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LF147DT

STMicroelectronics

LF147DT by STMicroelectronics

LF147DT by STMicroelectronics is a versatile operational amplifier featuring a max input offset voltage of 13 mV, low bias current of 0.02 µA, and a nominal voltage of ±15 V. Ideal for military applications, it offers high precision with an 86 dB CMRR. Its compact design ensures efficient surface mounting in various electronic circuits.

Median Price

-

Lifecycle Status

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3

In-Stock Inventory

1k+

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Digiode

USA . 3,620 parts In-Stock

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3,620

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Anansix

USA . 2,396 parts In-Stock

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2,396

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Vyrian

USA . 1,876 parts In-Stock

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1,876

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IDEA Electronic Components Group

UK . 1,893 parts In-Stock

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$6.154

100+ parts

-

1k+ parts

$5.538

10k+ parts

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1,893

$6.154

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$5.538

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MKK Technologies

India . 1,782 parts In-Stock

1+ parts

$11.572

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1,782

$11.572

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DigiPath Technology Company

USA . 1,782 parts In-Stock

1+ parts

$11.572

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1,782

$11.572

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Corphita

USA . 2,305 parts In-Stock

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2,305

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Parana Technologies

USA . 450 parts In-Stock

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$7.358

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450

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$7.358

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Kepictronics

USA . 300 parts In-Stock

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300

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Overview

Unlock the potential of your designs with the LF147DT operational amplifier from STMicroelectronics, a leader in high-quality semiconductor solutions. Crafted with precision, this versatile device offers exceptional performance in diverse applications, from industrial automation to consumer electronics. Experience unparalleled reliability and low bias currents that enhance efficiency and reduce noise, ensuring your projects stand out with superior quality. Elevate your innovations with the LF147DT today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package material provides durability and resistance to environmental stress, making the product suitable for a variety of applications.

Maximum Input Offset Voltage: 13000 uV

With a maximum input offset voltage of 13 mV, this op-amp can be used in precision applications where accuracy is critical.

Maximum Average Bias Current (IIB): 0.02 uA

This low bias current ensures minimal drift over time, making it ideal for low-power and battery-operated devices.

Surface Mount: YES

Being a surface-mount device allows for easier integration into compact electronic designs and enhances manufacturing efficiency.

No. of Functions: 4

The availability of four functions in a single package increases design flexibility and can help reduce component count.

Package Shape: RECTANGULAR

The rectangular package shape provides an efficient footprint for circuit board layout, optimizing space utilization.

Nominal Common Mode Reject Ratio: 86 dB

An 86 dB common-mode rejection ratio enhances the amplifier's performance in noisy environments, ensuring reliable signal integrity.

Nominal Supply Voltage / Vsup (V): 15

A nominal supply voltage of 15 V enables compatibility with many standard circuits, simplifying design considerations.

Power Supplies (V): +-15

Dual power supply capabilities allow for a wider range of applications, including audio and instrumentation systems.

No. of Terminals: 14

With 14 terminals, this op-amp provides ample connection options for interfacing with various components and configurations.

Maximum Input Offset Current (IIO): 0.004 uA

The low input offset current contributes to enhanced precision in analog signal processing applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style helps in minimizing the space required on the PCB while maintaining robust performance.

Minimum Slew Rate: 12 V/us

A minimum slew rate of 12 V/us allows the amplifier to respond quickly to rapid changes in input signals, making it suitable for high-frequency applications.

Maximum Supply Voltage Limit: 18 V

The capability to handle supply voltages up to 18 V offers greater design flexibility for various operational scenarios.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, this op-amp is suitable for high-temperature environments in industrial and military applications.

Maximum Bias Current (IIB) @25 °C: 0.0002 uA

The ultra-low bias current at room temperature helps maintain long-term stability in precision analog circuits.

Frequency Compensation: YES

Built-in frequency compensation ensures stability across its bandwidth, vital for complex feedback configurations.

Minimum Voltage Gain: 25000

A minimum voltage gain of 25000 supports amplification of weak signals, essential for sensor applications.

Minimum Operating Temperature: -55 °C

The ability to operate at temperatures as low as -55 °C makes this op-amp reliable in extreme cold conditions.

Terminal Finish: NICKEL PALLADIUM GOLD

The terminal finish of nickel-palladium-gold provides enhanced corrosion resistance, ensuring reliability over time.

Terminal Position: DUAL

Dual terminal positioning facilitates easier routing on PCBs, making design and manufacturing processes more efficient.

Maximum Seated Height: 1.75 mm

A compact seated height of 1.75 mm contributes to lower profiles in device designs, beneficial for space-constrained applications.

Width: 3.9 mm

A narrow width of 3.9 mm allows for enhanced layout flexibility and the ability to fit into tighter circuits.

Length: 8.65 mm

The manageable length of 8.65 mm is conducive to designing multi-functional circuit boards without overcrowding.

Temperature Grade: MILITARY

Rated for military-grade use, this op-amp can withstand harsh conditions, making it suitable for defense applications.

Low-Bias: YES

Low-bias design enhances performance in precision instrumentation, making it suitable for sensitive measurements.

Maximum Negative Supply Voltage Limit: -18 V

The -18 V negative supply voltage limit provides versatility in signal processing applications where bipolar operation is required.

Nominal Unity Gain Bandwidth: 4000 kHz

A unity gain bandwidth of 4000 kHz indicates the op-amp's capability for high-speed applications, making it ideal for RF and audio.

Technology: BIPOLAR

Bipolar technology is known for fast response times and low noise, making this op-amp suitable for a variety of analog applications.

Terminal Form: GULL WING

The gull-wing terminal form provides excellent solder joint reliability and ease of placement during assembly.

Amplifier Type: OPERATIONAL AMPLIFIER

As an operational amplifier, this device can be used in a multitude of configurations, providing versatility for circuit designers.

Maximum Supply Current: 10.8 mA

The maximum supply current of 10.8 mA allows for operational flexibility while keeping power consumption within acceptable limits.

Nominal Negative Supply Voltage (Vsup): -15 V

A nominal negative supply voltage of -15 V enhances the op-amp's performance in bipolar signal applications.

Architecture: VOLTAGE-FEEDBACK

The voltage-feedback architecture is well-suited for many applications, offering high gain and versatility in signal amplification.

Packing Method: TAPE AND REEL

Tape and reel packing facilitates automated assembly processes, improving production efficiency and reducing handling damage.

Nominal Slow Rate: 16 V/us

A nominal slow rate of 16 V/us allows for stable signal processing in various applications, particularly in low-frequency systems.

Terminal Pitch: 1.27 mm

The terminal pitch of 1.27 mm is ideal for a variety of PCB designs, enhancing compatibility with existing layouts.

Technical Specifications

Operational Amplifiers (Op Amps) LF147DT attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

±15 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

4 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

86 dB

Input Offset Voltage Limit:

13000 uV

Minimum Voltage Gain:

25000

Minimum Slew Rate:

12 V/us

Nominal Slew Rate:

16 V/us

Maximum Input Offset Current (IIO):

4 nA

Peak Bias Current:

20 nA

Maximum Bias Current (IIB) @25 °C:

200 pA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

18 V

Maximum Negative Supply Voltage:

-15 V

Minimum Negative Supply Voltage:

-18 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

10.8 mA

Physical Characteristics

Length:

0.341 in (8.65 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP14,.25

Trade Compliance

LF147DT Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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