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M95320-BN6G

STMicroelectronics

M95320-BN6G by STMicroelectronics

M95320-BN6G from STMicroelectronics is a 4Kx8 EEPROM with a 5V supply, ideal for industrial applications. It features a max clock frequency of 20 MHz and supports hardware/software write protection. Operating b/w -40 °C to 85 °C ensures reliability in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,462 parts In-Stock

1+ parts

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3,462

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Vyrian

USA . 3,304 parts In-Stock

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3,304

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Anansix

USA . 2,366 parts In-Stock

1+ parts

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2,366

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,599 parts In-Stock

1+ parts

$4.214

100+ parts

-

1k+ parts

$3.792

10k+ parts

-

1,599

$4.214

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$3.792

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MKK Technologies

India . 760 parts In-Stock

1+ parts

$7.923

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760

$7.923

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DigiPath Technology Company

USA . 760 parts In-Stock

1+ parts

$7.923

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760

$7.923

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Corphita

USA . 4,051 parts In-Stock

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4,051

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Parana Technologies

USA . 126 parts In-Stock

1+ parts

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$5.038

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126

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$5.038

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Overview

Unlock unparalleled performance with the M95320-BN6G EEPROM from STMicroelectronics, a leader in innovative semiconductor solutions. Engineered for reliability, this memory component excels in industrial applications, offering robust write protection and exceptional endurance—perfect for critical data storage. Enjoy peace of mind with its wide temperature range and low power consumption, ensuring your projects run smoothly and efficiently. Elevate your designs with ST’s commitment to quality and innovation!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures reliability and longevity, making this EEPROM suitable for various applications.

Package Shape: RECTANGULAR

The rectangular package shape optimizes PCB space and allows for easy integration into designs.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfer rates, enhancing overall performance in applications.

Nominal Supply Voltage / Vsup: 5 V

Operating at a standard 5V supply makes this EEPROM compatible with a wide range of electronic systems.

Power Supplies (V): 5

Single power supply requirement simplifies circuit design, reducing component count and potential points of failure.

No. of Terminals: 8

The compact 8-terminal design conserves PCB space while providing all necessary connections for functionality.

Package Style (Meter): IN-LINE

The in-line package style is well-suited for mass production and automated assembly processes.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this EEPROM is suitable for industrial applications where heat is a factor.

Organization: 4KX8

The 4Kx8 organization allows efficient data storage and retrieval, making it effective for memory-intensive applications.

Minimum Operating Temperature: -40 °C

The wide temperature range makes this EEPROM ideal for use in harsh environments.

Terminal Finish: MATTE TIN

Matte tin terminal finish enhances solderability and ensures reliable connections during assembly.

Terminal Position: DUAL

Dual terminal positioning ensures versatility in mounting and simplifies board layout.

Write Protection: HARDWARE/SOFTWARE

Flexible write protection options enhance data security, critical for sensitive applications.

Maximum Seated Height: 5.33 mm

Low profile helps in creating compact designs, saving space on crowded PCBs.

Maximum Clock Frequency (fCLK): 20 MHz

High clock frequency supports fast read/write operations, improving system performance.

Width: 7.62 mm

Compact width allows for efficient use of board space while maintaining performance.

Minimum Supply Voltage (Vsup): 4.5 V

This ensures compatibility with various power supply configurations in different applications.

Length: 9.27 mm

Short length supports compact designs which are crucial in space-constrained applications.

Temperature Grade: INDUSTRIAL

Designed for industrial applications, ensuring robustness and reliability in demanding environments.

Technology: CMOS

CMOS technology provides low power consumption and high efficiency, ideal for battery-operated devices.

Parallel or Serial: SERIAL

Serial communication reduces pin count and simplifies connections for easier integration.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections and are easier to solder in prototype applications.

Maximum Supply Current: 4 mA

Low supply current improves energy efficiency, prolonging battery life in portable devices.

No. of Words: 4096 words

The ability to store 4096 words makes it versatile for various applications requiring substantial data storage.

Memory Width: 8

An 8-bit memory width allows for efficient data management in many common applications.

Minimum Data Retention Time: 40 years

Long data retention ensures reliability, making it suitable for long-term storage applications.

Terminal Pitch: 2.54 mm

Standard terminal pitch simplifies PCB layout and compatibility with existing designs.

No. of Words Code: 4K

With a 4K word storage capacity, it meets the needs of various embedded applications requiring moderate storage.

Maximum Supply Voltage (Vsup): 5.5 V

Support for up to 5.5V allows use in systems with slightly higher voltage requirements without compromising functionality.

Endurance: 1,000,000 Write/Erase Cycles

High endurance ensures durability in applications where frequent data updates are necessary, enhancing reliability.

Serial Bus Type: SPI

SPI bus compatibility allows for seamless integration with modern microcontrollers, offering versatile communication options.

Maximum Write Cycle Time (tWC): 5 ms

Fast write cycle time improves efficiency in applications requiring quick data updates.

Memory Density: 32768 bit

Adequate memory density allows for sufficient data storage in a compact footprint.

Memory IC Type: EEPROM

As an EEPROM, it provides non-volatile memory, ensuring data retention without power.

Maximum Standby Current: 0.000005 Amp

Ultra-low standby current minimizes power consumption in sleep modes, extending battery life in portable devices.

Technical Specifications

EEPROM M95320-BN6G attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Additional Features:

1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION

Maximum Clock Frequency (fCLK):

20 MHz

Minimum Data Retention Time:

40

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e3

Length:

9.27 mm

Memory Density:

32768 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

4096 words

No. of Words Code:

4K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

SERIAL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.33 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.000005 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

4 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

M95320-BN6G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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