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ITA18B3RL

STMicroelectronics

ITA18B3RL by STMicroelectronics

ITA18B3RL by STMicroelectronics is a transient suppression device with 10 common cathode elements. It has a max non-repetitive peak reverse power dissipation of 300W and a max clamping voltage of 26V. Ideal for applications requiring bidirectional protection against voltage transients in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Lakeland Logistics Inc

USA . 16,000 parts In-Stock

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16,000

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Anansix

USA . 1,678 parts In-Stock

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1,678

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Vyrian

USA . 1,619 parts In-Stock

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Bristol Electronics

USA . 1,000 parts In-Stock

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1,000

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Digiode

USA . 773 parts In-Stock

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Pegasus Components GmbH

Germany . 328 parts In-Stock

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328

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IDEA Electronic Components Group

UK . 1,659 parts In-Stock

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$0.133

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$0.120

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1,659

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$0.120

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MKK Technologies

India . 1,967 parts In-Stock

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$0.251

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$0.251

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DigiPath Technology Company

USA . 1,967 parts In-Stock

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$0.251

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Kepictronics

USA . 6,890 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,177 parts In-Stock

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Corphita

USA . 4,443 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,451 parts In-Stock

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Parana Technologies

USA . 1,675 parts In-Stock

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$0.160

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$0.160

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Overview

Enhance the performance and reliability of your electronic devices with the ITA18B3RL by STMicroelectronics. Crafted with precision and expertise, this transient suppression device offers unmatched quality and durability. Ideal for a wide range of applications, this product provides superior protection against voltage spikes, ensuring the safety of your equipment. Experience peace of mind knowing that your electronics are safeguarded by this innovative solution. Upgrade to the ITA18B3RL today and enjoy seamless operation and extended longevity for your valuable devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Maximum Non Repetitive Peak Reverse Power Dissipation: 300 W

High power dissipation capability allows the device to handle sudden surges in voltage or current without being damaged, offering reliable transient suppression.

Maximum Reverse Current: 4 uA

Low reverse current ensures minimal leakage and energy loss, making the device more efficient in protecting against transient events.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diodes are specifically designed for transient suppression applications, offering superior performance in clamping voltage during surge events.

Technology: AVALANCHE

Avalanche technology allows for fast response times to transient events, providing effective protection for sensitive electronics in applications prone to voltage spikes.

Technical Specifications

Transient Suppression Devices ITA18B3RL attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Minimum Breakdown Voltage:

18 V

Maximum Clamping Voltage:

26 V

Config:

COMMON CATHODE, 10 ELEMENTS

Minimum Diode Capacitance:

500 pF

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G20

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

300 W

No. of Elements:

10

No. of Terminals:

20

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

BIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

15 V

Maximum Reverse Current:

4 uA

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

ITA18B3RL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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