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STU7NA60

STMicroelectronics

STU7NA60 by STMicroelectronics

STU7NA60 by STMicroelectronics is an N-CHANNEL FET with 7.6A max drain current and 135W power dissipation. Ideal for applications requiring high-power switching in enhancement mode operation up to 150 °C, featuring metal-oxide semiconductor technology and matte tin terminal finish.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,956 parts In-Stock

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2,956

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Anansix

USA . 2,855 parts In-Stock

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2,855

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Digiode

USA . 1,244 parts In-Stock

1+ parts

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1,244

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 469 parts In-Stock

1+ parts

$0.845

100+ parts

-

1k+ parts

$0.760

10k+ parts

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469

$0.845

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$0.760

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MKK Technologies

India . 2,122 parts In-Stock

1+ parts

$1.588

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2,122

$1.588

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DigiPath Technology Company

USA . 2,122 parts In-Stock

1+ parts

$1.588

100+ parts

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2,122

$1.588

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Corphita

USA . 1,461 parts In-Stock

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1,461

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Parana Technologies

USA . 1,312 parts In-Stock

1+ parts

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100+ parts

$1.010

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1,312

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$1.010

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Overview

Unlock the power of innovation with the STU7NA60 by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers top-quality Power Field Effect Transistors that are versatile and reliable. Ideal for a wide range of applications, this N-CHANNEL transistor offers enhanced performance and efficiency. With a maximum drain current of 7.6A and a maximum power dissipation of 135W, the STU7NA60 provides exceptional value and benefits to customers looking for a high-performance solution. Trust STMicroelectronics to deliver excellence in every product.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL FETs have lower on-resistance and higher current-carrying capability compared to P-CHANNEL FETs, making them suitable for many applications.

Configuration: SINGLE

SINGLE configuration simplifies circuit design and makes it easier to control compared to DUAL configurations.

Operating Mode: ENHANCEMENT MODE

ENHANCEMENT MODE FETs are normally off and require a positive voltage on the gate to turn on. This provides better control over the switching characteristics.

Maximum Drain Current (ID): 7.6 A

With a high maximum drain current, this FET can handle substantial current loads, making it suitable for power applications.

Maximum Power Dissipation: 135 W

The high maximum power dissipation allows the FET to handle large power loads without overheating, ensuring reliable operation.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers high efficiency, fast switching speeds, and low on-resistance, making it suitable for power applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this FET can operate reliably in demanding environments without thermal issues.

Terminal Finish: Matte Tin (Sn)

Matte Tin finish provides good solderability and corrosion resistance, ensuring reliable connections in the circuit.

Technical Specifications

Power Field Effect Transistors (FET) STU7NA60 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

7.6 A

Maximum Drain Current (ID):

7.6 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Trade Compliance

STU7NA60 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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