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M24LR64E-RUW20/2

STMicroelectronics

M24LR64E-RUW20/2 by STMicroelectronics

M24LR64E-RUW20/2 by STMicroelectronics is a 64Kb EEPROM with AEC-Q100 screening, ideal for automotive applications. It operates at a nominal voltage of 2.5V and features I2C serial communication with a max clock frequency of 400kHz. This chip ensures reliable data retention for critical systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,488 parts In-Stock

1+ parts

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4,488

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Digiode

USA . 3,566 parts In-Stock

1+ parts

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3,566

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Anansix

USA . 511 parts In-Stock

1+ parts

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511

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 134 parts In-Stock

1+ parts

$2.317

100+ parts

-

1k+ parts

$2.085

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134

$2.317

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$2.085

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MKK Technologies

India . 339 parts In-Stock

1+ parts

$4.356

100+ parts

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339

$4.356

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DigiPath Technology Company

USA . 339 parts In-Stock

1+ parts

$4.356

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339

$4.356

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Corphita

USA . 544 parts In-Stock

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544

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Parana Technologies

USA . 503 parts In-Stock

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$2.770

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503

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$2.770

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Overview

Unlock the potential of your designs with the M24LR64E-RUW20/2 EEPROM from STMicroelectronics. Renowned for their quality and innovation, STMicroelectronics delivers this versatile memory solution ideal for automotive, industrial, and IoT applications. With its robust performance and reliability, this EEPROM ensures efficient data storage and fast access times, empowering your projects with enhanced functionality and longevity while minimizing power consumption. Elevate your developments today!

Feature Benefit Bullets

Surface Mount: YES

Surface mount capability allows for easy integration into compact and modern electronic designs, saving space on printed circuit boards.

Screening Level: AEC-Q100

Meets AEC-Q100 certification, making it suitable for automotive applications where reliability and quality are crucial.

Operating Mode: SYNCHRONOUS

Synchronous operation enhances data transfer efficiency, providing faster access and improved performance.

Nominal Supply Voltage / Vsup: 2.5 V

Operating at 2.5 V ensures energy efficiency, making it ideal for battery-operated devices.

Package Style (Meter): UNCASED CHIP

Uncased chip form factor allows for custom packaging solutions and flexibility in design.

Alternate Memory Width: 8

Supports an alternate memory width, facilitating compatibility with various system architectures.

Organization: 2KX32

The 2Kx32 organization provides ample storage capacity for applications requiring moderate memory size.

Terminal Position: UPPER

Upper terminal positioning optimizes space and routing on the PCB, enhancing design efficiency.

No. of Ports: 2

Two ports allow for improved data handling and simultaneous access, boosting overall system throughput.

Maximum Clock Frequency (fCLK): 0.4 MHz

A maximum clock frequency of 0.4 MHz supports reliable operations for applications with moderate speed requirements.

Minimum Supply Voltage (Vsup): 1.8 V

The minimum supply voltage of 1.8 V allows compatibility with a wider range of low-power systems.

Programming Voltage: 2.5 V

Consistent programming voltage of 2.5 V simplifies circuit design and ensures stable programming conditions.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity, which are essential for reliable operation.

Parallel or Serial: SERIAL

Serial communication interface simplifies wiring and reduces pin count, making it ideal for compact applications.

Terminal Form: NO LEAD

No-lead terminals contribute to a smaller footprint and minimize interference in densely packed circuits.

Maximum Supply Current: 0.04 mA

Low maximum supply current enhances overall energy efficiency, benefiting battery life in portable applications.

No. of Words: 2048 words

With 2048 words, it provides ample memory for various applications, especially in embedded systems.

Memory Width: 32

A memory width of 32 bits allows for optimized data handling, suitable for complex computations.

Minimum Data Retention Time: 40 years

Long data retention time ensures reliability and stability for critical data storage applications.

No. of Words Code: 2K

The 2K words code further enhances memory structure, catering to specific coding needs in systems.

Maximum Supply Voltage (Vsup): 5.5 V

A maximum supply voltage of 5.5 V offers flexibility in design, accommodating various power levels.

Serial Bus Type: I2C

I2C bus support simplifies communication with microcontrollers and diminishes wiring complexity in multi-device setups.

Maximum Write Cycle Time (tWC): 5 ms

A write cycle time of 5 ms provides efficient data writing, making it suitable for applications with frequent data updates.

Memory Density: 65536 bit

High memory density optimizes space for data storage, enhancing the performance of embedded and electronic systems.

Memory IC Type: EEPROM

Being an EEPROM, it allows for non-volatile data storage, ensuring retention of information even when power is lost.

Maximum Standby Current: 0.00001 Amp

Extremely low standby current helps minimize power consumption, making it ideal for low-power applications.

Technical Specifications

EEPROM M24LR64E-RUW20/2 attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Additional Features:

1000000 ENDURANCE CYCLES

Alternate Memory Width:

8

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

40

JESD-30 Code:

R-XUUC-N

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

2

No. of Words:

2048 words

No. of Words Code:

2K

Operating Mode:

SYNCHRONOUS

Organization:

2KX32

Package Body Material:

UNSPECIFIED

Package Code:

DIE

Package Shape:

Package Style (Meter):

UNCASED CHIP

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Programming Voltage (V):

2.5

Screening Level:

AEC-Q100

Serial Bus Type:

I2C

Maximum Standby Current:

.00001 Amp

Maximum Supply Current:

.04 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.8 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

NO LEAD

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Maximum Write Cycle Time (tWC):

5 ms

Trade Compliance

M24LR64E-RUW20/2 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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