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ITA18C1

STMicroelectronics

ITA18C1 by STMicroelectronics

ITA18C1 by STMicroelectronics is a bidirectional TRANS VOLTAGE SUPPRESSOR DIODE with 18V breakdown voltage and 28V clamping voltage. It features AVALANCHE technology, suitable for transient suppression in electronics. This small outline device has 8 terminals and operates up to 125 °C, making it ideal for surface mount applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,990 parts In-Stock

1+ parts

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2,990

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Vyrian

USA . 2,836 parts In-Stock

1+ parts

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2,836

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Anansix

USA . 2,012 parts In-Stock

1+ parts

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2,012

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,229 parts In-Stock

1+ parts

$0.020

100+ parts

-

1k+ parts

$0.018

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1,229

$0.020

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$0.018

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MKK Technologies

India . 649 parts In-Stock

1+ parts

$0.038

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649

$0.038

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DigiPath Technology Company

USA . 649 parts In-Stock

1+ parts

$0.038

100+ parts

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649

$0.038

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Corphita

USA . 3,373 parts In-Stock

1+ parts

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3,373

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Parana Technologies

USA . 458 parts In-Stock

1+ parts

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100+ parts

$0.024

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458

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$0.024

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Overview

Enhance your electronic systems with the ITA18C1 from STMicroelectronics, a leading manufacturer of high-quality transient suppression devices. Designed for complex applications, this small outline package offers dual terminal positions and bidirectional polarity, providing reliable protection against voltage spikes. With a maximum clamping voltage of 28V and advanced avalanche technology, this product ensures optimal performance in various scenarios. Trust STMicroelectronics to deliver top-notch solutions for your critical electronics needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the device, ensuring long-term reliability.

Config: COMPLEX

The complex configuration allows for advanced functionalities and enhanced performance in handling transient voltage spikes.

Surface Mount: YES

Being surface mountable, this device is easy to integrate into circuit boards, saving space and simplifying assembly processes.

Package Shape: RECTANGULAR

The rectangular package shape facilitates efficient placement and mounting on circuit boards, optimizing space utilization.

No. of Terminals: 8

Having 8 terminals allows for multiple connections and enables versatile applications in diverse circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style offers compactness and compatibility with small-scale electronic devices.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125 °C, this device can withstand elevated heat levels in various operating environments.

Terminal Position: DUAL

The dual terminal position enhances stability and connectivity, ensuring reliable performance under varying conditions.

Minimum Breakdown Voltage: 18 V

With a minimum breakdown voltage of 18V, this device effectively suppresses transient voltage spikes to prevent damage to sensitive components.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The trans voltage suppressor diode type is specifically designed for transient suppression applications, offering efficient protection against voltage surges.

Technology: AVALANCHE

The avalanche technology enables rapid response to overvoltage events, diverting excess energy away from the circuit to safeguard connected devices.

Terminal Form: GULL WING

The gull wing terminal form ensures secure soldering and robust connections, enhancing the device's overall performance and longevity.

No. of Elements: 6

With 6 elements, this device provides multiple channels for transient voltage suppression, increasing overall protection capabilities.

Maximum Repetitive Peak Reverse Voltage: 15 V

The maximum repetitive peak reverse voltage of 15V indicates the device's ability to handle repeated voltage spikes without compromising performance.

Polarity: BIDIRECTIONAL

Featuring bidirectional polarity, this device can suppress transient voltage spikes in both directions, offering comprehensive protection for connected circuits.

Maximum Clamping Voltage: 28 V

The maximum clamping voltage of 28V ensures that the device effectively limits peak voltage levels during transient events, preventing damage to downstream components.

Diode Element Material: SILICON

Utilizing silicon as the diode element material, this device offers high performance and reliability in transient suppression applications, ensuring consistent protection against voltage surges.

Technical Specifications

Transient Suppression Devices ITA18C1 attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Minimum Breakdown Voltage:

18 V

Maximum Clamping Voltage:

28 V

Config:

COMPLEX

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G8

No. of Elements:

6

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

BIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

15 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Trade Compliance

ITA18C1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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