive Peak Reverse Voltage: 50 V

A repetitive peak reverse voltage of 50 V ensures it can withstand voltage spikes, enhancing its durability in harsh conditions.

Maximum Repetitive Peak Off-state Leakage Current: 10 uA

Low off-state leakage current minimizes unwanted energy loss, helping to improve overall system efficiency.

No. of Terminals: 3

Three terminals facilitate easy connection and integration into various circuit designs, offering versatility in applications.

Package Style (Meter): FLANGE MOUNT

Flange mount design offers easy installation and secure mounting, ensuring stable operation in demanding environments.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature ensures reliable performance even in elevated thermal conditions, making it suitable for industrial applications.

Trigger Device Type: SCR

Being an SCR type allows for efficient control of high power with low input, enhancing its ability to manage power electronics.

Minimum Operating Temperature: -40 °C

A wide operating temperature range ensures reliable performance in extreme conditions, offering versatility for various environments.

Terminal Finish: MATTE TIN

Matte tin finish provides excellent solderability and corrosion resistance, ensuring long-term performance in circuit assemblies.

Terminal Position: SINGLE

Single terminal position simplifies design integration and minimizes complexity in connections.

Maximum RMS On-state Current: 6 A

This on-state current rating ensures that the SCR can handle normal operating conditions reliably.

Maximum DC Gate Trigger Voltage: 1.5 V

A low gate trigger voltage ensures lower power requirements when triggering the SCR, leading to more efficient designs.

Repetitive Peak Off-state Voltage: 50 V

A high off-state voltage rating contributes to the SCR's ability to operate safely in high-voltage environments.

Minimum Critical Rate of Rise of Off-state Voltage: 200 V/us

A high rate of rise in voltage capability allows for fast switching and improved performance in dynamic applications.

Maximum Holding Current: 30 mA

With a maximum holding current of 30 mA, this SCR can maintain its conducting state efficiently, adding to system stability.

Nominal Circuit Commutated Turn-off Time: 70 us

A fast turn-off time enhances system responsiveness in applications that require quick switching, making it ideal for high-speed operations.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TYN056 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Nominal Circuit Commutated Turn-off Time:

70 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

200 V/us

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

30 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

80 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

6 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

6 A

Maximum Repetitive Peak Off-state Leakage Current:

10 uA

Repetitive Peak Off-state Voltage:

50 V

Repetitive Peak Reverse Voltage:

50 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

TYN056 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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