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LDP01-82AY

STMicroelectronics

LDP01-82AY by STMicroelectronics

LDP01-82AY by STMicroelectronics is a unidirectional transient voltage suppressor diode designed for robust protection in electronic circuits. It operates b/w -55 °C and 175 °C, with a breakdown voltage range of 77.8V to 86V. Ideal for automotive applications, it meets AEC-Q101 standards.

Median Price

$2.896

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,553 parts In-Stock

1+ parts

$2.822

100+ parts

-

1k+ parts

-

10k+ parts

-

3,553

$2.822

-

-

-

Vyrian

USA . 4,466 parts In-Stock

1+ parts

$2.970

100+ parts

-

1k+ parts

-

10k+ parts

-

4,466

$2.970

-

-

-

Anansix

USA . 745 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

745

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,172 parts In-Stock

1+ parts

$0.061

100+ parts

-

1k+ parts

$0.055

10k+ parts

-

1,172

$0.061

-

$0.055

-

MKK Technologies

India . 315 parts In-Stock

1+ parts

$0.114

100+ parts

-

1k+ parts

-

10k+ parts

-

315

$0.114

-

-

-

DigiPath Technology Company

USA . 315 parts In-Stock

1+ parts

$0.114

100+ parts

-

1k+ parts

-

10k+ parts

-

315

$0.114

-

-

-

Corphita

USA . 4,049 parts In-Stock

1+ parts

$2.673

100+ parts

-

1k+ parts

-

10k+ parts

-

4,049

$2.673

-

-

-

Component Stockers USA

USA . 1,962 parts In-Stock

1+ parts

$2.980

100+ parts

$2.190

1k+ parts

$1.410

10k+ parts

-

1,962

$2.980

$2.190

$1.410

-

Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Parana Technologies

USA . 24 parts In-Stock

1+ parts

-

100+ parts

$0.073

1k+ parts

-

10k+ parts

-

24

-

$0.073

-

-

Overview

Elevate your designs with the LDP01-82AY from STMicroelectronics, a robust transient suppression device that ensures optimal protection against voltage spikes. Renowned for its commitment to quality and reliability, STMicroelectronics delivers unmatched performance across diverse applications—from automotive to industrial systems. With superior thermal stability and compact packaging, this diode not only enhances safety but also boosts efficiency, providing exceptional value for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to environmental stressors, making this device suitable for various applications.

Config: SINGLE

A single configuration simplifies circuit design and reduces board space, enhancing ease of integration into electronic systems.

Surface Mount: YES

Surface mount design allows for automated assembly and reduces the size of PCB layouts, facilitating compact device designs.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space on the PCB, offering efficient layout options in electronic designs.

No. of Terminals: 2

Having only two terminals makes installation straightforward and minimizes the risk of connection errors.

Package Style (Meter): SMALL OUTLINE

The small outline package style enables higher density component placement, critical for modern, compact electronic devices.

Maximum Operating Temperature: 175 °C

Withstanding high temperatures ensures reliability in demanding environments, enhancing the product's longevity.

Minimum Operating Temperature: -55 °C

The capability to operate at very low temperatures expands the range of applications, especially in harsh environments.

Terminal Position: SINGLE

A single terminal position design facilitates easier alignment during assembly and reduces complexity.

Case Connection: CATHODE

Cathode connection ensures consistent performance in transient suppression, making it reliable for overvoltage protection.

Minimum Breakdown Voltage: 77.8 V

A minimum breakdown voltage ensures effective suppression of voltage transients, protecting sensitive components.

Maximum Breakdown Voltage: 86 V

A maximum breakdown voltage adds a safety margin, ensuring reliable operation under varying voltage conditions.

Reference Standard: AEC-Q101; IEC-61000-4-2

Compliance with industry standards ensures quality and reliability, making this component suitable for automotive and industrial applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

This diode type is specifically designed for protecting against voltage spikes, providing crucial safety for electronic circuits.

Technology: AVALANCHE

Avalanche technology enhances the speed of response to transients, crucial for protecting sensitive electronics.

Terminal Form: GULL WING

Gull wing terminals provide excellent mechanical stability and ease of soldering, ensuring robust connections on the PCB.

Maximum Repetitive Peak Reverse Voltage: 70 V

The ability to handle a peak reverse voltage of 70 V enhances the versatility of the device across different applications.

Moisture Sensitivity Level (MSL): 3

An MSL of 3 indicates moderate sensitivity to moisture, ensuring appropriate handling and storage without compromising reliability.

Polarity: UNIDIRECTIONAL

Unidirectional configuration simplifies circuit protection strategies by directing the voltage clamping in one direction.

Diode Element Material: SILICON

Silicon as the diode element material offers excellent performance characteristics and compatibility with various electronic components.

Technical Specifications

Transient Suppression Devices LDP01-82AY attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

86 V

Minimum Breakdown Voltage:

77.8 V

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PSSO-G2

Moisture Sensitivity Level (MSL):

3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Reference Standard:

AEC-Q101; IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

70 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Trade Compliance

LDP01-82AY Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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