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HSP061-2P6

STMicroelectronics

HSP061-2P6 by STMicroelectronics

HSP061-2P6 by STMicroelectronics is a unidirectional Trans Voltage Suppressor Diode with 6V breakdown voltage. It operates b/w -40 °C to 150°C, suitable for transient suppression applications. This single-config device comes in a small outline package with 6 terminals, making it ideal for surface mount designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,937 parts In-Stock

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9,937

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Digiode

USA . 3,012 parts In-Stock

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3,012

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Anansix

USA . 1,742 parts In-Stock

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1,742

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,779 parts In-Stock

1+ parts

$0.081

100+ parts

-

1k+ parts

$0.073

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1,779

$0.081

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$0.073

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MKK Technologies

India . 397 parts In-Stock

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$0.152

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397

$0.152

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DigiPath Technology Company

USA . 397 parts In-Stock

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$0.152

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397

$0.152

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Ampacity Inc.

Singapore . 436 parts In-Stock

1+ parts

$2.010

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436

$2.010

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AZTECH Wire

Italy . 204 parts In-Stock

1+ parts

$21.170

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204

$21.170

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RC Electronics

USA . 80,000 parts In-Stock

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Kepictronics

USA . 48,590 parts In-Stock

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Perfect Parts

USA . 3,771 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,816 parts In-Stock

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Corphita

USA . 1,942 parts In-Stock

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1,942

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Alle Elektronik GmbH

Germany . 1,877 parts In-Stock

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1,877

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Parana Technologies

USA . 1,742 parts In-Stock

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$0.097

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1,742

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$0.097

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Overview

Enhance your electronics with the HSP061-2P6 from STMicroelectronics, a leading manufacturer known for top-quality transient suppression devices. Ideal for protecting sensitive components from voltage spikes, this single-configured diode offers reliable performance in a small outline package. With a unidirectional polarity and a 6V breakdown voltage, this silicon diode is perfect for a wide range of applications. Trust STMicroelectronics to deliver exceptional products that provide value, benefits, and advantages to customers looking for quality solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the device lightweight and durable, making it easier to handle and install.

Config: SINGLE

The single configuration simplifies the installation process and reduces the chances of wiring errors.

Surface Mount: YES

Being surface mountable allows for easy integration onto PCBs, saving space and reducing assembly time.

Package Shape: RECTANGULAR

The rectangular shape provides a compact design, ideal for space-constrained applications.

No. of Terminals: 6

Having 6 terminals provides flexibility in wiring connections and allows for various circuit designs.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and facilitates a more organized layout.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures the device can withstand harsh environmental conditions without compromising performance.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows the device to function reliably even in extremely cold environments.

Terminal Position: DUAL

The dual terminal position offers redundant connections for increased reliability and stability in the circuit.

Minimum Breakdown Voltage: 6 V

The minimum breakdown voltage of 6V ensures effective protection against voltage spikes and surges, making the device suitable for a wide range of applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The Trans Voltage Suppressor (TVS) diode type provides superior surge protection capabilities, safeguarding sensitive electronics from voltage transients.

Technology: AVALANCHE

Avalanche technology offers fast response times to transient events, effectively clamping voltage spikes and protecting connected equipment.

Terminal Form: FLAT

The flat terminal form ensures secure connections and easy soldering onto the PCB for reliable performance.

Polarity: UNIDIRECTIONAL

The unidirectional polarity of the device allows for effective protection against voltage transients in one direction, ensuring proper circuit operation.

Diode Element Material: SILICON

The use of silicon as the diode element material offers high efficiency and reliability in suppressing transients, making the device a dependable choice for circuit protection.

Technical Specifications

Transient Suppression Devices HSP061-2P6 attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Additional Features:

ULTRA LOW CAPACITANCE

Minimum Breakdown Voltage:

6 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F6

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

UNIDIRECTIONAL

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

HSP061-2P6 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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