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TYN0510

STMicroelectronics

TYN0510 by STMicroelectronics

TYN0510 by STMicroelectronics is a single SCR in a rectangular plastic/epoxy package, ideal for power control applications. It features a max DC gate trigger current of 15 mA, non-repetitive peak on-state current of 100 A, and operates b/w -40 °C to 125°C. This component is perfect for managing high voltage and current in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,853 parts In-Stock

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1,853

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Anansix

USA . 1,539 parts In-Stock

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1,539

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ECAB

Sweden . 251 parts In-Stock

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251

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Digiode

USA . 96 parts In-Stock

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96

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,526 parts In-Stock

1+ parts

$3.746

100+ parts

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1k+ parts

$3.372

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1,526

$3.746

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$3.372

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MKK Technologies

India . 1,191 parts In-Stock

1+ parts

$7.045

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1,191

$7.045

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DigiPath Technology Company

USA . 1,191 parts In-Stock

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$7.045

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1,191

$7.045

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Corphita

USA . 2,766 parts In-Stock

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2,766

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Parana Technologies

USA . 2,067 parts In-Stock

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$4.479

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2,067

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$4.479

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Overview

Elevate your power management solutions with the TYN0510 from STMicroelectronics. Renowned for its exceptional reliability and performance, this Silicon Controlled Rectifier (SCR) excels in handling demanding applications, from motor control to lighting systems. With a robust design capable of enduring extreme conditions, it ensures seamless operation and longevity, giving you peace of mind. Experience unmatched quality and innovation, backed by STMicroelectronics' expertise, and unlock new possibilities for your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy material enhances the product's resistance to environmental factors, ensuring reliability in various applications.

Maximum DC Gate Trigger Current: 15 mA

With a relatively low trigger current requirement, this SCR can be easily driven by standard control circuits, improving integration flexibility.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces the overall footprint of the system, making it more compact.

Non Repetitive Peak On-state Current: 100 A

This high peak on-state current capability allows for handling demanding applications, enhancing its performance in power control.

Package Shape: RECTANGULAR

The rectangular shape is ideal for efficient space utilization on PCBs, facilitating easy placement in various layouts.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical support and better soldering reliability, suitable for high-power applications.

Maximum On-state Current: 10 A

A maximum on-state current of 10 A ensures the SCR can handle significant loads, making it suitable for a wide range of applications.

Maximum Leakage Current: 2 mA

Low leakage current contributes to energy efficiency and reduces heat generation, enhancing the overall reliability of the circuit.

Repetitive Peak Reverse Voltage: 50 V

A repetitive peak reverse voltage of 50 V makes this SCR suitable for applications with moderate voltage requirements, improving its versatility.

Maximum Repetitive Peak Off-state Leakage Current: 10 uA

Extremely low off-state leakage current helps to minimize power loss in quiescent state, enhancing the efficiency of the device.

No. of Terminals: 3

Three terminals facilitate easy connections and allow for simple circuit configurations, increasing design convenience.

Package Style (Meter): FLANGE MOUNT

Flange mount design provides additional mechanical stability, especially in high-vibration environments, making it ideal for industrial applications.

Maximum Operating Temperature: 125 °C

A maximum operating temperature of 125 °C allows this SCR to function in demanding environments without compromising performance.

Trigger Device Type: SCR

The SCR trigger mechanism makes this product suitable for efficient control of AC and DC loads, enhancing its applicability.

Minimum Operating Temperature: -40 °C

Operating down to -40 °C ensures reliable performance in extreme cold conditions, broadening the range of applications.

Terminal Finish: MATTE TIN

The matte tin finish improves solderability, ensuring reliable electrical connections and extending the lifespan of the component.

Terminal Position: SINGLE

A single terminal position simplifies connections and reduces potential errors during assembly in PCB design.

Maximum RMS On-state Current: 10 A

Allows for consistent on-state performance under normal operating conditions, ensuring stable operation in various applications.

Maximum DC Gate Trigger Voltage: 1.5 V

A low gate trigger voltage improves compatibility with low-voltage control circuits while maximizing power efficiency.

Repetitive Peak Off-state Voltage: 50 V

This voltage capacity is suitable for multiple applications, ensuring that the device can operate safely under typical loads.

Minimum Critical Rate of Rise of Off-state Voltage: 200 V/us

High rate of voltage rise capability contributes to efficient switching, enhancing operational response in fast-switching applications.

Maximum Holding Current: 30 mA

A maximum holding current of 30 mA ensures stable operation after triggering, preventing unintended turn-off.

Nominal Circuit Commutated Turn-off Time: 70 us

A fast turn-off time improves the efficiency of the SCR in switching applications, allowing for higher frequency operation.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TYN0510 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Nominal Circuit Commutated Turn-off Time:

70 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

200 V/us

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

30 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

100 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

10 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

10 A

Maximum Repetitive Peak Off-state Leakage Current:

10 uA

Repetitive Peak Off-state Voltage:

50 V

Repetitive Peak Reverse Voltage:

50 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

TYN0510 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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