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STDLED624

STMicroelectronics

STDLED624 by STMicroelectronics

STDLED624 by STMicroelectronics is a N-CHANNEL FET with 620V DS breakdown voltage, 14A pulsed drain current, and 100mJ avalanche energy rating. Ideal for power applications requiring a single configuration with built-in diode in a small outline package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,942 parts In-Stock

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3,942

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Anansix

USA . 2,221 parts In-Stock

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2,221

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Digiode

USA . 327 parts In-Stock

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327

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 51 parts In-Stock

1+ parts

$0.500

100+ parts

-

1k+ parts

$0.450

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51

$0.500

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$0.450

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MKK Technologies

India . 1,106 parts In-Stock

1+ parts

$0.941

100+ parts

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1,106

$0.941

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DigiPath Technology Company

USA . 1,106 parts In-Stock

1+ parts

$0.941

100+ parts

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1,106

$0.941

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Corphita

USA . 3,757 parts In-Stock

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3,757

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Parana Technologies

USA . 1,891 parts In-Stock

1+ parts

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$0.598

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1,891

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$0.598

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Overview

Revolutionize your power management with the STDLED624 from STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers top-quality Power Field Effect Transistors that are reliable and efficient. The N-CHANNEL configuration and built-in diode make this transistor perfect for a wide range of applications. With a maximum operating temperature of 150 °C and a minimum DS Breakdown Voltage of 620V, the STDLED624 offers exceptional performance and durability. Upgrade your electronic devices today with the STDLED624 and experience the difference in power management efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product easy to handle and reliable for long-term use.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have lower on-resistance and higher current-carrying capacity compared to P-channel FETs, making them efficient for various applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode helps protect the circuit from reverse voltage spikes, enhancing reliability and circuit protection.

Surface Mount: YES

Surface mount FETs are easier to handle and install on PCBs, saving space and enabling automated assembly processes.

Minimum DS Breakdown Voltage: 620 V

With a high breakdown voltage, this FET can handle high voltage applications with ease, ensuring reliable operation under heavy loads.

Maximum Pulsed Drain Current (IDM): 14 A

The high pulsed drain current rating allows the FET to handle surge currents effectively, making it suitable for applications with sudden power spikes.

Maximum Power Dissipation (Abs): 45 W

The high power dissipation capability ensures the FET can handle heat generated during operation, improving overall reliability.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows the FET to function in harsh environments without performance degradation, making it versatile for various applications.

Technical Specifications

Power Field Effect Transistors (FET) STDLED624 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Avalanche Energy Rating (EAS):

100 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

620 V

Maximum Drain Current (Abs) (ID):

4 A

Maximum Drain Current (ID):

4 A

Maximum Drain-Source On Resistance:

2.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

14 A

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Element Material:

SILICON

Trade Compliance

STDLED624 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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