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SCTWA35N65G2V4AG

STMicroelectronics

SCTWA35N65G2V4AG by STMicroelectronics

SCTWA35N65G2V4AG by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 650V breakdown voltage, 45A max drain current, and operates up to 200 °C. Ideal for high-power circuits, it ensures reliable performance with low on-resistance.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,467 parts In-Stock

1+ parts

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3,467

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Digiode

USA . 2,720 parts In-Stock

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2,720

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Anansix

USA . 1,995 parts In-Stock

1+ parts

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1,995

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 929 parts In-Stock

1+ parts

$0.856

100+ parts

-

1k+ parts

$0.770

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929

$0.856

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$0.770

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MKK Technologies

India . 1,276 parts In-Stock

1+ parts

$1.609

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1,276

$1.609

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DigiPath Technology Company

USA . 1,276 parts In-Stock

1+ parts

$1.609

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1,276

$1.609

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Parana Technologies

USA . 2,112 parts In-Stock

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$1.023

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2,112

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$1.023

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Corphita

USA . 801 parts In-Stock

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801

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Overview

Unlock unparalleled performance with the SCTWA35N65G2V4AG N-channel power FET from STMicroelectronics, a global leader in semiconductor technology. Designed for optimal efficiency and reliability, this switching transistor excels in demanding applications like industrial automation and renewable energy systems. With its robust construction and superior thermal management, it ensures longevity and resilience, delivering exceptional value while driving your innovations forward. Experience the difference of quality you can trust!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight, the plastic/epoxy body material contributes to the reliability of the product in various environmental conditions.

Polarity or Channel Type: N-CHANNEL

N-channel FETs are commonly used in power applications due to their higher efficiency and better performance than P-channel devices.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode enhances the device's functionality, allowing for easier integration in circuits where reverse current protection is needed.

Transistor Application: SWITCHING

Designed for switching applications, it provides fast switching speeds, making it suitable for modern power management systems.

Minimum DS Breakdown Voltage: 650 V

With a high breakdown voltage, this FET is ideal for applications that require high voltage handling, ensuring durability and safety.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient space utilization in PCB design, facilitating high-density layouts.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides robust mechanical stability and excellent performance in high-power applications.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for greater control over the device, making it efficient in applications requiring precise modulation.

Maximum Pulsed Drain Current (IDM): 90 A

This high pulsed drain current capability enables the FET to handle transient loads, making it versatile for demanding applications.

No. of Terminals: 4

The four-terminal configuration simplifies circuit integration, enhancing performance and reliability in design.

Maximum Power Dissipation (Abs): 240 W

A high power dissipation rating signifies that this FET can handle substantial power levels without overheating, ensuring long-term performance.

Package Style (Meter): FLANGE MOUNT

Flange mount style provides excellent thermal conductivity and secure mounting options, essential for high-power applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Using MOS technology, this FET offers lower power consumption and higher efficiency compared to conventional devices.

Maximum Operating Temperature: 200 °C

A high maximum operating temperature allows this FET to perform effectively in harsh environments, increasing its applicability.

Transistor Element Material: SILICON CARBIDE

Silicon carbide enhances thermal conductivity and breakdown voltage, making it suitable for high-efficiency power devices.

Minimum Operating Temperature: -55 °C

This wide operating temperature range enables its use in extreme environments, making it ideal for automotive and industrial applications.

Maximum Drain Current (ID): 45 A

A maximum drain current rating of 45 A allows this FET to be used in various high-current applications, ensuring reliability.

Maximum Drain-Source On Resistance: 0.067 ohm

Low on-resistance leads to reduced power losses during operation, enhancing overall efficiency and performance.

Terminal Position: SINGLE

The single terminal position simplifies circuit design and layout, making it easier for engineers to implement in their applications.

Case Connection: DRAIN

Direct drain connection enhances performance by ensuring minimal resistance in the circuit path, leading to improved efficiency.

Maximum Feedback Capacitance (Crss): 30 pF

Low feedback capacitance reduces the potential for signal degradation, ensuring better performance in high-speed applications.

Reference Standard: AEC-Q101

Meeting the AEC-Q101 standard signifies that this FET is suitable for automotive applications, ensuring high reliability and performance.

Technical Specifications

Power Field Effect Transistors (FET) SCTWA35N65G2V4AG attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

650 V

Maximum Drain Current (ID):

45 A

Maximum Drain-Source On Resistance:

.067 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

30 pF

JESD-30 Code:

R-PSFM-T4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

90 A

Reference Standard:

AEC-Q101

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON CARBIDE

Trade Compliance

SCTWA35N65G2V4AG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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