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BYT30-800

STMicroelectronics

BYT30-800 by STMicroelectronics

BYT30-800 by STMicroelectronics is a single rectifier diode with a max output current of 30A and max repetitive peak reverse voltage of 800V. It has a fast recovery time of 0.13us, making it suitable for applications requiring high-speed switching such as in power supplies or inverters. The diode's package style is post/stud mount with a round shape and metal body material.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,283 parts In-Stock

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4,283

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Digiode

USA . 3,491 parts In-Stock

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3,491

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Anansix

USA . 871 parts In-Stock

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871

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Halfin

Belgium . 50 parts In-Stock

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50

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ECAB

Sweden . 27 parts In-Stock

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27

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,352 parts In-Stock

1+ parts

$0.163

100+ parts

-

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$0.147

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2,352

$0.163

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$0.147

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MKK Technologies

India . 1,078 parts In-Stock

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$0.306

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1,078

$0.306

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DigiPath Technology Company

USA . 1,078 parts In-Stock

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$0.306

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1,078

$0.306

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Corphita

USA . 2,372 parts In-Stock

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2,372

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Parana Technologies

USA . 1,963 parts In-Stock

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$0.195

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1,963

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$0.195

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Northwest PG Solutions

USA . 1,909 parts In-Stock

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1,909

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Native Components

USA . 270 parts In-Stock

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270

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Overview

Discover the power and efficiency of the STMicroelectronics BYT30-800 diode rectifier. With a reputation for top-quality manufacturing, STMicroelectronics delivers a reliable product that is perfect for fast recovery applications. Offering a maximum output current of 30A and a maximum repetitive peak reverse voltage of 800V, this diode will exceed your expectations in performance and durability. Whether you're working on industrial equipment, automotive systems, or renewable energy projects, the BYT30-800 provides the value and benefits you need to succeed. Upgrade to STMicroelectronics for superior results.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides high thermal conductivity and excellent heat dissipation, ensuring the diode operates efficiently at high temperatures.

Maximum Reverse Recovery Time: 0.13 us

The fast reverse recovery time of 0.13 us allows for quick switch-off, making this diode suitable for high-frequency applications.

Maximum Reverse Current: 100 uA

Low reverse current of 100 uA ensures minimal power loss and improves overall efficiency of the diode.

Application: FAST RECOVERY

Designed for fast recovery applications, ensuring reliable and efficient operation in high-speed circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this diode can withstand elevated temperatures without performance degradation.

Maximum Power Dissipation: 62 W

With a high maximum power dissipation of 62 W, this diode can handle high power loads effectively.

Maximum Forward Voltage (VF): 1.9 V

Low forward voltage drop of 1.9 V minimizes power loss and improves efficiency in forward conduction.

Maximum Output Current: 30 A

High maximum output current of 30 A allows for handling heavy loads and high current applications.

Maximum Repetitive Peak Reverse Voltage: 800 V

With a high maximum reverse voltage rating of 800 V, this diode is suitable for high voltage applications.

Maximum Non Repetitive Peak Forward Current: 200 A

Capable of handling high non-repetitive peak forward currents up to 200 A, making it suitable for surge protection.

Technical Specifications

Diodes & Rectifiers BYT30-800 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

FAST RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.9 V

JESD-30 Code:

O-MUPM-D1

Maximum Non Repetitive Peak Forward Current:

200 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

30 A

Package Body Material:

METAL

Package Shape:

Package Style (Meter):

POST/STUD MOUNT

Maximum Power Dissipation:

62 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

800 V

Maximum Reverse Current:

100 uA

Maximum Reverse Recovery Time:

.13 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

BYT30-800 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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