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M34D04-WMN6TP

STMicroelectronics

M34D04-WMN6TP by STMicroelectronics

M34D04-WMN6TP by STMicroelectronics is an EEPROM with 512x8 organization, 4096-bit memory density, and 1000000 write/erase cycles endurance. It operates at temperatures ranging from -40 to 85 °C and uses I2C serial bus for control. Ideal for industrial applications requiring reliable non-volatile memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,419 parts In-Stock

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3,419

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Anansix

USA . 2,814 parts In-Stock

1+ parts

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2,814

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Vyrian

USA . 67 parts In-Stock

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67

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 55 parts In-Stock

1+ parts

$3.134

100+ parts

-

1k+ parts

$2.821

10k+ parts

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55

$3.134

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$2.821

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MKK Technologies

India . 573 parts In-Stock

1+ parts

$5.894

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573

$5.894

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DigiPath Technology Company

USA . 573 parts In-Stock

1+ parts

$5.894

100+ parts

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573

$5.894

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Corphita

USA . 3,803 parts In-Stock

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3,803

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Parana Technologies

USA . 2,371 parts In-Stock

1+ parts

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100+ parts

$3.748

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2,371

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$3.748

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Overview

Unlock the power of reliable data storage with the M34D04-WMN6TP EEPROM from STMicroelectronics. Trusted by industry leaders, this small outline package with a dual terminal position offers unmatched durability with a million write/erase cycles and industrial-grade temperature tolerance. Ideal for a wide range of applications, this serial I2C memory IC provides 512 words of high-quality storage with hardware write protection for added security. Experience peace of mind knowing your valuable data is safe and easily accessible with the M34D04-WMN6TP.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring longevity and reliability.

Surface Mount: YES

Allows for easy installation on circuit boards, saving space and simplifying the manufacturing process.

Power Supplies (V): 3/5

Compatible with a range of standard power supplies, offering flexibility in usage.

No. of Terminals: 8

Provides sufficient connectivity options for interfacing with other components in a system.

Package Style (Meter): SMALL OUTLINE

Compact design saves space on the circuit board, ideal for applications with limited space.

Maximum Operating Temperature: 85 °C

Suitable for industrial environments where higher temperatures may be present, ensuring reliable operation.

Organization: 512X8

Offers a good balance of storage capacity and data organization for a variety of applications.

Minimum Operating Temperature: -40 °C

Can operate in low-temperature environments without any issues, suitable for a wide range of conditions.

Terminal Finish: NICKEL PALLADIUM GOLD

Provides excellent conductivity and corrosion resistance for long-term performance.

I2C Control Byte: 1010DDMR

Specific control byte for I2C communication, ensuring compatibility with I2C protocols.

Terminal Position: DUAL

Dual terminal position allows for versatile installation options, enhancing flexibility in system design.

Write Protection: HARDWARE

Hardware-based write protection enhances the security of data stored in the EEPROM.

Temperature Grade: INDUSTRIAL

Designed to withstand the harsh conditions of industrial environments, ensuring reliable performance.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, ideal for energy-efficient applications.

Parallel or Serial: SERIAL

Serial communication allows for simpler interface with other digital systems, improving integration.

Terminal Form: GULL WING

Gull wing terminal form provides ease of soldering during assembly, ensuring secure connections.

Maximum Supply Current: 1 mA

Low maximum supply current helps in reducing power consumption, ideal for battery-operated devices.

Memory Density: 4096 bit

Offers a good balance between storage capacity and memory organization for various applications.

Memory IC Type: EEPROM

EEPROM memory technology allows for non-volatile data storage, retaining information even when power is removed.

Maximum Standby Current: 0.0000005 Amp

Extremely low standby current consumption helps in conserving power when the device is idle.

Technical Specifications

EEPROM M34D04-WMN6TP attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Minimum Data Retention Time:

40

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDMR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

8

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Power Supplies (V):

3/5

Qualification:

Not Qualified

Serial Bus Type:

I2C

Maximum Standby Current:

.0000005 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

1 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Write Protection:

HARDWARE

Trade Compliance

M34D04-WMN6TP Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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