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HSP051-4N10

STMicroelectronics

HSP051-4N10 by STMicroelectronics

HSP051-4N10 by STMicroelectronics is a single transient suppression device with 5.8V breakdown voltage, 0.1uA reverse current, and 10V clamping voltage. It is used for protecting electronic circuits from ESD events in applications requiring avalanche technology and unidirectional polarity.

Median Price

$0.062

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 14,342 parts In-Stock

1+ parts

$0.280

100+ parts

$0.080

1k+ parts

$0.079

10k+ parts

$0.053

14,342

$0.280

$0.080

$0.079

$0.053

DigiKey

USA . 6,369 parts In-Stock

1+ parts

$0.390

100+ parts

$0.149

1k+ parts

$0.098

10k+ parts

$0.088

6,369

$0.390

$0.149

$0.098

$0.088

Arrow

USA . 21,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.052

21,000

-

-

-

$0.052

Verical

USA . 21,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.051

21,000

-

-

-

$0.051

Chip1Stop

Japan . 780 parts In-Stock

1+ parts

-

100+ parts

$0.062

1k+ parts

$0.055

10k+ parts

-

780

-

$0.062

$0.055

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,350 parts In-Stock

1+ parts

$0.039

100+ parts

-

1k+ parts

-

10k+ parts

-

2,350

$0.039

-

-

-

Digiode

USA . 3,958 parts In-Stock

1+ parts

$0.266

100+ parts

-

1k+ parts

-

10k+ parts

-

3,958

$0.266

-

-

-

TME

Poland . 21,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.056

21,000

-

-

-

$0.056

Anansix

USA . 2,707 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,707

-

-

-

-

Atlantic Semiconductor

USA . 200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

200

-

-

-

-

Bristol Electronics

USA . 137 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

137

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,836 parts In-Stock

1+ parts

$0.010

100+ parts

-

1k+ parts

$0.009

10k+ parts

-

1,836

$0.010

-

$0.009

-

MKK Technologies

India . 153 parts In-Stock

1+ parts

$0.019

100+ parts

-

1k+ parts

-

10k+ parts

-

153

$0.019

-

-

-

DigiPath Technology Company

USA . 153 parts In-Stock

1+ parts

$0.019

100+ parts

-

1k+ parts

-

10k+ parts

-

153

$0.019

-

-

-

Ampacity Inc.

Singapore . 17,521 parts In-Stock

1+ parts

$0.033

100+ parts

-

1k+ parts

-

10k+ parts

-

17,521

$0.033

-

-

-

Corphita

USA . 1,476 parts In-Stock

1+ parts

$0.252

100+ parts

-

1k+ parts

-

10k+ parts

-

1,476

$0.252

-

-

-

Component Stockers USA

USA . 66,181 parts In-Stock

1+ parts

$0.440

100+ parts

$0.300

1k+ parts

$0.190

10k+ parts

$0.150

66,181

$0.440

$0.300

$0.190

$0.150

Kepictronics

USA . 14,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

14,000

-

-

-

-

Futuretech Components

Singapore . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,000

-

-

-

-

A-Z Elektronik GmbH

Germany . 2,700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,700

-

-

-

-

Alle Elektronik GmbH

Germany . 1,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,800

-

-

-

-

Parana Technologies

USA . 391 parts In-Stock

1+ parts

-

100+ parts

$0.012

1k+ parts

-

10k+ parts

-

391

-

$0.012

-

-

Perfect Parts

USA . 336 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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336

-

-

-

-

Speed Components Ltd (Excess)

Israel . 314 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

314

-

-

-

-

Overview

Enhance your electronic systems with the HSP051-4N10 by STMicroelectronics, a top-tier manufacturer known for its quality products. As a Transient Suppression Device, this component offers reliable protection against voltage spikes, ensuring the longevity of your devices. From its single configuration to its advanced avalanche technology, this diode is designed to provide maximum clamping voltage at a nominal breakdown voltage of 5.8V. Trust in STMicroelectronics to deliver superior performance and peace of mind for your applications.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protects the device from external factors, making it suitable for various environmental conditions.

Config: SINGLE

Single configuration simplifies installation and reduces complexity in circuit design.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and cost.

Nominal Breakdown Voltage: 5.8 V

A higher nominal breakdown voltage ensures reliable protection against voltage spikes and surges.

Maximum Reverse Current: 0.1 uA

Low maximum reverse current minimizes power loss and enhances efficiency of the device.

Package Shape: RECTANGULAR

Rectangular package shape allows for compact and space-saving installation in electronic systems.

Reverse Test Voltage: 3.6 V

Low reverse test voltage provides effective protection against reverse polarity events.

No. of Terminals: 9

Nine terminals offer versatile connectivity options and compatibility with various circuit configurations.

Package Style (Meter): CHIP CARRIER

Chip carrier package style facilitates easy integration into existing circuit layouts and designs.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliable performance even in demanding thermal conditions.

Minimum Operating Temperature: -40 °C

Wide minimum operating temperature range enables operation in extreme cold environments without compromising functionality.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB layout and enhances connectivity in electronic systems.

Minimum Breakdown Voltage: 4.5 V

A higher minimum breakdown voltage ensures robust protection against voltage transients and surges.

Reference Standard: IEC61000-4-2

Compliance with IEC61000-4-2 standard ensures reliability and performance according to industry benchmarks.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diode type provides effective transient voltage suppression and protection for sensitive electronic components.

Technology: AVALANCHE

Avalanche technology offers high-energy transient suppression capabilities, making the device suitable for critical applications requiring robust protection.

Terminal Form: NO LEAD

No lead terminal form simplifies soldering and assembly processes, reducing installation time and effort.

Polarity: UNIDIRECTIONAL

Unidirectional polarity ensures consistent and reliable protection against voltage surges in a specific direction.

Maximum Clamping Voltage: 10 V

Maximum clamping voltage limits voltage spikes to a safe level, protecting downstream components from damage.

Diode Element Material: SILICON

Silicon diode element material offers high-performance transient suppression characteristics and long-term reliability.

Technical Specifications

Transient Suppression Devices HSP051-4N10 attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Additional Features:

ULTRA LOW CAPACITANCE

Minimum Breakdown Voltage:

4.5 V

Nominal Breakdown Voltage:

5.8 V

Maximum Clamping Voltage:

10 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N9

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

9

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Polarity:

UNIDIRECTIONAL

Reference Standard:

IEC61000-4-2

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

3.6 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Trade Compliance

HSP051-4N10 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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