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ITA10B3RL

STMicroelectronics

ITA10B3RL by STMicroelectronics

ITA10B3RL by STMicroelectronics is a transient suppression device with 10 common cathode elements. It has a max non-repetitive peak reverse power dissipation of 300W and max clamping voltage of 17V. Ideal for protecting electronic circuits from voltage spikes in applications requiring bidirectional protection at up to 125 °C operating temperature.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,839 parts In-Stock

1+ parts

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3,839

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Vyrian

USA . 3,496 parts In-Stock

1+ parts

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3,496

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Anansix

USA . 2,874 parts In-Stock

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2,874

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,068 parts In-Stock

1+ parts

$0.183

100+ parts

-

1k+ parts

$0.165

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2,068

$0.183

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$0.165

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MKK Technologies

India . 1,274 parts In-Stock

1+ parts

$0.344

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1,274

$0.344

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DigiPath Technology Company

USA . 1,274 parts In-Stock

1+ parts

$0.344

100+ parts

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1,274

$0.344

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Parana Technologies

USA . 756 parts In-Stock

1+ parts

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$0.219

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756

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$0.219

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Corphita

USA . 190 parts In-Stock

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190

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Overview

Experience the superior quality and reliability of the ITA10B3RL by STMicroelectronics, a leading manufacturer in the industry. As part of the Transient Suppression Devices category, this product offers unbeatable protection against voltage spikes and surges. With its common cathode configuration and 10 elements, it ensures maximum performance and durability. Ideal for a wide range of applications, this diode boasts a bidirectional polarity and a maximum clamping voltage of 17V, providing peace of mind to customers in need of efficient transient suppression solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the device.

Config: COMMON CATHODE, 10 ELEMENTS

Efficiently handles multiple transient voltage surges with a common reference point for easy integration into circuits.

Surface Mount: YES

Easy to install on printed circuit boards, saving time and effort during assembly.

Maximum Non Repetitive Peak Reverse Power Dissipation: 300 W

Can handle high transient power surges, providing effective protection for connected electronic components.

Maximum Reverse Current: 4 uA

Ensures minimal leakage current, enhancing the efficiency of the transient suppression device.

Package Shape: RECTANGULAR

Allows for compact and space-saving installation in electronic devices.

No. of Terminals: 20

Provides multiple connection points for easy integration into electronic circuits.

Package Style (Meter): SMALL OUTLINE

Ideal for applications where space is limited, such as in portable electronics.

Maximum Operating Temperature: 125 °C

Capable of withstanding high temperature environments, ensuring reliable performance under various conditions.

Terminal Position: DUAL

Offers flexibility in mounting and connection options for increased versatility.

Minimum Breakdown Voltage: 10 V

Provides effective protection against voltage spikes that could damage sensitive electronic components.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient voltage suppression, offering superior performance in safeguarding electronic circuits.

Technology: AVALANCHE

Utilizes avalanche breakdown for rapid response to voltage surges, protecting connected devices effectively.

Terminal Form: GULL WING

Facilitates easy soldering onto circuit boards for secure and reliable connections.

No. of Elements: 10

Provides multiple suppression elements for robust protection against transient voltage events.

Maximum Repetitive Peak Reverse Voltage: 8 V

Ensures continuous protection against lower voltage transient events in electronic circuits.

Polarity: BIDIRECTIONAL

Protects electronic devices from voltage spikes in both directions, offering comprehensive surge protection.

Minimum Diode Capacitance: 800 pF

Low capacitance helps maintain signal integrity in high-speed circuits, reducing the risk of distortion or interference.

Maximum Clamping Voltage: 17 V

Limits the voltage levels across connected devices to a safe threshold, preventing damage from transient voltage spikes.

Diode Element Material: SILICON

Utilizes silicon diode elements known for their reliability and efficiency in transient suppression applications.

Technical Specifications

Transient Suppression Devices ITA10B3RL attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Minimum Breakdown Voltage:

10 V

Maximum Clamping Voltage:

17 V

Config:

COMMON CATHODE, 10 ELEMENTS

Minimum Diode Capacitance:

800 pF

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G20

Maximum Non Repetitive Peak Reverse Power Dissipation:

300 W

No. of Elements:

10

No. of Terminals:

20

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

BIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

8 V

Maximum Reverse Current:

4 uA

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Trade Compliance

ITA10B3RL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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