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HSP051-2W3Y

STMicroelectronics

HSP051-2W3Y by STMicroelectronics

HSP051-2W3Y by STMicroelectronics is a unidirectional transient voltage suppressor diode designed for robust protection in automotive applications. It features a max reverse power dissipation of 20 W, operates b/w -40 °C to 150 °C, and has a breakdown voltage of 5.3 V. This compact surface mount device ensures reliable performance against electrical transients.

Median Price

$0.166

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

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$0.166

9,000

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-

$0.166

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,422 parts In-Stock

1+ parts

$0.100

100+ parts

-

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-

10k+ parts

-

3,422

$0.100

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-

-

Digiode

USA . 604 parts In-Stock

1+ parts

$0.200

100+ parts

-

1k+ parts

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604

$0.200

-

-

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TME

Poland . 9,000 parts In-Stock

1+ parts

-

100+ parts

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$0.121

9,000

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-

-

$0.121

Chip Stock

USA . 7,750 parts In-Stock

1+ parts

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7,750

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Anansix

USA . 2,825 parts In-Stock

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2,825

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,008 parts In-Stock

1+ parts

$0.035

100+ parts

-

1k+ parts

$0.031

10k+ parts

-

1,008

$0.035

-

$0.031

-

MKK Technologies

India . 1,427 parts In-Stock

1+ parts

$0.066

100+ parts

-

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10k+ parts

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1,427

$0.066

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DigiPath Technology Company

USA . 1,427 parts In-Stock

1+ parts

$0.066

100+ parts

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1,427

$0.066

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Corphita

USA . 922 parts In-Stock

1+ parts

$0.189

100+ parts

-

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922

$0.189

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Component Stockers USA

USA . 10,503 parts In-Stock

1+ parts

$0.470

100+ parts

$0.220

1k+ parts

$0.140

10k+ parts

-

10,503

$0.470

$0.220

$0.140

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

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10,000

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Perfect Parts

USA . 3,360 parts In-Stock

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3,360

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Parana Technologies

USA . 2,318 parts In-Stock

1+ parts

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100+ parts

$0.042

1k+ parts

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2,318

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$0.042

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Overview

Experience unmatched reliability with the HSP051-2W3Y from STMicroelectronics, a trusted leader in electronic components. Engineered for transient suppression, this device ensures your systems remain protected against voltage spikes, enhancing longevity and performance. With its compact design and robust specifications, it’s perfect for automotive and consumer applications where safety and efficiency are paramount. Choose STMicroelectronics for quality that empowers your innovations!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy construction ensures durability and resistance to environmental factors, making it reliable in various applications.

Config: COMMON ANODE, 2 ELEMENTS

The common anode configuration allows for easier integration in circuit designs, enhancing versatility.

Surface Mount: YES

Being a surface mount device (SMD) facilitates compact and efficient PCB layouts, essential for modern electronics.

Maximum Non Repetitive Peak Reverse Power Dissipation: 20 W

A high power dissipation rating ensures the device can handle transient events effectively, providing robust protection.

Package Shape: RECTANGULAR

The rectangular shape typically allows for easier layout on PCBs, optimizing space and enhancing thermal performance.

No. of Terminals: 3

Having three terminals makes installation straightforward while allowing for flexibility in circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style is ideal for space-constrained designs, making it suitable for a wide range of applications.

Maximum Operating Temperature: 150 °C

The high operating temperature limit ensures reliability and performance in high-temperature environments.

Minimum Operating Temperature: -40 °C

A low minimum operating temperature makes this device suitable for a variety of harsh environmental conditions.

Terminal Position: DUAL

Dual terminal positioning can facilitate easier layout design and better signal integrity.

Minimum Breakdown Voltage: 5.3 V

A minimum breakdown voltage of 5.3V provides effective voltage clamping for sensitive components.

Reference Standard: AEC-Q101; IEC-61000-4-2; ISO 10605

Compliance with these standards ensures high reliability and performance in automotive and industrial applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

As a transient voltage suppressor diode, it effectively protects circuits from voltage spikes, enhancing device longevity.

Technology: AVALANCHE

Avalanche technology allows for rapid response to transient events, providing better protection for sensitive electronics.

Terminal Form: GULL WING

Gull wing terminals are designed for optimal soldering performance, ensuring strong electrical connections.

No. of Elements: 2

Having two elements provides enhanced protection capabilities against transient overvoltages.

Maximum Repetitive Peak Reverse Voltage: 5 V

A low maximum repetitive voltage rating makes it suitable for use in low voltage applications, protecting sensitive components.

Polarity: UNIDIRECTIONAL

Unidirectional characteristics simplify circuit design by providing consistent voltage clamping in one direction.

Diode Element Material: SILICON

Silicon material enhances thermal stability and ensures reliable operation across a wide range of temperatures.

Technical Specifications

Transient Suppression Devices HSP051-2W3Y attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Additional Features:

ULTRA LOW CAPACITANCE

Minimum Breakdown Voltage:

5.3 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

20 W

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Reference Standard:

AEC-Q101; IEC-61000-4-2; ISO 10605

Maximum Repetitive Peak Reverse Voltage:

5 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Trade Compliance

HSP051-2W3Y Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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