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STTA512FP

STMicroelectronics

STTA512FP by STMicroelectronics

STTA512FP by STMicroelectronics is a high-voltage ultra-fast soft recovery rectifier diode. It features a max reverse recovery time of 0.095 µs, supports up to 1200 V peak reverse voltage, and operates at 150 °C. Ideal for demanding power applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,340 parts In-Stock

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4,340

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Vyrian

USA . 2,363 parts In-Stock

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2,363

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Anansix

USA . 580 parts In-Stock

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580

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ComSIT Distribution GmbH

Germany . 80 parts In-Stock

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80

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ACDS - Activité Composants Distribution Service

France . 45 parts In-Stock

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45

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Cogito LLC

Ukraine . 3 parts In-Stock

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IDEA Electronic Components Group

UK . 2,018 parts In-Stock

1+ parts

$0.147

100+ parts

-

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$0.132

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2,018

$0.147

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$0.132

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MKK Technologies

India . 2,030 parts In-Stock

1+ parts

$0.277

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2,030

$0.277

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DigiPath Technology Company

USA . 2,030 parts In-Stock

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$0.277

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2,030

$0.277

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AZTECH Wire

Italy . 821 parts In-Stock

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$14.520

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821

$14.520

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 8,142 parts In-Stock

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Corphita

USA . 4,769 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,580 parts In-Stock

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4,580

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Kepictronics

USA . 3,250 parts In-Stock

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3,250

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Parana Technologies

USA . 1,427 parts In-Stock

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$0.176

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1,427

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$0.176

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Overview

Unlock unparalleled performance with the STTA512FP by STMicroelectronics! Designed for high voltage and ultra-fast applications, this robust rectifier diode ensures reliability and efficiency, even in demanding environments. With exceptional recovery times and a compact flange mount design, it seamlessly integrates into your projects. Trust in STMicroelectronics' legacy of quality to elevate your designs, delivering superior value and lasting benefits for your innovations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the body material provides durability and resistance to environmental factors, making the diode reliable for long-term applications.

Configuration: SINGLE

A single configuration simplifies circuit design and integration, offering a straightforward solution for various applications.

Maximum Reverse Recovery Time: 0.095 us

A low reverse recovery time ensures fast switching, improving efficiency in high-frequency applications and reducing power losses.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient use of space on PCB layouts, facilitating compact designs.

Number of Terminals: 2

Having two terminals makes for easier mounting and soldering, streamlining the assembly process.

Package Style (Meter): FLANGE MOUNT

Flange mount style enhances mechanical stability, ensuring the diode remains securely attached during operation.

Application: HIGH VOLTAGE ULTRA FAST SOFT RECOVERY

Designed for high voltage applications, this diode excels in environments requiring fast recovery without compromising performance.

Maximum Operating Temperature: 150 °C

A high operating temperature rating enables this diode to function effectively in demanding thermal conditions, increasing its versatility.

Terminal Finish: MATTE TIN

The matte tin finish improves solderability and enhances corrosion resistance, ensuring reliable electrical connections.

Terminal Position: SINGLE

The single terminal position facilitates straightforward integration into various circuit configurations, enhancing design flexibility.

Case Connection: ISOLATED

An isolated case connection improves safety and reduces the risk of short-circuits, making it a safer choice for electronic applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is optimized for converting AC to DC, which is essential for numerous power supply applications.

Maximum Forward Voltage (VF): 2 V

A low forward voltage drop improves overall efficiency in the circuit by reducing power dissipation during operation.

Maximum Output Current: 5 A

With a maximum output current of 5 A, this diode is capable of handling substantial loads, making it suitable for high-power applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections and are ideal for applications requiring high durability and robust performance.

Maximum Repetitive Peak Reverse Voltage: 1200 V

A high reverse voltage rating allows this diode to withstand significant voltage spikes, enhancing its reliability in high-voltage scenarios.

Maximum Non-Repetitive Peak Forward Current: 45 A

This high peak forward current capability makes the diode suitable for applications with potential surges, providing additional design safety.

Diode Element Material: SILICON

Silicon as the diode element material offers excellent electrical properties, ensuring reliable performance and thermal stability.

Technical Specifications

Diodes & Rectifiers STTA512FP attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE, SNUBBER DIODE

Application:

HIGH VOLTAGE ULTRA FAST SOFT RECOVERY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

2 V

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

45 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Recovery Time:

.095 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STTA512FP Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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