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L6385

STMicroelectronics

L6385 by STMicroelectronics

L6385 by STMicroelectronics is a MOSFET gate driver with 17V max supply voltage, 15V nominal voltage, and 0.65A output peak current limit. It is used in automotive applications for BCD technology, featuring a half bridge based interface IC type and high side driver functionality.

Median Price

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Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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Vyrian

USA . 4,550 parts In-Stock

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Extreme Components

USA . 596 parts In-Stock

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R&J Components

USA . 498 parts In-Stock

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498

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Anansix

USA . 307 parts In-Stock

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ComSIT Distribution GmbH

Germany . 200 parts In-Stock

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200

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Digiode

USA . 114 parts In-Stock

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114

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Fibra_Brandt Electronic GMBH

Germany . 10 parts In-Stock

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PAR Electronics

UK . 9 parts In-Stock

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AZTECH Wire

Italy . 1,143 parts In-Stock

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$11.850

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$11.850

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IDEA Electronic Components Group

UK . 480 parts In-Stock

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$13.318

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$11.986

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480

$13.318

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$11.986

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Microchip USA

USA . 226 parts In-Stock

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$15.131

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$15.131

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MKK Technologies

India . 1,679 parts In-Stock

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$25.043

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$25.043

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DigiPath Technology Company

USA . 1,679 parts In-Stock

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$25.043

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,691 parts In-Stock

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Perfect Parts

USA . 4,368 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,794 parts In-Stock

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Corphita

USA . 3,034 parts In-Stock

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Vigor

Singapore . 2,449 parts In-Stock

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Kepictronics

USA . 2,000 parts In-Stock

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Assy Fe

Spain . 1,038 parts In-Stock

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Parana Technologies

USA . 636 parts In-Stock

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$15.924

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636

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$15.924

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Overview

Unlock the power of efficient motor control with the L6385 by STMicroelectronics. This high-quality MOSFET gate driver offers reliability and precision in a compact package, making it ideal for automotive applications. With a maximum supply voltage of 17V and nominal output peak current limit of 0.65A, this innovative technology ensures optimal performance. Trust STMicroelectronics to deliver cutting-edge solutions that bring value and benefits to your projects. Elevate your designs with the L6385 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the components inside, ensuring long-lasting performance.

Maximum Supply Voltage: 17 V

Higher maximum supply voltage allows for versatility in different applications, providing flexibility in usage.

Power Supplies (V): 15

The power supply of 15V ensures reliable and stable operation of the MOSFET gate driver.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this MOSFET gate driver can withstand demanding environments.

Technology: BCD

BCD technology offers an efficient and reliable solution for driving MOSFETs, enhancing overall performance.

Nominal Output Peak Current Limit: 0.65 A

The nominal output peak current limit of 0.65A ensures safe and controlled operation of the MOSFET gate driver.

Turn-on Time: 0.11 us

The quick turn-on time of 0.11us allows for fast and efficient switching of the MOSFETs, improving overall performance.

Technical Specifications

MOSFET Gate Drivers L6385 attributes and parameters. Explore more MOSFET Gate Drivers devices from STMicroelectronics

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e3

Length:

10.92 mm

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Peak Current Limit:

.65 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

15

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

17 V

Nominal Supply Voltage:

15 V

Surface Mount:

NO

Technology:

BCD

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Turn-off Time:

.105 us

Turn-on Time:

.11 us

Width:

7.62 mm

Trade Compliance

L6385 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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