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BYT30-300

STMicroelectronics

BYT30-300 by STMicroelectronics

BYT30-300 by STMicroelectronics is a fast recovery rectifier diode with 300V peak reverse voltage, 30A output current, and 0.1us reverse recovery time. It is designed for high power applications requiring quick response times and low reverse current leakage. The diode's metal package body material and round shape make it suitable for post/stud mount installations in various electronic systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,706 parts In-Stock

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4,706

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Vyrian

USA . 3,973 parts In-Stock

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3,973

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Anansix

USA . 72 parts In-Stock

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72

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ECAB

Sweden . 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 888 parts In-Stock

1+ parts

$0.146

100+ parts

-

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$0.132

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888

$0.146

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$0.132

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MKK Technologies

India . 382 parts In-Stock

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$0.275

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382

$0.275

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DigiPath Technology Company

USA . 382 parts In-Stock

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$0.275

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382

$0.275

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Corphita

USA . 4,322 parts In-Stock

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4,322

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Northwest PG Solutions

USA . 1,780 parts In-Stock

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1,780

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Parana Technologies

USA . 1,042 parts In-Stock

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$0.175

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1,042

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$0.175

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Native Components

USA . 40 parts In-Stock

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40

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Overview

Upgrade your electronic projects with the high-quality BYT30-300 diode by STMicroelectronics. Known for their reliable and innovative solutions, STMicroelectronics delivers top-notch products to meet your needs. The BYT30-300 is a fast recovery rectifier diode that offers a maximum output current of 30A and a maximum repetitive peak reverse voltage of 300V. Whether you're working on power supplies, inverters, or battery chargers, this diode provides excellent performance and efficiency. Trust STMicroelectronics to bring you cutting-edge technology for all your electronic applications.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides excellent heat dissipation and mechanical strength, ensuring reliable performance in various operating conditions.

Config: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in different applications.

Maximum Reverse Recovery Time: 0.1 us

Fast reverse recovery time ensures efficient switching operation and reduces power loss in high-speed applications.

Maximum Reverse Current: 35 uA

Low reverse current minimizes leakage and improves overall efficiency of the rectifier diode.

Package Shape: ROUND

Round package shape allows for easy mounting and installation in various electronic devices.

Package Style (Meter): POST/STUD MOUNT

Post/stud mount style provides secure electrical connections and simplifies installation in power electronics systems.

Application: FAST RECOVERY

Designed for fast recovery applications where high switching speeds are required, ensuring responsive performance.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for reliable operation in harsh environments and temperature variations.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature enables the diode to function in cold environments without loss of performance.

Terminal Position: UPPER

Upper terminal position facilitates easy connection and wiring in electronic circuits and systems.

Case Connection: CATHODE

Cathode case connection simplifies polarity identification and aids in correct installation of the diode in circuits.

Maximum Power Dissipation: 50 W

High power dissipation rating allows the diode to handle large power loads and maintain stable operation under high current conditions.

Diode Type: RECTIFIER DIODE

Rectifier diode type specifically designed for rectifying alternating current (AC) to direct current (DC) with low forward voltage drop.

Maximum Forward Voltage (VF): 1.5 V

Low forward voltage drop minimizes power loss and heat generation, improving energy efficiency in electronic circuits.

Maximum Output Current: 30 A

High output current rating allows the diode to handle large current flows without overheating, suitable for high-power applications.

Terminal Form: SOLDER LUG

Solder lug terminals provide secure electrical connections and easy soldering for reliable circuit integration.

Maximum Repetitive Peak Reverse Voltage: 300 V

High reverse voltage rating ensures the diode can withstand reverse voltage spikes and surges without failure.

Maximum Non Repetitive Peak Forward Current: 500 A

Ability to handle high peak forward currents makes the diode suitable for pulse or surge current applications without damage.

Diode Element Material: SILICON

Silicon diode element material provides high reliability, low forward voltage, and fast recovery times for optimal performance in various applications.

Technical Specifications

Diodes & Rectifiers BYT30-300 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

FAST RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.5 V

JESD-30 Code:

O-MUPM-D1

Maximum Non Repetitive Peak Forward Current:

500 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

30 A

Package Body Material:

METAL

Package Shape:

Package Style (Meter):

POST/STUD MOUNT

Maximum Power Dissipation:

50 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

300 V

Maximum Reverse Current:

35 uA

Maximum Reverse Recovery Time:

.1 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

BYT30-300 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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