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STTA512F

STMicroelectronics

STTA512F by STMicroelectronics

STTA512F by STMicroelectronics is a single rectifier diode with 1200V peak reverse voltage and 5A output current. It has a fast 0.095us reverse recovery time, ideal for high voltage applications requiring ultra-fast soft recovery. The diode is designed in a rectangular flange mount package suitable for isolated case connections.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 12,762 parts In-Stock

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12,762

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Digiode

USA . 2,110 parts In-Stock

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2,110

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Anansix

USA . 1,109 parts In-Stock

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1,109

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J & M Industries LLC

USA . 300 parts In-Stock

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300

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 833 parts In-Stock

1+ parts

$0.022

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$0.020

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833

$0.022

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$0.020

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MKK Technologies

India . 1,504 parts In-Stock

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$0.042

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1,504

$0.042

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DigiPath Technology Company

USA . 1,504 parts In-Stock

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$0.042

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1,504

$0.042

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AZTECH Wire

Italy . 182 parts In-Stock

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$12.610

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182

$12.610

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Component Stockers USA

USA . 270 parts In-Stock

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$99.990

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270

$99.990

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A-Z Elektronik GmbH

Germany . 6,725 parts In-Stock

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6,725

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Corphita

USA . 1,377 parts In-Stock

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1,377

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Parana Technologies

USA . 146 parts In-Stock

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$0.026

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146

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$0.026

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Assy Fe

Spain . 18 parts In-Stock

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Overview

Discover the power and precision of the STTA512F by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers top-quality diodes and rectifiers for a variety of applications. With a focus on high voltage ultra-fast soft recovery, this product offers unmatched performance and reliability. Benefit from its maximum power dissipation of 13W and maximum repetitive peak reverse voltage of 1200V. Trust in the STTA512F to provide superior results in your projects while ensuring efficiency and safety. Choose STMicroelectronics for excellence in electronic components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials provide good insulation and protection for the diode, making it durable and long-lasting.

Maximum Reverse Recovery Time: 0.095 us

The ultra-fast reverse recovery time ensures efficient operation and quick response in high voltage applications.

Application: HIGH VOLTAGE ULTRA FAST SOFT RECOVERY

Designed for high voltage applications with ultra-fast soft recovery, providing reliable performance under demanding conditions.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can withstand elevated temperatures without compromising its functionality.

Maximum Power Dissipation: 13 W

The high power dissipation capability allows the diode to handle significant power loads without overheating.

Maximum Repetitive Peak Reverse Voltage: 1200 V

Capable of handling high reverse voltages, making it suitable for applications requiring robust performance in challenging environments.

Technical Specifications

Diodes & Rectifiers STTA512F attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE, SNUBBER DIODE

Application:

HIGH VOLTAGE ULTRA FAST SOFT RECOVERY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

2.2 V

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

45 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

13 W

Qualification:

Not Qualified

Reference Standard:

CECC

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Recovery Time:

.095 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

STTA512F Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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