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LDP01-42AY

STMicroelectronics

LDP01-42AY by STMicroelectronics

LDP01-42AY by STMicroelectronics is a unidirectional transient voltage suppressor diode, ideal for protecting sensitive electronics. It operates b/w -55 °C and 175 °C, with a breakdown voltage of 40V to 44.2V. This compact device features a gull-wing terminal design for easy surface mounting.

Median Price

$2.542

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,683 parts In-Stock

1+ parts

$3.700

100+ parts

$1.830

1k+ parts

$1.260

10k+ parts

$1.210

1,683

$3.700

$1.830

$1.260

$1.210

Avnet

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

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12,000

-

-

-

-

DigiKey

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.383

10k+ parts

$1.215

3,000

-

-

$1.383

$1.215

Element14

Singapore . 517 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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517

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 895 parts In-Stock

1+ parts

$1.349

100+ parts

-

1k+ parts

-

10k+ parts

-

895

$1.349

-

-

-

Vyrian

USA . 843 parts In-Stock

1+ parts

$1.420

100+ parts

-

1k+ parts

-

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-

843

$1.420

-

-

-

Anansix

USA . 690 parts In-Stock

1+ parts

-

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690

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 75 parts In-Stock

1+ parts

$0.058

100+ parts

-

1k+ parts

$0.052

10k+ parts

-

75

$0.058

-

$0.052

-

Advanced Electronics

New Zealand . 99 parts In-Stock

1+ parts

$0.093

100+ parts

$0.085

1k+ parts

$0.076

10k+ parts

-

99

$0.093

$0.085

$0.076

-

MKK Technologies

India . 1,445 parts In-Stock

1+ parts

$0.109

100+ parts

-

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10k+ parts

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1,445

$0.109

-

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DigiPath Technology Company

USA . 1,445 parts In-Stock

1+ parts

$0.109

100+ parts

-

1k+ parts

-

10k+ parts

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1,445

$0.109

-

-

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Corphita

USA . 737 parts In-Stock

1+ parts

$1.278

100+ parts

-

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737

$1.278

-

-

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iodParts Technologies Inc.

India . 2,180 parts In-Stock

1+ parts

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2,180

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

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2,000

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Parana Technologies

USA . 1,624 parts In-Stock

1+ parts

-

100+ parts

$0.069

1k+ parts

-

10k+ parts

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1,624

-

$0.069

-

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Overview

Experience unparalleled reliability with the LDP01-42AY from STMicroelectronics, a trusted leader in high-quality electronic components. This advanced transient suppression device excels in safeguarding sensitive electronics against voltage spikes, making it perfect for automotive and industrial applications. Its robust design ensures optimal performance across extreme temperatures, providing peace of mind and enhanced longevity for your devices. Elevate your projects with ST's innovative technology!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and protection against environmental factors, making the device reliable for long-term usage.

Config: SINGLE

The single configuration allows for a compact design, making it suitable for space-constrained applications.

Surface Mount: YES

Surface mount capability enables efficient manufacturing processes and helps save space on printed circuit boards (PCBs).

Package Shape: RECTANGULAR

The rectangular shape optimizes space utilization on PCBs and aligns well with standard component footprints.

No. of Terminals: 2

With only two terminals, this device simplifies circuit design and installation, enhancing overall efficiency.

Package Style (Meter): SMALL OUTLINE

The small outline package style reduces the footprint on the PCB, allowing for denser circuit designs.

Maximum Operating Temperature: 175 °C

A high maximum operating temperature makes this device suitable for applications in extreme conditions, ensuring reliability.

Minimum Operating Temperature: -55 °C

This wide temperature range allows for use in diverse environments, enhancing the device's versatility.

Terminal Position: SINGLE

Having a single terminal position simplifies circuit layout and reduces the risk of misalignment during assembly.

Case Connection: CATHODE

The cathode connection ensures consistent performance in transient voltage suppression applications.

Minimum Breakdown Voltage: 40 V

A minimum breakdown voltage of 40 V makes the device effective at protecting sensitive electronics from voltage spikes.

Maximum Breakdown Voltage: 44.2 V

This specification provides a safety margin that enhances device protection against transient surges.

Reference Standard: AEC-Q101; IEC-61000-4-2

Compliance with these standards assures users of the product's reliability and performance in automotive and EMC applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

As a transient voltage suppressor diode, it effectively protects circuits from voltage transients, increasing durability.

Technology: AVALANCHE

Avalanche technology provides rapid response times to voltage spikes, ensuring sensitive components remain protected.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and improve mechanical strength in surface mount applications.

Maximum Repetitive Peak Reverse Voltage: 36 V

A peak reverse voltage rating of 36 V makes this device suitable for numerous applications, enhancing its adaptability.

Moisture Sensitivity Level (MSL): 3

MSL level 3 indicates reasonable handling precautions, making the device suitable for typical PCB assembly processes.

Polarity: UNIDIRECTIONAL

Unidirectional characteristics are ideal for applications where voltage protection is needed in one direction, simplifying design.

Diode Element Material: SILICON

Silicon diode elements offer excellent thermal stability and performance, ensuring consistent functionality across applications.

Technical Specifications

Transient Suppression Devices LDP01-42AY attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

44.2 V

Minimum Breakdown Voltage:

40 V

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PSSO-G2

Moisture Sensitivity Level (MSL):

3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Reference Standard:

AEC-Q101; IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

36 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Trade Compliance

LDP01-42AY Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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