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BYT30PI-400RG

STMicroelectronics

BYT30PI-400RG by STMicroelectronics

BYT30PI-400RG from STMicroelectronics is a fast recovery rectifier diode with a max reverse voltage of 400 V and output current of 30 A. It features a compact flange mount design, operating b/w -40 °C to 150 °C. Ideal for high-efficiency power applications.

Median Price

$8.736

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 10 parts In-Stock

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$8.736

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10

$8.736

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Digiode

USA . 4,891 parts In-Stock

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4,891

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Vyrian

USA . 4,269 parts In-Stock

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4,269

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Anansix

USA . 316 parts In-Stock

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316

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Lakeland Logistics Inc

USA . 50 parts In-Stock

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50

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 780 parts In-Stock

1+ parts

$0.154

100+ parts

-

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$0.138

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780

$0.154

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$0.138

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MKK Technologies

India . 759 parts In-Stock

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$0.289

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759

$0.289

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DigiPath Technology Company

USA . 759 parts In-Stock

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$0.289

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759

$0.289

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AZTECH Wire

Italy . 840 parts In-Stock

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$12.450

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840

$12.450

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Corphita

USA . 3,620 parts In-Stock

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3,620

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Parana Technologies

USA . 1,700 parts In-Stock

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$0.184

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1,700

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$0.184

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Northwest PG Solutions

USA . 1,592 parts In-Stock

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1,592

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Native Components

USA . 478 parts In-Stock

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478

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Overview

Elevate your projects with the BYT30PI-400RG rectifier diode from STMicroelectronics, a leader in innovative semiconductor solutions. Designed for fast recovery applications, this robust diode ensures reliable performance under extreme temperatures and heavy workloads. With its precision engineering and durable packaging, it delivers outstanding efficiency and longevity, providing exceptional value for your designs. Trust STMicroelectronics to power your success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures lightweight construction and reliable performance in various applications.

Config: SINGLE

Single configuration simplifies design and integration into electronic circuits.

Maximum Reverse Recovery Time: 0.1 us

A fast reverse recovery time enhances the efficiency of switching applications, making it ideal for high-speed operations.

Maximum Reverse Current: 35 uA

Low reverse current signifies minimal leakage, ensuring improved energy efficiency and performance.

Package Shape: RECTANGULAR

The rectangular shape provides a convenient layout for circuit boards, facilitating easier design and assembly.

No. of Terminals: 2

A two-terminal design simplifies connections and reduces the complexity of circuit layouts.

Package Style (Meter): FLANGE MOUNT

Flange mount style ensures secure installation, providing stability and reliability in performance.

Application: FAST RECOVERY

Designed for fast recovery applications, this diode is perfect for circuits requiring quick response times.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for use in demanding environments without performance degradation.

Minimum Operating Temperature: -40 °C

Wide temperature range enables reliable operation in extreme conditions, enhancing versatility.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance, ensuring long-lasting connections.

Terminal Position: SINGLE

Single terminal position allows for straightforward integration into a variety of circuit designs.

Case Connection: ISOLATED

Isolated case connection improves safety by reducing the risk of short circuits and enhancing operational reliability.

Maximum Power Dissipation: 50 W

High power dissipation capability allows for efficient handling of power loads in various applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is optimized for converting AC to DC, making it essential for power supply circuits.

Maximum Forward Voltage (VF): 1.5 V

Low forward voltage drop contributes to higher efficiency and less heat generation during operation.

Maximum Output Current: 30 A

A high output current rating makes this diode suitable for high-power applications, enhancing its range of use.

Terminal Form: THROUGH-HOLE

Through-hole design allows for strong mechanical attachment and reliable electrical contact in PCB applications.

Maximum Repetitive Peak Reverse Voltage: 400 V

High voltage stability makes it suitable for use in circuits exposed to significant reverse voltage conditions.

Maximum Non-Repetitive Peak Forward Current: 350 A

The capability to handle extremely high current in non-repetitive peaks increases adaptability in transient conditions.

Diode Element Material: SILICON

Silicon-based diodes enable robust performance with good thermal stability and reliability across a wide range of applications.

Technical Specifications

Diodes & Rectifiers BYT30PI-400RG attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

FAST RECOVERY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.5 V

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

350 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

50 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Current:

35 uA

Maximum Reverse Recovery Time:

.1 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BYT30PI-400RG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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