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SMC30J16CA

STMicroelectronics

SMC30J16CA by STMicroelectronics

SMC30J16CA by STMicroelectronics is a single transient suppression device with 3000W peak power dissipation. It operates b/w -55 °C to 175°C, has a breakdown voltage of 17.8V, and uses avalanche technology. Ideal for protecting electronic circuits from voltage spikes in various applications.

Median Price

$0.477

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Avnet

USA . 7,500 parts In-Stock

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Vyrian

USA . 8,564 parts In-Stock

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8,564

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Anansix

USA . 515 parts In-Stock

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515

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Digiode

USA . 298 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 294 parts In-Stock

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Bristol Electronics

USA . 294 parts In-Stock

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$0.477

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$0.407

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294

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$0.477

$0.407

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Dan-Mar Components

USA . 294 parts In-Stock

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294

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 966 parts In-Stock

1+ parts

$0.061

100+ parts

-

1k+ parts

$0.055

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966

$0.061

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$0.055

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MKK Technologies

India . 274 parts In-Stock

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$0.114

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274

$0.114

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DigiPath Technology Company

USA . 274 parts In-Stock

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$0.114

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274

$0.114

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Ampacity Inc.

Singapore . 291 parts In-Stock

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$1.010

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Component Stockers USA

USA . 20,069 parts In-Stock

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$6.260

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20,069

$6.260

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AZTECH Wire

Italy . 674 parts In-Stock

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$19.190

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674

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Metaverse IC Inc.

Canada . 44,590 parts In-Stock

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Corphita

USA . 4,832 parts In-Stock

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4,832

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Parana Technologies

USA . 768 parts In-Stock

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$0.073

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768

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$0.073

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Overview

Looking for reliable transient suppression devices? Look no further than the SMC30J16CA by STMicroelectronics. With a maximum non-repetitive peak reverse power dissipation of 3000W, this diode offers top-notch quality and performance. Ideal for a wide range of applications, this product ensures protection against voltage spikes and surges. Trust in STMicroelectronics' reputation for excellence and choose the SMC30J16CA for peace of mind and superior protection.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the device, making it suitable for various environments.

Config: SINGLE

Simplified design with a single configuration for easy installation and maintenance.

Surface Mount: YES

Convenient surface mount option for efficient PCB assembly and space-saving installation.

Maximum Non Repetitive Peak Reverse Power Dissipation: 3000 W

High power dissipation capability ensures reliable protection against transient voltage spikes.

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration and placement within electronic circuits or systems.

No. of Terminals: 2

Simplified two-terminal connection for straightforward installation and use.

Package Style (Meter): SMALL OUTLINE

Compact small outline package style saves space and facilitates efficient PCB layout.

Maximum Operating Temperature: 175 °C

Wide operating temperature range ensures performance in various environmental conditions.

Minimum Operating Temperature: -55 °C

Operational reliability even in low-temperature environments for versatile applications.

Terminal Finish: MATTE TIN

Matte tin finish provides good electrical conductivity and corrosion resistance for long-term reliability.

Terminal Position: DUAL

Dual terminal position allows for flexible mounting and connectivity options.

Minimum Breakdown Voltage: 17.8 V

Precise minimum breakdown voltage specification ensures effective protection against voltage surges.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability for robust soldering and assembly processes.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specific diode type designed for transient voltage suppression applications, ensuring effective protection.

Technology: AVALANCHE

Avalanche technology provides reliable and rapid response to transient overvoltage events for enhanced protection.

Terminal Form: C BEND

C bend terminal form for secure and stable connection during installation.

Maximum Repetitive Peak Reverse Voltage: 16 V

High maximum repetitive peak reverse voltage rating for sustained protection against voltage spikes.

Polarity: BIDIRECTIONAL

Bidirectional polarity allows for protection against voltage spikes in both directions.

Diode Element Material: SILICON

Silicon diode element material for excellent performance and reliability in transient suppression applications.

Technical Specifications

Transient Suppression Devices SMC30J16CA attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Minimum Breakdown Voltage:

17.8 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AB

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

3000 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Maximum Repetitive Peak Reverse Voltage:

16 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

SMC30J16CA Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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