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M95320-BN3G

STMicroelectronics

M95320-BN3G by STMicroelectronics

M95320-BN3G from STMicroelectronics is a 4Kx8 EEPROM with a max clock frequency of 20 MHz and operates in synchronous mode. It features hardware/software write protection and endures up to 1M write/erase cycles, making it ideal for automotive applications. With a wide temp range (-40 °C to 125 °C), it ensures reliability in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,870 parts In-Stock

1+ parts

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3,870

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Digiode

USA . 1,392 parts In-Stock

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1,392

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Anansix

USA . 1,089 parts In-Stock

1+ parts

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1,089

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,149 parts In-Stock

1+ parts

$2.923

100+ parts

-

1k+ parts

$2.631

10k+ parts

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1,149

$2.923

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$2.631

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MKK Technologies

India . 1,139 parts In-Stock

1+ parts

$5.496

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1,139

$5.496

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DigiPath Technology Company

USA . 1,139 parts In-Stock

1+ parts

$5.496

100+ parts

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1,139

$5.496

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Corphita

USA . 1,881 parts In-Stock

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1,881

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Parana Technologies

USA . 686 parts In-Stock

1+ parts

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100+ parts

$3.495

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686

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$3.495

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Overview

Unlock the potential of your projects with the M95320-BN3G EEPROM from STMicroelectronics, a trusted leader in innovative semiconductor solutions. This high-performance memory device offers exceptional reliability and stability, suited for automotive and industrial applications where quality is paramount. With robust write protection and impressive endurance, it ensures data security and longevity, ultimately delivering peace of mind and efficiency to your designs. Choose M95320-BN3G for unmatched value and performance!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy materials provides durability and resistance to environmental stress, making it suitable for automotive applications.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient use of PCB space, fitting into a variety of design layouts.

Operating Mode: SYNCHRONOUS

Synchronous operation enhances performance by allowing simultaneous read/write processes, thus improving data throughput.

Nominal Supply Voltage / Vsup: 5 V

A nominal supply voltage of 5V is compatible with many standard electronic systems, ensuring easy integration.

Power Supplies (V): 5

Supports standard power supplies, simplifying circuit design and reducing component costs.

No. of Terminals: 8

With 8 terminals, this product remains compact while providing necessary connections for efficient operation.

Package Style (Meter): IN-LINE

The in-line package style facilitates easy mounting on PCBs, contributing to design versatility.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature ensures reliability in harsh environments often found in automotive applications.

Organization: 4KX8

This organization allows efficient use of memory, suitable for a variety of data storage needs.

Minimum Operating Temperature: -40 °C

A wide temperature range ensures functionality in extreme conditions, critical for automotive and industrial use.

Terminal Finish: MATTE TIN

Matte tin finish improves solderability and reduces oxidation, ensuring reliable electrical connections over time.

Terminal Position: DUAL

Dual terminal positioning enhances stability and ease of installation in PCBs.

Write Protection: HARDWARE/SOFTWARE

Dual write protection options enhance data integrity, making it suitable for critical applications.

Maximum Seated Height: 5.33 mm

Low seated height helps in maintaining a compact profile on the PCB without compromising performance.

Maximum Clock Frequency (fCLK): 20 MHz

A high clock frequency supports fast data transfer rates, improving overall system efficiency.

Width: 7.62 mm

Compact width allows for denser PCB layouts, enabling the design of smaller electronic devices.

Minimum Supply Voltage (Vsup): 4.5 V

This flexibility in supply voltage allows for compatibility with slightly varied power sources.

Length: 9.27 mm

Short length aids in optimizing PCB real estate while maintaining performance.

Temperature Grade: AUTOMOTIVE

Designed for automotive applications, this specification ensures enhanced reliability and longevity in vehicles.

Technology: CMOS

CMOS technology provides low power consumption and high speed, making it a suitable choice for modern electronics.

Parallel or Serial: SERIAL

Serial communication simplifies routing on PCBs and reduces pin count, minimizing complexity.

Terminal Form: THROUGH-HOLE

Through-hole configuration offers robust mechanical support, ideal for demanding environments.

Maximum Supply Current: 4 mA

Low supply current enhances energy efficiency, making it suitable for battery-operated devices.

No. of Words: 4096 words

With 4096 words, this EEPROM provides ample space for a range of data storage applications.

Memory Width: 8

An 8-bit memory width enables efficient handling of standard data formats, enhancing compatibility.

Minimum Data Retention Time: 40

A long data retention time ensures data integrity during power loss, crucial for saving critical information.

Terminal Pitch: 2.54 mm

Standard terminal pitch eases breadboarding and soldering, allowing for quick prototyping.

No. of Words Code: 4K

Efficient coding with 4K words allows effective memory management for various applications.

Maximum Supply Voltage (Vsup): 5.5 V

The ability to operate up to 5.5V provides flexibility in power management in diverse systems.

Endurance: 1000000 Write/Erase Cycles

High endurance rating guarantees long-term reliability, making it ideal for applications with frequent changes in data.

Serial Bus Type: SPI

SPI interface facilitates simple and efficient data communication, enhancing overall system performance.

Maximum Write Cycle Time (tWC): 5 ms

Fast write cycles streamline data processing, improving efficiency in systems requiring rapid updates.

Memory Density: 32768 bit

The high memory density provides substantial storage capability in a compact form factor.

Memory IC Type: EEPROM

As an EEPROM, it allows for non-volatile data storage, retaining information without power.

Maximum Standby Current: 0.000005 Amp

Extremely low standby current reduces power consumption, ideal for energy-sensitive applications.

Technical Specifications

EEPROM M95320-BN3G attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Additional Features:

1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION

Maximum Clock Frequency (fCLK):

20 MHz

Minimum Data Retention Time:

40

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e3

Length:

9.27 mm

Memory Density:

32768 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

4096 words

No. of Words Code:

4K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

SERIAL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.33 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.000005 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

4 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

M95320-BN3G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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