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TS1854IN

STMicroelectronics

TS1854IN by STMicroelectronics

TS1854IN by STMicroelectronics is a micropower operational amplifier ideal for automotive applications. It features a max input offset voltage of 3000 µV, a common mode reject ratio of 90 dB, and operates within -40 °C to 125°C. This versatile op-amp supports supply voltages from 1.8V to 7V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,444 parts In-Stock

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8,444

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Digiode

USA . 2,804 parts In-Stock

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2,804

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Anansix

USA . 1,426 parts In-Stock

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1,426

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IDEA Electronic Components Group

UK . 1,607 parts In-Stock

1+ parts

$3.776

100+ parts

-

1k+ parts

$3.398

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-

1,607

$3.776

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$3.398

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MKK Technologies

India . 427 parts In-Stock

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$7.100

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427

$7.100

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DigiPath Technology Company

USA . 427 parts In-Stock

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$7.100

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427

$7.100

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Microchip USA

USA . 364 parts In-Stock

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$8.416

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364

$8.416

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AZTECH Wire

Italy . 1,152 parts In-Stock

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$12.270

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$12.270

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A-Z Elektronik GmbH

Germany . 5,583 parts In-Stock

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Vigor

Singapore . 2,368 parts In-Stock

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2,368

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Parana Technologies

USA . 1,275 parts In-Stock

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$4.514

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$4.514

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Assy Fe

Spain . 700 parts In-Stock

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700

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Corphita

USA . 56 parts In-Stock

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Overview

Elevate your designs with the TS1854IN from STMicroelectronics, featuring exceptional precision and reliability for a variety of applications. Renowned for their quality and innovation, STMicroelectronics ensures this operational amplifier delivers unmatched performance in automotive environments. With its micropower capabilities and robust thermal range, it empowers engineers to create efficient, high-performance solutions tailored to meet demanding requirements while maximizing value and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the body material ensures durability and reliability in various environments, making it a good choice for long-term applications.

Maximum Input Offset Voltage: 3000 uV

The low maximum input offset voltage enables accurate signal amplification, making the op-amp suitable for precision applications.

Maximum Average Bias Current (IIB): 0.055 uA

A low average bias current ensures minimal power consumption, making this op-amp ideal for battery-operated and micropower applications.

No. of Functions: 4

Having four functions enhances versatility, allowing it to perform multiple tasks in a single package, which is space-efficient.

Package Shape: RECTANGULAR

The rectangular package shape facilitates easier PCB layout and integration into various circuit designs.

Nominal Common Mode Reject Ratio: 90 dB

A high common mode reject ratio improves the op-amp's ability to reject noise and interference, ensuring cleaner output signals.

Nominal Supply Voltage / Vsup (V): 3

A nominal supply voltage of 3V is suitable for modern low-voltage systems, enhancing compatibility with various devices.

Power Supplies (V): 1.8/5

Support for a range of power supplies from 1.8V to 5V increases flexibility in design and application across different systems.

No. of Terminals: 14

The 14-terminal configuration allows for multiple functionalities while maintaining a compact design, which is beneficial for complex circuits.

Package Style (Meter): IN-LINE

The in-line package style is suited for through-hole mounting, making it easier for prototyping and integration into existing PCB layouts.

Maximum Supply Voltage Limit: 7 V

The ability to handle up to 7V makes it suitable for various applications without risk of damage due to over-voltage.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature allows this op-amp to function reliably in demanding environments, particularly in automotive applications.

Maximum Bias Current (IIB) @ 25 °C: 0.063 uA

Maintaining a low bias current at 25 °C contributes to minimal power draw, making it suitable for low-power applications.

Frequency Compensation: YES

With frequency compensation, this op-amp can maintain stability across a range of frequencies, ensuring reliable performance.

Minimum Operating Temperature: -40 °C

The capability to operate at -40 °C ensures the op-amp can perform reliably in extreme conditions, ideal for automotive and industrial applications.

Terminal Finish: MATTE TIN

The matte tin finish enhances solderability and resistance to corrosion, ensuring reliable electrical connections.

Terminal Position: DUAL

The dual terminal position simplifies the circuit layout and enhances ease of installation.

Maximum Seated Height: 5.1 mm

A compact maximum seated height allows the op-amp to fit easily into tight spaces on a PCB.

Width: 7.62 mm

The width of 7.62 mm is suitable for various PCB layouts while maintaining stability and performance.

Micropower: YES

Being a micropower device ensures minimal energy consumption, ideal for portable applications and long battery life.

Length: 20 mm

A length of 20 mm offers a balance between size and performance, making the op-amp adaptable for various applications.

Temperature Grade: AUTOMOTIVE

An automotive temperature grade indicates reliability under harsh conditions, suitable for automotive electronics.

Nominal Unity Gain Bandwidth: 600 kHz

A nominal unity gain bandwidth of 600 kHz makes it effective for a wide range of audio and signal processing applications.

Technology: BIPOLAR

Bipolar technology provides improved performance in speed and power consumption, making the op-amp more efficient.

Terminal Form: THROUGH-HOLE

The through-hole terminal form allows for robust connections, ensuring better mechanical stability in high-vibration environments.

Amplifier Type: OPERATIONAL AMPLIFIER

As a true operational amplifier, it provides high gain and flexibility for amplification, filtering, and signal processing applications.

Maximum Supply Current: 0.22 mA

A low maximum supply current helps in energy-efficient designs, particularly in battery-powered applications.

Architecture: VOLTAGE-FEEDBACK

The voltage-feedback architecture allows for greater flexibility and ease of use in feedback applications, enhancing performance.

Nominal Slow Rate: 0.2 V/us

A nominal slow rate of 0.2 V/µs is adequate for many applications, maintaining stable performance across different frequency ranges.

Terminal Pitch: 2.54 mm

A standard terminal pitch of 2.54 mm ensures compatibility with a wide range of PCB designs and manufacturing processes.

Technical Specifications

Operational Amplifiers (Op Amps) TS1854IN attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

1.8/5 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

600 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

90 dB

Input Offset Voltage Limit:

3000 uV

Nominal Slew Rate:

0.2 V/us

Peak Bias Current:

55 nA

Maximum Bias Current (IIB) @25 °C:

63 nA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

7 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

220 μA

Physical Characteristics

Length:

0.787 in (20 mm)

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.201 in (5.1 mm)

Total Terminals:

14

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Matte Tin

Package Body Material:

Plastic/Epoxy

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDIP-T14

JESD-609 Code:

e3

Packaging and Shipping

Package Code:

DIP

Package Shape:

Package Style:

In Line

Package Equivalence Code:

DIP14,.3

Trade Compliance

TS1854IN Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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