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M34D04-WMN6

STMicroelectronics

M34D04-WMN6 by STMicroelectronics

M34D04-WMN6 by STMicroelectronics is an EEPROM with 512x8 organization, 4096-bit memory density, and 1000000 write/erase cycles endurance. It operates at temperatures ranging from -40 to 85 °C and uses I2C serial bus for control, making it ideal for industrial applications requiring reliable non-volatile memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,977 parts In-Stock

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1,977

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Anansix

USA . 1,174 parts In-Stock

1+ parts

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1,174

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Digiode

USA . 759 parts In-Stock

1+ parts

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759

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 770 parts In-Stock

1+ parts

$5.203

100+ parts

-

1k+ parts

$4.682

10k+ parts

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770

$5.203

-

$4.682

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MKK Technologies

India . 340 parts In-Stock

1+ parts

$9.783

100+ parts

-

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340

$9.783

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DigiPath Technology Company

USA . 340 parts In-Stock

1+ parts

$9.783

100+ parts

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340

$9.783

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Corphita

USA . 4,551 parts In-Stock

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4,551

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Parana Technologies

USA . 1,406 parts In-Stock

1+ parts

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$6.220

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1,406

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$6.220

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Overview

Unlock the potential of your electronic devices with the M34D04-WMN6 EEPROM by STMicroelectronics. Experience unmatched quality and reliability from a reputable manufacturer, ensuring optimal performance in industrial applications. With a compact package design and easy surface mount installation, this EEPROM offers seamless integration and versatile usage. Benefit from its high endurance and low power consumption, providing long-lasting data storage and efficient operation. Upgrade your systems with the M34D04-WMN6 for enhanced functionality and reliability in a wide range of electronic devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, making it ideal for various applications.

Surface Mount: YES

Being surface mountable allows for easy and compact integration onto circuit boards, saving space and simplifying assembly processes.

Power Supplies (V): 3/5

Compatibility with both 3V and 5V power supplies provides flexibility in different system configurations.

No. of Terminals: 8

Having 8 terminals allows for connectivity with other components and systems, enabling efficient data exchange.

Package Style (Meter): SMALL OUTLINE

The small outline package style makes the product suitable for compact electronic devices where space is limited.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature ensures reliable performance even in harsh environmental conditions.

Organization: 512X8

The 512X8 organization provides ample storage capacity and efficient data organization for various applications.

Minimum Operating Temperature: -40 °C

With a low minimum operating temperature, the product can be used in a wide range of temperature environments.

Terminal Finish: TIN LEAD

The use of tin lead terminal finish ensures good electrical conductivity and solderability for reliable connections.

I2C Control Byte: 1010DDMR

The I2C control byte provides a standardized communication protocol for easy interfacing with other devices in a system.

Write Protection: HARDWARE

Hardware write protection feature enhances data security by preventing unauthorized write access to the memory.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature tolerance makes the product suitable for rugged industrial applications.

Technology: CMOS

CMOS technology offers low power consumption and high reliability, enhancing the efficiency and longevity of the product.

Parallel or Serial: SERIAL

Serial interface allows for sequential data transfer, simplifying communication and data handling processes.

No. of Words: 512 words

The 512 words capacity provides sufficient storage for data storage and retrieval in various applications.

Memory Width: 8

An 8-bit memory width allows for efficient data processing and storage capabilities.

Minimum Data Retention Time: 40

With a minimum data retention time of 40, the product ensures data integrity and reliability over extended periods.

Terminal Pitch: 1.27 mm

A terminal pitch of 1.27mm enables precise and secure connections, facilitating smooth operation and maintenance.

No. of Words Code: 512

The 512 words code capacity ensures sufficient memory space for storing and accessing data efficiently.

Endurance: 1000000 Write/Erase Cycles

High endurance of 1,000,000 write/erase cycles guarantees long-term reliability and durability for frequent data updates.

Serial Bus Type: I2C

The I2C serial bus type offers a simple and efficient communication interface for connecting with other devices in a system.

Memory Density: 4096 bit

The 4096-bit memory density provides ample storage capacity for storing data and programs in a compact form factor.

Memory IC Type: EEPROM

Being an EEPROM memory IC type, the product offers non-volatile memory storage with easy read/write capabilities for data retention.

Maximum Standby Current: 0.0000005 Amp

The ultra-low maximum standby current ensures minimal power consumption during idle periods, prolonging battery life and energy efficiency.

Technical Specifications

EEPROM M34D04-WMN6 attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Minimum Data Retention Time:

40

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDMR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

8

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Power Supplies (V):

3/5

Qualification:

Not Qualified

Serial Bus Type:

I2C

Maximum Standby Current:

.0000005 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

1 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Write Protection:

HARDWARE

Trade Compliance

M34D04-WMN6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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