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SMC30J154CA

STMicroelectronics

SMC30J154CA by STMicroelectronics

SMC30J154CA by STMicroelectronics is a bidirectional transient voltage suppressor diode ideal for protecting sensitive electronics. It features a max reverse power dissipation of 3000 W, breakdown voltage range of 171-189 V, and operates b/w -55 °C to 175 °C. This device ensures reliable performance in various applications, adhering to IEC standards.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,214 parts In-Stock

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4,214

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Digiode

USA . 1,791 parts In-Stock

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1,791

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Anansix

USA . 1,266 parts In-Stock

1+ parts

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1,266

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 349 parts In-Stock

1+ parts

$0.110

100+ parts

-

1k+ parts

$0.099

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349

$0.110

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$0.099

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MKK Technologies

India . 1,303 parts In-Stock

1+ parts

$0.208

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1,303

$0.208

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DigiPath Technology Company

USA . 1,303 parts In-Stock

1+ parts

$0.208

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1,303

$0.208

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AZTECH Wire

Italy . 642 parts In-Stock

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$13.370

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642

$13.370

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Parana Technologies

USA . 2,324 parts In-Stock

1+ parts

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$0.132

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2,324

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$0.132

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Corphita

USA . 1,287 parts In-Stock

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1,287

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Overview

Elevate your designs with the SMC30J154CA from STMicroelectronics, a leader in innovative semiconductor solutions. This robust transient suppression device offers unrivaled protection against voltage spikes, ensuring the longevity and reliability of your electronic systems. Its compact surface mount design makes it ideal for a wide range of applications, from consumer electronics to industrial machinery. Trust STMicroelectronics for quality and performance that empowers your projects while safeguarding them from unwanted surges.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to environmental factors, making this device suitable for a variety of applications.

Config: SINGLE

A single configuration simplifies integration into circuits, providing ease of use and reducing design complexity.

Surface Mount: YES

Surface mount technology allows for efficient use of PCB space and enables automated assembly, enhancing manufacturing productivity.

Maximum Non Repetitive Peak Reverse Power Dissipation: 3000 W

A high power dissipation capability allows this device to handle large transient events without damage, ensuring better protection.

Nominal Breakdown Voltage: 180 V

The nominal breakdown voltage provides reliable voltage clamping performance, safeguarding sensitive components from voltage spikes.

Maximum Reverse Current: 0.2 µA

This low reverse current indicates minimal leakage, contributing to the overall efficiency and reliability of the circuit.

Package Shape: RECTANGULAR

The rectangular shape is optimal for various PCB layouts, facilitating efficient space utilization in compact designs.

Reverse Test Voltage: 154 V

This test voltage ensures the device can withstand voltages that are common in transient events, improving overall circuit robustness.

No. of Terminals: 2

The simplicity of a two-terminal device aids in easy connection and installation in various circuit applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for more compact device placement on PCBs, ideal for space-constrained applications.

Maximum Operating Temperature: 175 °C

The high operating temperature rating ensures reliable performance in demanding environments, making it suitable for industrial applications.

Minimum Operating Temperature: -55 °C

The ability to function in low temperatures ensures versatility and reliability in harsh climatic conditions.

Terminal Position: DUAL

The dual terminal position allows for flexible mounting options, which can be advantageous in specific design scenarios.

Minimum Breakdown Voltage: 171 V

This minimum value ensures timely protection for sensitive components, maintaining circuit integrity.

Maximum Breakdown Voltage: 189 V

This upper limit allows the device to handle unexpected voltage spikes while providing reliable suppression.

Reference Standard: IEC-61000-4-2, 4-4, 4-5; MIL-STD-750; MIL-STD-883

Adherence to these standards signifies high quality and reliability, making this product suitable for compliance-critical applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

As a transient voltage suppressor, this diode is designed explicitly to handle voltage spikes, ensuring maximum protection in transient scenarios.

Technology: AVALANCHE

Avalanche technology provides a rapid response to voltage spikes, increasing the effectiveness of transient suppression.

Terminal Form: C BEND

The C bend terminal form facilitates easy mounting and soldering processes, enhancing the assembly efficiency.

Maximum Repetitive Peak Reverse Voltage: 154 V

This rating allows for reliable performance under repeated transient conditions, providing confident protection for circuits.

Polarity: BIDIRECTIONAL

Bidirectional operation allows for protection of AC circuits, making it versatile for different applications.

Maximum Clamping Voltage: 246 V

A high clamping voltage ensures that any transient spikes do not exceed safe levels for sensitive components, further protecting the circuit.

Diode Element Material: SILICON

Silicon material enhances reliability and performance characteristics, making it an industry-standard choice for transient suppression devices.

Technical Specifications

Transient Suppression Devices SMC30J154CA attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

189 V

Minimum Breakdown Voltage:

171 V

Nominal Breakdown Voltage:

180 V

Maximum Clamping Voltage:

246 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AB

JESD-30 Code:

R-PDSO-C2

Maximum Non Repetitive Peak Reverse Power Dissipation:

3000 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

BIDIRECTIONAL

Reference Standard:

IEC-61000-4-2, 4-4, 4-5; MIL-STD-750; MIL-STD-883

Maximum Repetitive Peak Reverse Voltage:

154 V

Maximum Reverse Current:

.2 uA

Reverse Test Voltage:

154 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SMC30J154CA Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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