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L6384

STMicroelectronics

L6384 by STMicroelectronics

STMicroelectronics L6384 is a BCDMOS gate driver with 14.4V supply voltage, 0.25us turn-on time, and 0.3us turn-off time. It features a half bridge based MOSFET driver interface IC type and is suitable for high side driver applications in various industries.

Median Price

$1.685

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Freelance Electronics

USA . 72 parts In-Stock

1+ parts

$1.531

100+ parts

$1.607

1k+ parts

$1.515

10k+ parts

-

72

$1.531

$1.607

$1.515

-

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$1.839

100+ parts

-

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100

$1.839

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Vyrian

USA . 6,230 parts In-Stock

1+ parts

-

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6,230

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Digiode

USA . 3,783 parts In-Stock

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3,783

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ComSIT Distribution GmbH

Germany . 1,350 parts In-Stock

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1,350

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Anansix

USA . 1,061 parts In-Stock

1+ parts

-

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1,061

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LIBRA Elektronik GmbH

Germany . 1,047 parts In-Stock

1+ parts

-

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-

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1,047

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-

-

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Holdelec - ElecDif-Pro

France . 14 parts In-Stock

1+ parts

-

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14

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LittleDiode

UK . 3 parts In-Stock

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3

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Netroflash

USA . 500 parts In-Stock

1+ parts

$1.839

100+ parts

-

1k+ parts

-

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500

$1.839

-

-

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IDEA Electronic Components Group

UK . 2,202 parts In-Stock

1+ parts

$1.901

100+ parts

-

1k+ parts

$1.711

10k+ parts

-

2,202

$1.901

-

$1.711

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MKK Technologies

India . 1,105 parts In-Stock

1+ parts

$3.574

100+ parts

-

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1,105

$3.574

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DigiPath Technology Company

USA . 1,105 parts In-Stock

1+ parts

$3.574

100+ parts

-

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1,105

$3.574

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AZTECH Wire

Italy . 344 parts In-Stock

1+ parts

$6.284

100+ parts

-

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344

$6.284

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Ampacity Inc.

Singapore . 793 parts In-Stock

1+ parts

$27.500

100+ parts

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793

$27.500

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Microchip USA

USA . 337 parts In-Stock

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$193.187

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337

$193.187

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Assy Fe

Spain . 32,235 parts In-Stock

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32,235

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Lixinc

USA . 16,556 parts In-Stock

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Kepictronics

USA . 2,372 parts In-Stock

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2,372

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Parana Technologies

USA . 1,896 parts In-Stock

1+ parts

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100+ parts

$2.273

1k+ parts

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1,896

-

$2.273

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A-Z Elektronik GmbH

Germany . 1,800 parts In-Stock

1+ parts

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1,800

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Vigor

Singapore . 1,500 parts In-Stock

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1,500

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Alle Elektronik GmbH

Germany . 1,200 parts In-Stock

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1,200

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Corphita

USA . 658 parts In-Stock

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658

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Overview

Enhance the performance and reliability of your power management systems with the STMicroelectronics L6384 MOSFET Gate Driver. As a trusted industry leader, STMicroelectronics delivers top-quality products that guarantee seamless operation and longevity. The L6384 is ideal for a wide range of applications, offering unparalleled value and benefits to customers seeking efficient and precise control over their power electronics. Upgrade your systems today with the innovative technology of the L6384 from STMicroelectronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protects the internal components of the driver from external factors, ensuring reliability and longevity.

Package Shape: RECTANGULAR

Compact rectangular shape allows for efficient mounting and integration into various electronic circuits and systems.

Power Supplies (V): 14.4

Operates at a standard voltage level of 14.4V, making it compatible with common power sources and applications.

No. of Terminals: 8

Sufficient number of terminals for connecting to external components and devices, offering flexibility in circuit design.

Package Style (Meter): IN-LINE

In-line package style simplifies PCB layout and placement, optimizing space and facilitating assembly.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and conductivity, ensuring secure and reliable connections with other components.

Terminal Position: DUAL

Dual terminal position allows for easy and secure connection to external devices, minimizing the risk of loose connections or signal interference.

Maximum Seated Height: 5.08 mm

Low seated height facilitates compact and slim designs, ideal for space-constrained applications.

Width: 7.62 mm

Narrow width enables efficient board space utilization, perfect for systems with limited area for component placement.

High Side Driver: YES

Includes a high side driver function, essential for controlling power MOSFETs in high-side switching applications, enhancing overall system functionality.

Technology: BCDMOS

Utilizes BCDMOS technology, known for its high voltage handling capabilities and integration of bipolar, CMOS, and DMOS components, ensuring efficient performance.

Terminal Form: THROUGH-HOLE

Through-hole terminals are sturdy and reliable, suitable for applications where robust mechanical connections are required.

Nominal Supply Voltage: 14.4 V

Operates at a reliable nominal supply voltage of 14.4V, ensuring stable performance and compatibility with standard power sources.

Turn-on Time: 0.25 us

Fast turn-on time of 0.25 microseconds ensures quick and responsive switching, crucial for high-frequency applications requiring rapid operation.

Terminal Pitch: 2.54 mm

Standard terminal pitch of 2.54mm facilitates easy and precise soldering onto PCBs, simplifying assembly and maintenance processes.

Nominal Output Peak Current Limit: 0.65 A

Nominal output peak current limit of 0.65A ensures safe operation and protects the driver and connected components from excessive current flow.

Interface IC Type: HALF BRIDGE BASED MOSFET DRIVER

Half-bridge based MOSFET driver interface IC type offers efficient switching for half-bridge configurations, enhancing performance in power conversion applications.

Turn-off Time: 0.3 us

Fast turn-off time of 0.3 microseconds ensures quick and reliable switching off, essential for maintaining precision and efficiency in dynamic control systems.

Technical Specifications

MOSFET Gate Drivers L6384 attributes and parameters. Explore more MOSFET Gate Drivers devices from STMicroelectronics

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e3

No. of Functions:

1

No. of Terminals:

8

Nominal Output Peak Current Limit:

.65 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

14.4

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

MOSFET Drivers

Nominal Supply Voltage:

14.4 V

Surface Mount:

NO

Technology:

BCDMOS

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Turn-off Time:

.3 us

Turn-on Time:

.25 us

Width:

7.62 mm

Trade Compliance

L6384 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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