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SMC30J170CA

STMicroelectronics

SMC30J170CA by STMicroelectronics

SMC30J170CA by STMicroelectronics is a bidirectional transient voltage suppressor diode ideal for protecting sensitive electronics. It features a max reverse power dissipation of 3000 W, breakdown voltage range of 190-210 V, and operates b/w -55 °C to 175 °C. This device ensures reliable performance in harsh environments, adhering to IEC standards.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,802 parts In-Stock

1+ parts

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2,802

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Digiode

USA . 1,397 parts In-Stock

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1,397

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Anansix

USA . 1,306 parts In-Stock

1+ parts

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1,306

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,004 parts In-Stock

1+ parts

$0.050

100+ parts

-

1k+ parts

$0.045

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2,004

$0.050

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$0.045

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MKK Technologies

India . 2,237 parts In-Stock

1+ parts

$0.093

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2,237

$0.093

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DigiPath Technology Company

USA . 2,237 parts In-Stock

1+ parts

$0.093

100+ parts

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2,237

$0.093

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AZTECH Wire

Italy . 585 parts In-Stock

1+ parts

$19.460

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585

$19.460

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Corphita

USA . 1,377 parts In-Stock

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1,377

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Parana Technologies

USA . 416 parts In-Stock

1+ parts

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100+ parts

$0.059

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416

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$0.059

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Overview

Unlock the full potential of your designs with the SMC30J170CA from STMicroelectronics, a leader in innovative technology. This exceptional transient suppression device offers superior protection against voltage spikes, ensuring reliability and longevity in demanding applications. With its robust build and cutting-edge avalanche technology, experience reduced downtime and enhanced performance across various sectors—from automotive to consumer electronics. Elevate your projects with trusted quality that stands up to the toughest challenges!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and reliability under various environmental conditions.

Config: SINGLE

Single configuration makes it easier to implement in various circuit designs without additional complexity.

Surface Mount: YES

Surface mount capability allows for efficient space-saving designs and facilitates automated assembly.

Maximum Non Repetitive Peak Reverse Power Dissipation: 3000 W

High power dissipation capability provides strong protection against transient spikes, enhancing circuit reliability.

Nominal Breakdown Voltage: 200 V

A nominal breakdown voltage of 200 V makes it suitable for a wide range of applications where voltage protection is required.

Maximum Reverse Current: 0.2 uA

Low reverse current ensures minimal power loss and improves energy efficiency in circuits.

Package Shape: RECTANGULAR

Rectangular package shape optimizes layout flexibility and ease of integration in circuit designs.

Reverse Test Voltage: 170 V

A reverse test voltage of 170 V allows for thorough testing and reliability assurance against voltage transients.

No. of Terminals: 2

Two terminals simplify connections and integration in circuit layouts.

Package Style (Meter): SMALL OUTLINE

Small outline package style offers compactness without compromising performance, ideal for space-constrained applications.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures functionality in harsh environments, enhancing the device's versatility.

Minimum Operating Temperature: -55 °C

The wide temperature range from -55 °C allows use in extreme conditions, making it reliable in various applications.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit design, accommodating different layout requirements.

Minimum Breakdown Voltage: 190 V

Minimum breakdown voltage of 190 V enhances protection capability for sensitive electronics.

Maximum Breakdown Voltage: 210 V

With a maximum breakdown voltage of 210 V, this device offers strong safeguarding against voltage spikes.

Reference Standard: IEC-61000-4-2, 4-4, 4-5; MIL-STD-750; MIL-STD-883

Complying with these standards ensures that the device meets rigorous performance and reliability criteria.

Diode Type: TRANS VOLUME SUPPRESSOR DIODE

As a Transient Voltage Suppressor diode, this product is specifically designed to protect sensitive components from voltage spikes.

Technology: AVALANCHE

Avalanche technology allows the diode to clamp transient voltages effectively, providing reliable circuit protection.

Terminal Form: C BEND

C bend terminal form enhances mechanical stability and solderability, ensuring secure connections.

Maximum Repetitive Peak Reverse Voltage: 170 V

A maximum repetitive peak reverse voltage of 170 V ensures the diode can handle significant transient events safely.

Polarity: BIDIRECTIONAL

Bidirectional polarity makes this device versatile for AC applications and provides protection in either direction.

Maximum Clamping Voltage: 275 V

A maximum clamping voltage of 275 V offers additional protection by limiting voltage levels during transient events.

Diode Element Material: SILICON

Silicon diode material provides excellent conduction properties and durability in transient suppression applications.

Technical Specifications

Transient Suppression Devices SMC30J170CA attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

210 V

Minimum Breakdown Voltage:

190 V

Nominal Breakdown Voltage:

200 V

Maximum Clamping Voltage:

275 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AB

JESD-30 Code:

R-PDSO-C2

Maximum Non Repetitive Peak Reverse Power Dissipation:

3000 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

BIDIRECTIONAL

Reference Standard:

IEC-61000-4-2, 4-4, 4-5; MIL-STD-750; MIL-STD-883

Maximum Repetitive Peak Reverse Voltage:

170 V

Maximum Reverse Current:

.2 uA

Reverse Test Voltage:

170 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SMC30J170CA Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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